BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1611
FEATURES
z High voltage V
z Excellent H
FE
=-50V.
CEO
Linearity.
Pb
Lead-free
z High DC current gain : h
z Complementary to 2SC4177.
=200 typ.
FE
APPLICATIONS
z Audio frequency general purpose amplifier applications. SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
2SA1611 M4/M5/M6/M7 SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
-60 V
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-50 V
-5 V
-100 mA
150 mW
-55~150 ℃
Document number: BL/SSSTF033 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1611
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CLASSIFICANTION OF h
FE
(BR)CBO IC
V
CBO
EBO
FE
T
IC=-1mA,IB=0 -50 V
(BR)CEO
IE=-100μA,IC=0 -5 V
(BR)EBO
CE(sat)
ob
=-100μA,IE=0 -60 V
VCB=-60V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-6V,IC=-1mA 90 200 600
IC=-100mA, IB=-10mA -0.18 -0.3 V
VCE=-6V, IC= -10mA 180 MHz
VCB=-10V,IE=0,f=1MHz 4.5 pF
Range 90-180 135-270 200-400 300-600
marking M4 M5 M6 M7
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF033 www.galaxycn.com
Rev.A 2
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