BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1577
FEATURES
z Power dissipation.(PC=200mW)
z Excellent H
Linearity.
FE
APPLICATIONS
z General purpose application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
2SA1577 HP/HQ/HR SOT-323
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-40 V
-32 V
-5 V
-500 mA
200 mW
-55~150 ℃
Document number: BL/SSSTF030 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor 2SA1577
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CLASSIFICANTION OF h
FE
(BR)CBO IC
V
CBO
EBO
FE
T
IC=-1mA,IB=0 -32 V
(BR)CEO
IE=-100μA,IC=0 -5 V
(BR)EBO
CE(sat)
ob
=-100μA,IE=0 -40 V
VCB=-20V,IE=0 -1 μA
VEB=-4V,IC=0 -1 μA
VCE=-3V,IC=-10mA 82 390
IC=-100mA, IB=-10mA -0.4 V
VCE=-5V, IC= -20mA
f=100MHz
VCB=-10V,IE=0,f=1MHz 7 pF
200 MHz
Rank P Q R
Range 82-180 120-270 180-390
marking HP HQ HR
Document number: BL/SSSTF030 www.galaxycn.com
Rev.A 2
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