BL Galaxy Electrical Production specification
Silicon Planar Epitaxial Transistor 2SA1213
FEATURES
Pb
z Low saturation voltage
z High speed switching time
z Small flat package
z P
z Complementary to 2SC2873
=1.0 to 2.0W(mounted on ceramic substrate)
C
ORDERING INFORMATION
Type No. Marking Package Code
2SA1213 NO/NY SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
SOT-89
V
CBO
V
CEO
V
EBO
I
C
IB
P
C
Tj,T
stg
Note1:Mounted on ceramic substrate(250mm2*0.8t)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction and Storage Temperature
-50 V
-50 V
-5 V
-2 A
-0.4 A
500
mW
1000(Note)
-55~150 ℃
Document number: BL/SSSTG040 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Planar Epitaxial Transistor 2SA1213
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
IC=-10mA,IB=0 -50 V
VCB=-50V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-2V,IC=-0.5A 70 240
=-2V,IC=-2.0A 20
V
CE
IC=-1A,IB=-0.05A
=-1A,IB=-0.05A
I
C
VCE=-2V, IC=-0.5A
VCB=-10V,IE=0,f=1MHz
-0.5 V
-0.5 -1.2 V
120 MHz
40 pF
TYP MAX UNIT
CLASSIFICATION OF hFE
Rank O Y
Range 70-140 120-240
Marking NO NY
Document number: BL/SSSTG040 www.galaxycn.com
Rev.A 2
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