BL Galaxy Electrical Production specification
Plastic-Encapsulate Transistors 2SA1201
FEATURES
Pb
z High voltage
z High transition frequency
z Small flatpackage
z P
z Complementary to 2SC2881
=1 to 2 W(mounted on a ceamic substrate)
C
ORDERING INFORMATION
Type No. Marking Package Code
2SA1201 DO••/DY• SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
Lead-free
SOT-89
V
CBO
V
CEO
V
EBO
I
C
IB
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction and Storage Temperature
-120 V
-120 V
-5 V
-800 mA
-160 mA
500 mW
-55~150 ℃
Document number: BL/SSSTG037 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Plastic-Encapsulate Transistors 2SA1201
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
C
IC=-10mA,IB=0 -120 V
(BR)CEO
IE=-1mA,IC=0 -5
(BR)EBO
CE(sat)
BE
ob
=-1mA,IE=0 -120 V
VCB=-120V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-5V,IC=-100mA 80 240
IC=-500mA,IB=-50mA
=-5V,IC=-500mA
V
CE
VCE=-5V, IE=-100mA
VCB=-10V,IE=0,f=1MHz
-1 V
-1
120 MHz
30 pF
TYP MAX UNIT
V
CLASSIFICATION OF hFE
Rank P Q
Range 80-160 120-240
Marking
DO• DY•
Document number: BL/SSSTG037 www.galaxycn.com
Rev.A 2
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