BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1179
FEATURES
z High forward current transfer ratio hFE
which has satisfactory linearity.
z High speed switching.
z Complementary to 2SD1749.
APPLICATIONS
z For power application and switching. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA1179 M SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-55 V
-50 V
-5 V
-150 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC093 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1179
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
V
f
T
C
IC=-1mA,IB=0 -50 V
(BR)CEO
IE=-10μA,IC=0 -5
(BR)EBO
CE(sat)
BE(sat)
ob
=-10μA,IE=0 -55 V
VCB=-35V,IE=0 -0.1 μA
VEB=-4V,IC=0 -0.1 μA
VCE=-6V,IC=-1mA 200 400
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-6V, IC=-10mA
VCB=-6V,IE=0,f=1MHz
-0.5 V
-1.0 V
180 MHz
4 pF
TYP MAX UNIT
V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC093 www.galaxycn.com
Rev.A 2
Loading...