BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1162
FEATURES
z Low noise:NF=1dB(Typ),10dB(Max).
z Commplementary to 2SC2712.
z Small package.
APPLICATIONS
z General purpose application. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA1162 SO/SY/SG SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-50 V
-50 V
-5 V
-150 mA
150 mW
-55~125 ℃
Document number: BL/SSSTC0092 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1162
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
C
NF
IC=-1mA,IB=0 -50 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
CE(sat)
ob
=-100μA,IE=0 -50 V
VCB=-50V,IE=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-6V,IC=-2mA 70 400
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V,IE=0,f=1MHz
-0.1 -0.3 V
80 MHz
4 7 pF
VCE=-6V,IC=0.1mA,
f=1MHz,R
=10kΩ
g
1.0 10 dB
TYP MAX UNIT
V
CLASSIFICATION OF h
FE(1)
Rank O Y G
Range 70-140 120-240 200-400
Document number: BL/SSSTC0092 www.galaxycn.com
Rev.A 2
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