BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1037
FEATURES
z Low I
z Low V
C.ICMAX.
=-150mA.
Ideal for low-voltage operation.
CE(sat).
APPLICATIONS
z Ideal for low-voltage operation.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA1037 FQ,FR,FS SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-60 V
-50 V
-6 V
-150 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC013 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1037
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
IC=-1mA,IB=0 -50 V
(BR)CEO
IE=-50μA,IC=0 -6
(BR)EBO
CE(sat)
=-50μA,IE=0 -60 V
VCB=-60V,IE=0 -0.1 μA
VEB=-6V,IC=0 -0.1 μA
VCE=-6V,IC=-1mA 120 560
IC=-50mA, IB=-5mA
-0.5 V
VCE=-12V, IC=-2mA
f=30MHz
140 MHz
TYP MAX UNIT
V
Collector output capacitance
CLASSIFICATION OF h
Rank Q R S
Range 120-270 180-390 270-560
Marking FQ FR FS
FE(1)
C
ob
VCB=-12V,IE=0,f=1MHz
4.0 5.0 pF
Document number: BL/SSSTC013 www.galaxycn.com
Rev.A 2
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