BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1036
FEATURES
z Large I
z Low V
C.ICMAX.
CE(sat).
=-500mA.
Ideal for low-voltage operation.
APPLICATIONS
z Ideal for low-voltage operation.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA1036 HP,HQ,HR SOT-23
Pb
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-40 V
-32 V
-5 V
-500 mA
200 mW
-55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC012 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1036
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V
(BR)CBO IC
V
I
CBO
I
EBO
h
FE
V
f
T
IC=-1mA,IB=0 -32 V
(BR)CEO
IE=-100μA,IC=0 -5
(BR)EBO
CE(sat)
=-100μA,IE=0 -40 V
VCB=-20V,IE=0 -1 μA
VEB=-4V,IC=0 -1 μA
VCE=-3V,IC=-10mA 82 390
IC=-100mA, IB=-10mA
-0.4 V
VCE=-5V, IC=-20mA
f=100MHz
200 MHz
TYP MAX UNIT
V
Collector output capacitance
CLASSIFICATION OF h
Rank P Q R
Range 82-180 120-270 180-390
FE(1)
C
ob
VCB=-10V,IE=0,f=1MHz
7 pF
Document number: BL/SSSTC012 www.galaxycn.com
Rev.A 2
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