BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1015
FEATURES
Pb
z Complementary To 2SC1815.
z Excellent H
z High total power dissipation.
z Collector current up to 150mA.
z Collector-Emitter voltage BV
Linearity.
FE
CEO
=-50V.
APPLICATIONS
z Low frequency , low noise amplifier. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
2SA1015 BA SOT-23
Lead-free
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj,T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-50 V
-50 V
-5 V
-150 mA
200 mW
-55~150 ℃
Document number: BL/SSSTC011 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SA1015
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
(BR)CBO IC
V
I
CBO
I
CEO
I
EBO
h
FE
V
V
IC=-0.1mA,IB=0 -50 V
(BR)CEO
IE=-10μA,IC=0 -5
(BR)EBO
CE(sat)
BE(sat)
=-100μA,IE=0 -50 V
VCB=-50V,IE=0 -0.1 μA
VCE=-50V,IB=0 -0.1 μA
VEB=-5V,IC=0 -0.1 μA
VCE=-6V,IC=-2mA 130 400
IC=-100 mA, IB=- 10mA
=-100 mA, IB= -10mA
I
C
-0.3 V
-1.1 V
TYP MAX UNIT
V
Transition frequency
CLASSIFICATION OF h
Rank L H
Range 130-200 200-400
FE(1)
VCE=-10V, IC= -1mA
f
T
f=30MHz
80 MHz
Document number: BL/SSSTC011 www.galaxycn.com
Rev.A 2
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