BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor 2PD601AW
FEATURES
z Collector Current.(IC= 100mA）
z Excellent H
Linearity.
FE
Pb
Lead-free
z Power dissipation.(P
=200mW)
C
APPLICATIONS
z General purpose application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
2PD601AW 6D/6E/6F SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
V
CBO
CEO
Collector-Base Voltage
Collector-Emitter Voltage
60 V
50 V
V
EBO
I
C
P
C
Tj,T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
6 V
100 mA
200 mW
-55~150 ℃
Document number: BL/SSSTF028 www.galaxycn.com
Rev.A 1
BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor 2PD601AW
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
DC current gain h
(BR)CBO IC
V
(BR)CEO
(BR)EBO
CBO
EBO
FE
@ Ta=25℃ unless otherwise specified
=100μA,IE=0 60 V
IC=1mA,IB=0 50 V
IE=100μA,IC=0 6 V
VCB=60V,IE=0 0.01 μA
VEB=5V,IC=0 0.01 μA
VCE=10V,IC=2mA
2PD601AQW
2PD601ARW
2PD601ASW
VCE=2V,IC=100mA 90
160
210
290
260
340
460
Collector-emitter saturation voltage V
Transition frequency f
CE(sat)
T
IC=100mA, IB= 10mA 0.5 V
VCE=6V, IC= 2mA
f=100MHz 2PD601AQW
2PD601ARW
2PD601ASW
100
120
140
MHz
Document number: BL/SSSTF028 www.galaxycn.com
Rev.A 2
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