The B&K-hecision
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technique
circuitry.
user to identify
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the frequency at
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to test
and a low-current
An exceptional
Model 530 Semiconductor
out-of-circuit semiconductor
and
for
nraking
transistors
the
ternrinals
out-of-circuit
feature is
which
transistor
additional tests on
presence
the
in
drive systern which enables the
of the
checks.
provision
for rleasurement
gain
is one or unity.
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testing,
devices
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device in
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pulse
most
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devices.
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gm,
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instrument is
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control
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manipulation,
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measurements
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designed
facilitating
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of transistor
high-power
devices
for a minimum
at
rapid
pulse
rated
testing
to
bipolar
and
beta
technique
current,
amount
of most
up
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SPECIAL
l. Patented
successful
low shunt irnpedances
device under test.
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device
nraking it unnecessary to
identification. Can be
additional tests
position.
3.
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operated when
transistor are identified
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4.
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5. A-udible tone tells when the device under
good
testins
linrited-energy
use of in-circuit testing
tested in all
being
can be
gate
or
-
lead
identified by color as Test Switch is
testing
polarity
devices
no need to take eyes
hard-to-set-at devices.
and
pulse
circuit
with
complete safety for the
switch
indication to identify
N-channel
sequentially
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know
left
GOOD
in
made without
with HI
when
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FET's.
or
off
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connects
configurations
the device terminal
position
memorizing
drive. All leads
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circuit
for
board
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test is
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n.
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channel).
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transistors.
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good
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lead
polarity
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all breakdown
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or bad
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of
good
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transistors,
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diodes
leads
devices
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leakage
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SUMMARY
or SCR's,
FET's
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of transistors.
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or
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parameters
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AND
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100
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depletion
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v.
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fr of
0-500
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whether
new
test
types.
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gate
leakage
transistors
of
current
bipolar
MHz,0-1500
device
FET's, both
power
FET's.
of
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and
of diodes.
transistors,
MHz.
transistor,
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ranges:
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check
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tab
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transistors
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8.
configurations
following comparisons
The APPENDIX
9.
schematic symbols
the
530. This
device
10.
extensive list
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parameters
signal
transparent
bands,
color
diodes
fne
either
FET's
prior
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germanium or silicon.
in
similar
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provided
is
hollow
glass
or type
are
be
types,
packages
TO-3
to
bipolar
:
instruction
this
to
for
should be
of semiconductor
the APPENDIX
in
usually
diodes
can
cases
numbers
painted
protected
such as
Transistor
Collector
Base
Emitter
devices
recognized
be
with
either
printed
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USING
MODEL 530
THE
I
{
IN-CIRCIIT
Make
TESTING
sure
being tested,
charged.
A. Transistors
1. Set the DRIVE
2. Connect the
the three leads of the device
test leads must
color Test kad Sockets
Move
3.
positions
glows.
Switch
whether the device is
P
channel.
good
will do so in only
"THINGS
(see
this
Test Switch
transistor
Identification
good
positions
IBad Identification Window
the
cally all
BASE
4. If
there is
lamps
moved througlr its six
the device under test
Device
a.
(-uy
b. Device with
Device
c.
"SPECIFICATIONS").
FET
d.
5. Re-test the
transistors
most
adjacent Test
BASE
Window.
then be identified.
If
6.
the device tests
4(d)
above
If
the device
7.
position,
circuit
cedures.
SCR'S:
B.
the DRIVE switch
Set
1.
CAI.]"fION
all
power
is turned
off
in the
circuit
and that all capacitors are dis-
FET's:
and
Switch
three
be
(5)
test
leads
plugged
to the LO
you
into their
position.
(in
any manner) to
wish to test. The
respective
(6).
the Test
Switch
until one of the two red
A tone also will be
(8)
is ON. The lamp that
In LO
TO KNOW
(4)
NPN
drive,
most transistors
one
ABOUT
position,
through
slowly
lamps
(1)
heard if SPEAKER
glows
(l)
or PNP
indicates
(2)
that test
Test
Switch
THE 530").
all the leads of the
can be identified as shown in the I-ead
(LO
or
having
junction
color indicated is
Window
good
no
glows)
as
with high
not function
(3).
HI
drive)
the
FET's
indication
Most FET's
in
same BASE
are
gate
the
(neither
the Test Switch
positions,
of
is one
the
leakage
properly
two
Test Switch
color shown in
will test
(3),
since
symmetrical. The
Iead of the
of the two
(a)
is slowly
in LO drive, then
following:
or very low
in
circuit).
open/shorted elements.
with excessive
that
will
device,
that test
Switch
shown
color
Only the
be true.
could
does not
HI
in
drive,
not test with
using HI
base
good
circuit shunting
LO drive.
drive. In
good
positions
in the kad
lead of the
using HI
test
lemove
drive, then 4(a) or
good
in any Test Switch
the
HI
will do
so in
having the same
Identification
transistor
from the
device
and re-test using OUT-OF-CIRCUIT
(5)
to the
position.
HI
its six
(2),
or
or N oi
position
In
practi-
FET.
gain
(see
drive,
/wo
can
pro-
2. Connect
the tfuee
3. Move
the three
leads of the
the Test Switch
positions until the
position and
position
the
4.
The SCR
b. One
are
a. One
haying
Identification
Lead
is
obtained:
NPN.
PNP,
good
NOTE: indications
IDENTIFICATION:
LEAD
a. The BASE color
Window
tion
NPN lamp
BASE color
Window
tion
(2)
PNP
the SCR
the
circuit
lamp
tests
5.
b. The
If
from
to excessive shunting
procedures.
circuit
Diodes:
C.
l. Set
LEAKAGE
2. Set Test Switch
identification).
3. Set
4. Connect
NPN/PNP Switch
the
to
diode
be
tested.
blue
5. Adjust the LEAKAGE
approximately
panel.
trol
6.
7.
Depress
while
Switch
(Green
While
the
keeping
(a)
to each
identification.)
base
performing
LEAKAGE/GAIN
approximately
be
will
Test Switch
Switch
Test
the shunting
on
position
ihe diode
having
cation
full-scale
heavily
example,
-or
relay
should
re-tested
(
will
giving
under
the collector
Window
readings
shunted
transient
a
solenoid
a
be disconnected
using
(in
leads
test
you
(4)
wish to
slowly
SCR
NPN lamp
PNP lamp
a different
(2)
BASE
Window
following indications
the
if
only
is
the
same BASE
in the
gate
must
not have
shown
(3)
(1) glows.
in the
shown
cathode lead when
is the
glows.
should be
bad, then
and
it
tested again
in-circuit),
VOLTS control
(a)
to top
(12)
yellow
and
(14)
position
to PNP.
test leads across
VOLTS Control
l0 volts, as
indicated on
PUSH-TO-TEST
this switch
while
)
give
the highest
test
(3).
by
depressed,
of
step
Meter
upper
the
6, observe
(19).
full scale
other
the
a lower
effect of
the circuitry.
reading,
is connected
(C)
color
If
both
the diode
low-resistance
The
for one
reading, depending
in the
is either
suppressor
In this case
coil.
from
OUT-OF-CIRCUIT
any manner)
test.
through
(l)
glows
glows
in
as shown in
color
(3).
color.
ldentifica'
kad
when
lead
ldentifica'
kad
removed
(muy
be
using
to zero.
(Green
the
Switch
(13)
rotate
two
results
the
the
positions.
meter
position of
position of
cuthode of
the
test lead
to the
positions
Lead
Identifi'
produce
shorted
circuitry;
across
diode
the diode
the circuit
procedures.
to
its six
in one
another
the
the
subjebt
out'of-
base
the
(1a)
to
con'
and,
lest
on
reading
the
In the
or
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and
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II
j
(19).
meter
fr Tests:
3.
Measurement
transistors
A detailed
provided in the appendix
of the
is
complex
explanation
parameters of bipolar
fr
theory and
in
of
of this manual.
performance.
fr measurements
position
uppermost
position
Switch
cation
Connections
provided
is
Socket
indicated
required,
for
position
for
positions
[rad
in
can
the device
or
(7).
The
an
by
"NC"
is
have
ldentification
be
"X".
entered.
I and
Both
2.
the
made
can
required
Where no connection
the adjacent
of
green
base
Window
the
to
inserted
be
connections
these
identifi-
test
into
Test
(3).
leads
Test
are
is
When
measuring
some transistors.
with
may occur
and the G500
is
always
numerical
the 0-500 rimge
To obtain reliable
a.
frequency characteristics
under test, the
of the device
previous
the
Insert
b.
appropriate
transistor leads must
socket
be made
the three-lead
connections
additional
the accuracy
three-lead adapter
absolutely necessary.
the fr
Set
c.
1500 range
0meter
If the reading
d.
the transistor
of
fr, it is
on two
the range
value
lead designations.
(18)
ranges, such
MHz ranges.
reading
(in
this
applies).
lead identification
must
tests.
the transistor under
test socket
fr
to fit into
adapter
the
to
lead length
of
RANGE
and read
the
on
greater
is
under
important to
the same meter deflection
The fr of the transistor
that
example,
information
known
be
properly
If
the socket
provided to
transistor.
can be detrimental
this test; therefore,
should be
MHz Switch
the
MHz
1500
than 300, this is the
test.
know that,
as the 0-100
gives
the highest
the reading on
regarding
of the
(15)
the device
transistor
polarity
and
as determined
into the
test
(16).
or
match
cannot
provided,
make
Note that any
used only
(17)
to the
value on the fr
scale.
MHz
the
The
the
use
the
to
the
in
i
NUMBER
LEAD COLOR
TEST
(3)
Yellow
Device
Tests
BVCES,
BVCEO,
ICpS
ICEO
BVCBO,tCgO
BVCpS
4.
With Base
a.
b.
c.
IgCS
Ip,CO
Ig,gO
BVECS,
BVECO,
BVEBO,
if
fr
Emitter
X
X
NC
X
X
X
(Collector-Emitter
Shorted
Connect
into the
Make
position.
Move the
which
dicated by
transistor
test socket
the DRIVE
sure
Test Switch
produces a
the
AND
(2)
Green
Base
X
NC
X
X
NC
X
to Emitter):
to the
(7).
switch
good
polarity
lights
(l)
Blue
Collector
X
X
X
X
X
NC
Breakdown
test leads or
(5)
is in the
(4)
to the
indication,
(l)
or
(2).
Test
Switch
Position
I
I
I
2
2
2
Voltage
plug
LO
position
in-
as
it
1
!
I
{
I
l
e. If the observed
the RANGE,
and observe
range
reading
transistor
If
f .
the observed
RANGE,
and observe
the transistor
of
readings
If
E.
All
eliminate the
identification
when the device lead
the following
required for
positions
there
ranges
absolute
NOTE
voltage and
of
MHz
greater than
is
under
MHz
meter
below 5 on
is a difference
the scales
where
value for
ON
BREAKDOWN
breakdown
need to
when
beginning
table
the
device
Test Switch
less than 300, set
reading
test.
reading
switch
under
VOLTAGE AND
identification
indicates
is
switch
(18).
fr is the
know
(4)
(17)
the
meter
50,
this
is less than
(17)
to the
This
test. The accuracy
range is
this
in readings
overlap,
most accurate.
TESTS
tests outlined here
the device lead
test.
the
the connections
tests. The indicated
correspond
to the 0'500
(18).
If
the
is the fr of
0-100 range
is the fr reading
questionable.
the
In
is known,
to the
the
50, set the
of
on two
largest
cases
good-bad
If the
good
rn a
of
identified
test
to about
and move
positions which
the lowest
GAIN
transistor
d. Set
e. Set
indication
Test Switch
by observations
as follows:
o
Set the
10 volts.
o
Depress
the Test
r
Test Switch
The
indicated
(19)
Meter
leads can
the NPN/PM
corresponding
which lights.
the LEAKAGE
zero.
NOTE
paragraph
of
test
in two adjacent
(4),
the collector
LEAKAGE
PUSH-TO-TEST
the
gave a
is
VOLTS
Switch
be identified.
(4)
good
(4)
position
current
position in.which
the
Switch
to the
"A-1"
results
positions
can
during
indication.
VOLTS Control
the leakage
Control
Switch
between
LEAKAGE/
on
(12)
polarity
the
which
to
light
(14)
(13)
two
gives
the
(1)
be
all
position
(2)
or
(l
to
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Depress
d.
set the LEAKAGE VOLTS
specified
PUSH-TO-TEST
the
test voltage.
button
control
(13)
(14)
and
to the
e.
Disconnect the voltmeter, if used, after the
test
voltage has been
age
current
measurement will
set; otherwise the
in error.
be
leak-
Disconnect
test voltage
age current
With'the
f.
pressed,
indicated on
This
test.
10. BVB3O
With
Collector
a.
Set the LEAKAGE VOLTS
zeto,
Set the
b.
adjacent
paragraph
indication
Disconnect
c.
connecting
bending the
transistor
emitter
Depress
d.
adjust the
until a
current is
meter
device
measured accurately
impedance voltmeter
emitter
not leave the
voltage is
the voltmeter, if used, after the
been set; otherwise the leak-
has
measurement
PUSH-TO-TEST
observe
LEAKAGE/GAIN meter
1699
is the
(Reverse
Emitter-Base
Open):
Test Switch
to that
"2"
which
in kad Identification
the
collector lead, either
the test lead if
collector lead and
in Test Socket
and base leads are
the PUSH-TO-TEST
LEAKAGE VOLTS
increase
sharp
observed on LEAKAGE/GAIN
(19).
This is
under test. This voltage
terminals of the
voltmeter
adjusted.
will
the leakage
value of the device
Breakdown
(4)
used for the BV6'ps
has the
so
(7)
connected.
or
the BVegO voltage
by
connecting a
across the
device under test.
connected after the
in error.
be
button
sudden change in
(13)
de-
current
Control
to
the
sarne*Firr
Window
connected, or by
inserting the
so that
switch
Control
as
(19).
under
Voltage
(la)
to
position
test of
color
(3).
by
dis-
the
only
(13)
and
(14)
of the
can be
high-
base and
Do
With
pressed,
dicated
is
the
12. BVBCO
Volfage With
a. Set
zeto.
Set the Test Switch
b.
adjacent to
paiagfaph
indication in I-ead Identification Window
Disconnect the
c.
necting the test lead if so
bending the base
sistor in Test Socket
emitter and
Depress the
adjust the LEAKAGE VOLTS
until
current is observed on LEAKAGE/GAIN
meter
device under test. This voltage
measured accurately
impedance
emitter terminals of the
not
voltage
I3CO
13.
Base
Open):
PUSH-TO-TEST
the
observe
LEAKAGE/GAIN meter
on
IpgO
value of
(Reverse
Base Open):
LEAKAGE VOLTS
the
that
"2"
which has the same-Fise
collector
PUSH-TO-TEST
a sharp
(19).
leave the
is adjusted.
(Reverse
increase or
This is the BVECO voltage
voltmeter across the
voltmeter
Emitter-Collector
the leakage current as
the
button
device under
Emitter-Collector
(13)
(19).
test.
Breakdown
Control
(4)
to the
used for the BV6'pg test
lead, either
base
lead
connected, or by
and inserting the tran-
(7)
so that
leads are
switch
sudden change in
by connecting a
device
connected
position
by discon-
only
connected.
(13)
control
can be
collector and
under test. Do
after
Current
de-
This
(14)
color
and
(14)
of
high-
With
in-
to
of
(3).
the
the
the
l4
(Reverse
IBgg
11.
tor
Open):
This
current
voltage.
follows:
a. Leave
in the
The transistor
b.
the
If
c.
required, the
AGE VOLTS
exact test
impedance voltmeter
base
d. Depress the
set the
specified
Emitter-Base
is
a specified limit at a
If
these values are known,
Test Switch
previous
previous
only an approximate voltage indication
terminals
LEAKAGE VOLTS
test.
connections
test.
panel
control
voltage is desired, connect a high-
of the device
PUSH-TO-TEST
test voltage.
Current With Collec-
specified test
proceed
(4)
in
the
calibration of the LEAK-
(14)
to the emitter and
position
test
are the
can
under test.
control
same as in
be used.
button
(14)
(13)
to the
used
If the
as
is
and
This
current is a specified limit
voltage. If
follows:
Leave
a.
in
The
b.
the
If
required,
AGE VOLTS
exact test
impedance
collector terminals
Turn the
GAIN
proceed
(19) does not
<iff,
panel
bottom
Plug
zero
driver
trimpot
With power
(10)
BETA/FET
BETA"
should read zero
bottom
Model
(19)
meter
Screwdriver
and adjust it to
Model
530
(19)
meter
to step
unplug the
by
panel
in the unit
control trimpot R-87
so that
location.
"LO
to
(4)
H.lf
indicate
unit
removing
and
meter is at zero.
on, set the HI PWR/LO
PWR" position.
Bm
position.
panel
of
TERMINAL
Calibration
power
530
does not
in the hole
power
indicates zero
the LEAKAGE/GAIN
and remove
the
two on
and turn
switch
LEAKAGE/GAIN
on top scale;
the 530
off.
indicate zero,
indicate zrjro
on, if
zero,
turn the 530 power
the 530
five screws
panel).
back
power
with
Refer to Fig. 8
Turn
(9)
to
and adjust zero
STRIPTRANSFORMER
If
LEAKAGE/
just
the LEAKAGE/
on.
suitable screw-
"TRANSISTOR
if not, remove
insert a
below the
on top
on top
TRANSISTOR
scale.
scale,
meter
bbttom
(three
Adjust the
PWR
switch
meter
p
on
for
(19)
CAL
trimpot R-106
holding
(9)
in
the LEAKAGE/GAIN
top
scale. Refer
B.
Leakage
l. LEAKAGE/GAN
2. Plug
3.
4.
5.
Circuitry
calibrated
the Model
power
on.
Set
Test switch
NPN/PNP
Connect a 5.1
milliamp
sockets
connected
meter).
Press
Model
adjust front panel
so that
with
the
TRANSISTOR
"TRANSISTOR
Calibration
per
as
switch
meter, to the
(6)
of the 530.
to
the
530 PUSH-TO-TEST
the
external
suitable screwdriver
to Fig. 8
KO resistor
meter
meter
section
530
into
(a)
to the
(12)
to
positive
LEAKAGE
meter reads
SPEAKER
(while
BETA/FET gm
BETA" position)
(19)
for trimpot
(19)
"A"
power
top-most
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blue
(Blue
lead
reads
should
above.
source
in series
yellow
an
socket
of the
switch
VOLTS
0.9
milliamp
switch
so that
zero
location.
be zero
and turn
position.
with a DC
test
should
external
(13)
control
Set
lead
and
(14)
DC.
on
I
be
MAIN P. C.
26
BOARD
FRONT PANEL
Fig.
8.
Bottom
view
of Model
TEST
SCREW
530, with
bottom
#1
panel
removed.
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Hi I Meter
Scale
Fig.
"TRANSISTOR
pot
R-92 with
AGE/GAIN
value
CAL"
of the LEAKAGE/GAIN
p
11.
Hi
calibration
BETA"
position,
suitable screwdriver
(19)
meter
(found
reads
step 6) on
in
meter
chart.
and adjust trim-
so that LEAK-
the recorded
the
"HI
p"
(19).
Pulse
Height
in
Volts
"HI
scale
p
{V}
Fig.
(d)
Adjust R-22
milliamperes
(e)
Remove
sistor
with
lead
be
between 9
operation.
NPN
12.
Field
NPN
into front
current
(See
Fig.
PNP
Socket
B
calibration,
for
a
(See
Fig.
Transistor
panel
meter in
l3).
Current
1l
and
Socket
fr
circuit.
collector
8
current of l0
for
location of R-22).
and insert PNP
socket
labeled PNP
series with
measured
milliamperes
the
for
Tran-
(15)
collector
should
proper
E.
fr
Circuit Calibration
1.
Tum Model
meter
screwdriver
adjust
2. Remove
the
two on
3.
Turn Model
plugged
meter
on the RANGE,
(18)
zero
4.
Calibration
Equipment
(a)
(b)
(c)
(18)
does
in
530
it to
indicate zero
the Model
five
screws
the
back
530 power
into fr
(18)
reading
does
not read
reading
(Fig.
of
Automatic
Required:
.
o
good
4ny
hecision
Any known
sistors.
Tum Model
Insert NPN
sistor
socket
Place
current
(See
lead.
Fig.
off.
If fr
not indicate zero,
530
just
below
on
the
bottom
on the
the hole
(three
panel).
on. Without
sockets
MHz
(15)
of zero
Switch
zero,
or
for
(17).
adjust
8).
Bias
Circuit.
quality
Model
530
Transistor
labeled
meter in
digital Voltmeter (B
2S0).
good
NPN
power
on.
into front panel
(16).
NPN
series with
12.)
OUT-OF-CIRCUIT
insert
a suitable
the
meter
top
scale.
panel
bottom
any
(16),
each
range
If
R-55
by
check
the fr
to obtain
and
removing
panel
and
transistors
for
fr
selected
meter
& K-
and PNP
Tran-
tran-
the
collector
Fig.
13.
Field
calibration,
5.
Calibration
a
oscillators.
Equipment
.
of I MHz, l0
Required:
Frequency
Counter
at frequency up
Precision
.
Any
Model 1801).
NPN
transistor with an fr
fr
circuit.
MHz,
and 30 MHz
-
100
mV sensitivity
to 30 MHz
(B
of
K-
&
greater
than 500 MHz.
.
Non-metalliccoil-adjustingtool.
(a)
Tum
Model
(b)
Insert
NPJrl
labeled
ments
location
NPN
are
of
TP-4
530 power
transistor
(16).
taken
at
and
on.
into
front panel
All
frequency
TP-4.
oscillator
measure-
See Fig.
coils.
socket
8
for
28
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front
edge
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the transformer.
board with
in the vertical position
components.
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previous
Removal
(u)
On the
and
RANGE
(b)
Turn
the
panel
of the
the
front
the front
the
steps for removal.
of fr P.C.
control panel,
remove
the Model
control
up,
MHz
panel
the
switch
main
so that
Next,
main
board
mounting
530 over
face
break
any wires,
P.C.
board
the
rotate
edge
up with
for
full
P.C.
board, reverse
for
service.
pull
to remove
(17).
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down
and
back
edge
the
main P.C.
the
access to
nut from
it lies with
and the
raise
the
slide it
clears
board
all
the
the knob
the
bottom
NOTES
(.)
Remove
three
screws
screws
panel.
(d)
Remove
(identified
fr P.C.
board
o
Two
o
Two
(e)
Lift the
suitable position
ponents.
(f)
To
replace
previous
the
bottom panel
in
the
in
the
back
the four P.C.
with
located
screws
screws
fr
board out
the fr P.C.
steps for removal.
bottom panel
panel
board
an asterick
as follows:
near
back
near front
for
access
by removing
nearest
panel.
panel.
and
board,
mounting
in Fig.
rotate
to
service
reverse
the
8)
and-
bottom
screws
fiom
it to
com-
the
two
the
a
the
30
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FIELD-EFFECT
-
common
Bm
drain
current to
mode.
channel.
current
A
layer, or
by the type of
P-channel
depletion-mode
transistor
zero
current.
depletion-type
sistor having
gate-source
increased
applied
drain
from
enhancement-mode
effect
from
drain
enhancement-type
transistor
for
be
appropriate
field-effect
is due
conduction
from
terminals.
gaie
which
effective.
insulated-gate
having
insulated from
junction
effect
form
metal-oxide-semiconductor
sistor. An insulated-gate
the
channel
N-channel
that has
A
flow
channel
to
a finite value
gate-source
(D,
the
transistor
zero
current.
gate-source
zero
increased
entirely
a
(G,'g).
'the
one
fiunction-gate)
transistor
P-N
insulating
is
an N-type
TRANSISTORS
source
gate-to-source
region
may
bulk material.
or
such that
or
d).
channel.
to a finite
having
polarity.
transistor.
channel
voltage
The electrode
electric
or
junction(s)
oxide
field-effect
of
is influenced
physically
majority
N-channel.
operation.
changing the
field-effect
appreciable
voltage;
decreased
voltage.
region
A
operation.
such that
field-effect
substantially
voltage;
by the
application of
A transistor
to the
controlled
applied
field due
field-effect
gate
more
the
channel.
that uses one
with
layer
between each
material.
transistor. A
conduction
transfer
semiconductor
The
decreases
the
according
into which
value
flow
transistor.
electrodes
field-effect
the
field-effect
conductance.
voltage
by
a transverse
be an inversion
type of
carriers
operation
The
the"magnitude
transistor.
channel
channel
The
changing the
increases
transistor.
zero
the
channel
of
majority
by an electric field
between
associated
to the
or
channel.
(MOS)
channel.
in
material
channel
during
gate-source
A field-effect
conductivity for
conductivity
to the
majority
operation
gate-source
the magnitude
channel
gate-source
a
in which
the
with
control voltage
field-effe
A
which
transistor. A field-
more
field-effect
transistor
gate
electrode
field-effect
Ratio of
common
electrical
layer,
is determined
conduction;i.e.,
of
a field-effect
voltage
of
polarity
carriers flow
of
field-effect
A
conductivity
conductivity
the
conduition
carriers through
gate
and source
the region
ct transistor
electrically
are
gate
regions
AC
source
in which
field.
a diffused
from
the drain
tran-
zero
may
of
the
field-
a
voltage
of
t[e
may
voltage of
arising
that
tran-
which
in
and the
transistor
be
a
in
is
substrate
insulated-gate
material
which
substrate
ing
the
electrodes.
tetrode
having
active
of other
this definition.
triode field-effect
a
Ip
terminal.
IOSS
into the drain
zero.
an
15
terminal.
ICSS reverse
source. The direct
junction-gate
is reverse-biased
the drain terminal
nal.
15
terminal.
VBGSS
voltage
drain
Note:
glte
VBGSSp'
having
V-BCSSp
breakdown
with
terminal
V-BCSSn
breakdown
with
terminal
(U,
u) of
that
contains
may
be connected to
-
of
material that
insulating
gate,
-
drain current,
This is an
off-state
-
gate
-
source
field-effect
a
a
a thin-film field-effect
field-effect
two independent
substrate terminated
elements
a
source, and a drain.
zerc-gate-voltage
current in
current,
field-effect transistor when
current,
-
gtesource
between
terminal
symbol
Jh9
should
shunting
-
forward
voltage
forward gate-source
short-circuited
reverse gate-source
voltage
reverse
short-circuited
vcsR.
VDD,
VG_G,
source.
connected
VSS
The DC
to
the reference
junction
a
field-effect
a channel, a
a terminal.
supports the
layer,
and
transistor. A
gates,
is
considered a
transistor. A
DC. The
terminal when
on-state
short-circuited
diodes or
gate-source
drain current. The direct
current
enhancement-type
an
DC. The
gate
current,
curient
with respect
is short-circuited
The direct
DC.
breakdown
gate
the
VB65g
transistors.
be used with
supply voltage
and
is
similar voltage-limiting
gate-source
between
voltage
to
the
between
voltage
to the
DC
supply
terminal.
field-effect
transistor.
thin semiconductor
the
source,
a source,
externally
gate
field-effect
direct
the
in a depletion-type
direct
drain short-circuited
into the
to the
voltage. The breakdown
source
to
primarily
The
insulated-gate
breakdown
gate
the
source
breakdown
gate
the
voltage
transistor or
A semiconductor
source, and a drain
transistor. An insulat-
gate,
field-effect
and a
and independently
for
the
transistor having
current into
gate-source
device.
current into
gate
terminal of
gate
the
source terminal
to the
source
current into the
terminals
the
source
used
symbols
applied
applied
source
applied
with
VBCSSR
and
terminal.
and
voltage.
source
and the
voltage.
source terminals
and
terminal.
for
drain,
to
and
layer,
drain
and
transistor
drain.
An
purpose
the
drain
current
voltage
device,
gate
the
terminal
and
termi-
source
with
the
terminal.
junction-
tiansistors
devices.
The
terminals
drain
V65p.
See
The
the
drain
See
gate,
a ciicuit
an
of
is
to
a
or
P-channel
that has a P-type
source
into the
32
field-effect
(S,
r). A
channel.
transistor. A
conduction
region
from
field-effect
channel.
which
majority
transistor
carriers
flow
VOC
drain
VOS
drain
-
drain-gate
gate
and
-
drain-source
and source
voltage.
terminals.
voltage.
terminals.
The DC voltage
The DC
voltage
between
between
the
the
21
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TERM
DEFINITION
+
V(NPN)
-
(PNP)
V
BVcps
IcEs
BVcno
Icgo
BVcpo
IcEo
Collector-emitter
current
Collector-emitter
emitter.
Collector-base
rent (Iggg)
Collector-base current
Collector-emitter
current
Collector-emitter
(lCgS)
(ICgO)
breakdown voltage
with
current with
breakdown
with the emitter open.
breakdown
with
current
the
with
the
base
shorted to emitter.
the
voltage
base
with
at a specified cur-
emitter
the
voltage
open.
the base open.
at a
specified
base
shorted to
open.
at a specified
+V (NPN)
+V(NPN)
-V
(PNP)
-V(PNP)
Bvpcs
IEcs
BvBco
Inco
Bvpgo
IBgo
Reverse emitter-collector
specified
collector.
Emitter-collector
collector
Reverse emitter-collector
specified
Emitter-collector
reverse
Reverse emitter-base
current
Emitter-base
reverse
current
and
current
voltage.
(IfgO)
voltage.
(1865)
current
reverse voltage.
(IpCO)
with
current with
with
current
breakdown voltage
the
collector
breakdown
with
the
with
the
breakdown voltage
the
with
the
voltage
base shorted
base shorted
open.
base
the
base
at a specified
open.
collector
open
open
at a
to
to
at
and
and
+V(NPN
)
+V(NPN)
+V(NPN
)
-V(PNP)
-V(PNP)
-V(PNP)
34
SAION
st
Graphic Symbols
Semiconductor
Devices
for
semiconductor
Semiconductor
rectifier diode;
Capacitive diode
Temperature-dependent d iode
Photosensitive
diode;
metallic
(varactor)
type
rectifier
A{-K
(]R
@
tlR
@
sTYrEr@
STYTE'O
O
\'^r
ry
Unidirectional
diode;
down
Bidirectional
down diode;
Light-activated type
negative
trigger
negative
trigger
resistance
diac
resistance break-
diac
break-
ilpil-typo
g
^g
PilP-type
ilpil_type
pi{p-typeg
,tr,r,@
b
$,-t
sTYrE2ou*
Photoemissive
Unidirectional
Bidirectional
diode
type
voltage regulator
diode;
a-r,
Q7
sTYr.Ero
OR
O
sTYrE2@
STYLET
o
sTYu2
@
Thyristor, bidirectional
Phototra
(N
gion
Current
PN P
N PN transistor
Unijunction
nsistor
-type)
PN
connection)
regulator
transistor
transistor
(without
diode
external base-re-
with N-type base
type; bi-switch
,@,
p
o4F
g
I
g
I
'O::
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per
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frequency
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is negative.
which
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frequencies
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the
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us
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current
the transistor
collector
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represented
fr EXPLANATION
tl're
Each
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This
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3
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gain
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greater
provide
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U
J
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three examples
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fr
unity,
and
frequency.
be
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A, but transistor
the
are
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the above
the
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gain
B; therefore,
same
different.
equation
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of
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A has a
although the
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at
shows
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current
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lower
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the
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go
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At
frequency:
alJ
frequency
po
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r
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gain.
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frequency
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TransistorB
Another example
frequency
transistors,
greater
is
much
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current
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current
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from
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a
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x
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x
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other
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Model
tjinrirtors
MHz
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C
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x
MHz
15
when
greater
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gain
times frequency.
530 for
A,
B and
C.
=
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=
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other
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=
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6E
WARRANTY SERVICE
INSTRUCTIONS
Refer
1.
2.
3. lf
If
your
to the
adjustments
Defgctive parts
period.
should
state the model
date the
terms
of
the
above-mentioned
your
with
Enclose
or ship
agency
your
a letter
PREPAID
(see
list of authorized B & K-Precision
local
distributor for
MAINTENANCE
may
that
was
unit
Warranty.
the
unit,
list enclosed with unit).
be applicable.
removed
be sent
and serial number
pack
describing the
from units which are within the One
PREPAID
purchased.
procedures
it securely
([IPS
preferred)
name
the
B &
DYNASCAN
2815
your
section of
to the
of the
parts
These
not
do
(preferably
problem
of
Service Deportment
K-Precision Product
Chicago, Illinois 60618
and
the
to
your
CORPORATION
West
Irving
B & K-Precision
Service Department
unit from which the
will
service
nearest service agency,
exchanged
be
correct
in the original
include
nearest B &
agencies
Group
Park Road
instruction
Year
listed below.
parts
at
problem you
the
your
carton
name and address.
K-Precision
has
been
or write to:
manual for
Limited
were removed and
no
charge,
or
authorized
misplaced,
Warranty
Be
under the
experiencing
are
double-packed).
Deliver
sure to
to,
service
contact
40
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98909
B
& K.PRECISION
MODEL
488-195-9-OO3
530 PAR.TS
LIST
SCHEMATIC
SYMBOL
R85
R79
R83,
81
Rl21
R101,
55
R22,97
R72
R92,
106
R56,59
RI03,58
c44
c42
c39,39,40,41
c20',25
c56,
57
,47,
50,49
c56,46
c43
L1
L2
L3
DESCRIPTION
RESISTORS
g-lKo,
!2%,r/qw,
y2%,y;W,
L3Ko,
!2%,y4W,
18KO,
199_KO,. ?0%, /eW,Horizontal
qg!{o,
$9Vo,laW,Horizontal
lg$sffl, P9Vo,
30Ksl,
I_0_0KQ,- P.0
?!ta,P0_V9,lcW,Honzontal
IKdl,,!20%,/cW,Horizontal
W,
+\07o,r/zW,Linear
7.o'_!:Y,
& CONTROIS
Deposited
Deposited
Deposited
Hotizontal
C:rbon
Horizontal
CAPACITORS
@I,iOVDC
lQy.f
l9Q{r@_10VDC
@25VDC
1Q09qr
47p,t@6.3vDcTantalum.orur
|
250vDc
@
.9474@?J0V
.|pt@l00VPolyester..
Electrolytic
Electrolytic
Electrolytic
polyester
Polyester
coIIs
Oscillator,
Oscillator,
Oscillator,30MHz
I
MHz
lg
MHz
Carbon
Carbon
C:rbon
Mount
Mount
Mount
Pot . .
Mount
Mount
Mount
Linear
Trimpot
Linear
Trimpbt . .009-224-i{0
Linear
Trimirot .
Linear
Linear
Linear
.....
Trimpot .
Trimpot
Trimiot .
B&K
PART NO.
002-039-9{0
002{40-9{0
002{41-9{0
.
008-2
1 6-9-00
.
008-241-9-00
.
.008-301-9{0
008-286-9{0
. . .
00g-297-9-00
. .008-289-9{0
.
021{40-9{01
.
022{50_t{0i
022084-ri0r
...027-013-9{01
.
.025427-9-001
....025-096-9{01
....025-I2O-gOOi
....044-035-9{01
. .
.044{36-t{0i
...044{39-g{Oi
coltrPosrrE
499-n4-9-ml
MODEL
530
PARTS
UST
SCTIEMATIC
SYMBOL
Dl4,
15,
16,
r7,24,25
D19,20,21,22,
23,3I,33,34,
35,
1,2,3,
13,18,32
8D4,5,6,7rL0,
It,27,28,30
D9,
10
D12,26
Q9,10,
Ir,12
Q4,5
2,
3,14,
Ql,
17,18,19,
22,24,29
Q13,20,21,23,
25,26,27,
28, 16
Qls
IC1, IC6, ICg,
rc3
ICl0
lc2,rc4,Ic7,Icg
IC5
DESCRIPIION
DIODES
IN695,GermaniumDiode
l
IN4148,
Rectifier
l
5.1V,
{Vo,IW Zener
l2V,!5%,1W
2N5550
MPS
2369 NPN
MPS
6515 NPN
MPS
6519 PNP Transistor
)
SPS-2306
AND
Silicon
Diode
Diode
Zener
NPNTransistor
Transistor
Transistor
NPNTransistor.
INTEGRATED
LM324,
4013,
4011,
40z3,Triple
Quad
Dud
Quad
OP-Amp
D Flip-Flop
2Input
Nand
3Input
TRANSISTORS
Diode
Diode
.
.
CIRCI,IITS
Gate
Nand
Gate
B&K
PART
NO.
...150{02-9{01
.
151-038-9{01
.
151{50-9{01
.
152-030-9-001
. .
152{39-9{01
....176133-9{01
. . tZ6{49-9O01
. .
126-050-9{01
. . .
t77-OtS-9-001
...t76{.29-9-001
307-060-9{01
307-062-9{01
. . . .
307-063-9-001
...307470-9{01
S9
s4
S1
s3
S8
s2
s6
s7
S5
SWITCHES
Iradldentification,hver
Spring Return,
fr
Range,
SPDT,
DPDT,
DPDT,
i$|T:
Momentary4-Pole,Push-Button
Rotary
.
MHz
(Speaker
Slide
(Power
Slide
PC
33!il$!
(Drive
Slide,
S'*l/H'*,' : : : :
ON/OFF)
ON/OFF)
LO/HI)
: : . : : :
....080{02-9401
. . .084-001-9{01
. . . .084{01-9{03
. . . .
: : : : : : :
:1084{4se{01
...088-029-9-001
.083-195-9-001
.083-205-9{01
084{43-9-001
ots
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