B&K 530 User Manual

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INTRODUCTION

The B&K-hecision
signed for
with special f'eatures
out-of-circuit. It uses a high-current, low duty-cycle
technique
circuitry.
user to identify
in-ciicuit tests and all

the frequency at

in-circuit

to test

and a low-current

An exceptional

Model 530 Semiconductor

out-of-circuit semiconductor

and

for

nraking

transistors

the

ternrinals

out-of-circuit

feature is

which

transistor

additional tests on

presence

the

in

drive systern which enables the

of the

checks.

provision

for rleasurement

gain

is one or unity.

Tester

testing,

devices

of shunting

device in

is de-

pulse

most

of

This

fr rating

the

is
devices.

For out-of-circuit

gm,

FET
provides for testing high current
to 2 amperes,

instrument is

The

control

devices.

manipulation,

for a transistor

the low

without

measurements

duty-cycle,

over-dissipation.

designed

facilitating

is applied

and

of transistor

high-power

devices

for a minimum

at

rapid

pulse

rated

testing

to

bipolar

and

beta

technique

current,

amount

of most

up

of

SPECIAL

l. Patented

successful
low shunt irnpedances
device under test.

Six-position TEST
device
nraking it unnecessary to
identification. Can be
additional tests
position.

3.

Base

operated when

transistor are identified

Gate lead is identified on

4.

Autornatic
bipolar

5. A-udible tone tells when the device under
good
testins

linrited-energy

use of in-circuit testing

tested in all

being

can be

gate

or

-

lead

identified by color as Test Switch is

testing

polarity

devices

no need to take eyes

hard-to-set-at devices.

and

pulse

circuit

with

complete safety for the

switch

indication to identify

N-channel

sequentially

possible

know

left

GOOD

in

made without

with HI

when

testing with LO drive.

FET's.

or

off

permits

presence

in the

connects

configurations

the device terminal

position
memorizing

drive. All leads

NPN

P-channel

circuit

for

board

highly

the

that

so

test

PNP

or

FET's.

test is

while

FEATURES

6.

of

7.

8.

of

9.

10.

n.

t2.

Measures beta of low-power
in two
high-current

for accurate
overdissipation.

Measures
sistors.

Measures gm of low-power
Both depletion-mode
FET's

Measures
age

prevents

Has a

wide

Clip-on
in difficult locations.
further tests.

Choice
out-of-circuit

ranges. A special

(1. = 2 arnp for

ttsting of

(gain-Uandwidth

&

be tested.

can

voltage

ratings up to

damage to devices

compressed

leakage current

test leads make

of

breakdown

test leads

tests.

100V. Automatic current

leakage

300

power

enchancement-mode

and

under

meter

on a

range

positive

Frees operator's hands

or

high-power

and

pSEC

0

product)

and

and

single meter.

front

l%

,

=

scale, which

connections

pulsing

200)
transistors

of

high-power

reverse voltage leak'

test.

panel sockets

transistors

duty-cycle,

circuit

without

bipolar

FET's.

power

limiting

displays

to devices

to make

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Determines

1.
or out-of-circuit.

Determines

2.
Identifies

3.

Identifies

4.

5. Indicates

channel).
Identifies

6.

Measures

7.

transistors.

BRIEF

good

good
Emitter-Base-Collector
gate

lead

polarity

Cathode-Gate-Anode

all breakdown

or bad

or bad

FET.

of

good

of

transistors,

in' or

diodes

leads

devices

leads

leakage

and

SUMMARY

or SCR's,

FET's

out'of-circuit. -

of transistors.

(NPN

PNP;

or

of SCR's.

parameters

OF

in-

or P

N

HINTS

WHAT

of

AND

THE

Measures

8.
Measures

9.

100

Measures

10.
Measures

1 1.

0-100

Determines

12.
Will

13.
depletion

KINKS

WILL

530

lpg5 and
BVggg

v.

reverse leakage

fr of

0-500

MHz,

whether

new

test

types.

DO

gate

leakage

transistors

of

current

bipolar

MHz,0-1500

device

FET's, both

power

FET's.

of

PIV

and

of diodes.

transistors,

MHz.

transistor,

a

is

enhancement

of diodes

ranges:

3

in

or SCR.

FET

up

to

and

{

I

i

I

l

{

t

t

T

il

,ru

IDENTIFYING TRANSISTORS

Nearly all

1.

2.

3. The T0-66

4. The base

5. Most

the tubular

either
standard

Power
TO-3 can
and

packages
usually, but

and
continuity
mounting

either
facing the flat

case,

when

source in
nearly
interchanged

TO-5

transistors in stud

three-digit

the center

leail

the center

the collector

plastic FET's

facing the flat side

all

germanium

package.

either

be

2N-numbers are

power

are nearly

not always, connected

check

tab.

of most modern

the middle, but

junction

with no adverse

transistors come

type with flexible

packages

germanium,

transistors

always

lead. This

between

lead

side with the

lead

FET's, the source and drain can be

always

or the

is in the

have the

with the leads down and

DIODES

AND

in

.rnetal

or

leads,

or in the TO-5

siliCon

mostly

and the

silicon. The collector

the collector

plastic-type

right-hand

leads down.

middle.

gate

there are

effects.

or FET. Two-

germanium.

power

plastic

to the mounting

verified by a

be

can

lead

pin

and

transistors

lead

In the latter

on the right side

exceptions.

cases,

the

in

or

tab
tab
the

when

the

In

transistors

All

6.

emitter

and
Darlingtons.

gain

some

have

will

leads interchanged,

with

with

the

the collector
exception

of

{

{

Germanium

7.

their
four
Silicon
light-sensitivg
tiftrt.

is

is

can be
Power

8.
configurations
following comparisons

The APPENDIX

9.

schematic symbols

the

530. This
device

10.

extensive list

An
parameters

signal

transparent

bands,

color

diodes

fne

either

FET's

prior

usually

urd must

"moose"

germanium or silicon.

in

similar

FET
Drain
Gate

Source

information

to testing.

provided

is

hollow

glass

or type

are

be

types,

packages

TO-3

to

bipolar

:

instruction

this

to

for

should be

of semiconductor

the APPENDIX

in

usually

diodes

can

cases

numbers

painted

protected

such as

Transistor

Collector
Base
Emitter

devices

recognized

be

with

either

printed

because

from

the'stud

generally have lead

transistors,

(case)

manual

tested by

used to identify

test

the

and

also.

by

three or

on them.

silicon

operating

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USING

MODEL 530

THE

I

{

IN-CIRCIIT

Make

TESTING

sure
being tested,
charged.

A. Transistors

1. Set the DRIVE

2. Connect the
the three leads of the device
test leads must

color Test kad Sockets
Move

3.
positions
glows.

Switch
whether the device is
P

channel.

good

will do so in only

"THINGS

(see
this

Test Switch

transistor

Identification
good
positions

IBad Identification Window

the
cally all

BASE

4. If

there is
lamps
moved througlr its six
the device under test

Device

a.

(-uy

b. Device with

Device

c.

"SPECIFICATIONS").

FET

d.

5. Re-test the
transistors

most

adjacent Test
BASE

Window.

then be identified.
If

6.

the device tests

4(d)

above

If

the device

7.

position,
circuit
cedures.

SCR'S:

B.

the DRIVE switch

Set

1.

CAI.]"fION

all

power

is turned

off

in the

circuit

and that all capacitors are dis-

FET's:

and

Switch

three

be

(5)

test

leads

plugged

to the LO

you

into their

position.

(in

any manner) to

wish to test. The

respective

(6).

the Test

Switch

until one of the two red

A tone also will be

(8)

is ON. The lamp that

In LO

TO KNOW

(4)

NPN

drive,

most transistors

one

ABOUT

position,

through

slowly

lamps

(1)

heard if SPEAKER

glows

(l)

or PNP

indicates

(2)

that test

Test

Switch

THE 530").

all the leads of the

can be identified as shown in the I-ead

(LO

or

having
junction

color indicated is

Window

good

no

glows)

as

with high

not function

(3).

HI

drive)

the

FET's

indication

Most FET's

in

same BASE

are

gate

the

(neither

the Test Switch

positions,

of

is one

the

leakage

properly

two

Test Switch

color shown in

will test

(3),

since

symmetrical. The

Iead of the

of the two

(a)

is slowly

in LO drive, then

following:

or very low

in

circuit).

open/shorted elements.

with excessive

that

will

device,

that test

Switch

shown

color

Only the

be true.

could

does not

HI

in

drive,

not test with

using HI

base

good

circuit shunting

LO drive.

drive. In

good

positions

in the kad

lead of the

using HI

test
lemove

drive, then 4(a) or

good

in any Test Switch

the

HI

will do

so in

having the same

Identification

transistor

from the

device

and re-test using OUT-OF-CIRCUIT

(5)

to the

position.

HI

its six

(2),

or

or N oi

position

In

practi-

FET.

gain

(see

drive,

/wo

can

pro-

2. Connect
the tfuee

3. Move

the three
leads of the

the Test Switch
positions until the
position and
position
the

4.

The SCR

b. One

are
a. One

haying

Identification

Lead

is

obtained:

NPN.
PNP,

good

NOTE: indications

IDENTIFICATION:

LEAD

a. The BASE color

Window

tion
NPN lamp

BASE color

Window

tion

(2)

PNP

the SCR

the

circuit

lamp

tests

5.

b. The

If
from
to excessive shunting

procedures.

circuit

Diodes:

C.

l. Set

LEAKAGE

2. Set Test Switch
identification).

3. Set

4. Connect

NPN/PNP Switch

the

to

diode

be

tested.

blue

5. Adjust the LEAKAGE

approximately

panel.

trol

6.

7.

Depress
while
Switch
(Green

While

the

keeping

(a)

to each
identification.)

base

performing

LEAKAGE/GAIN

approximately

be

will
Test Switch

Switch

Test

the shunting

on
position
ihe diode

having

cation
full-scale
heavily
example,

-or

relay
should
re-tested

(

will

giving

under

the collector

Window

readings

shunted

transient

a

solenoid

a

be disconnected

using

(in

leads

test

you

(4)

wish to

slowly

SCR

NPN lamp

PNP lamp

a different

(2)

BASE

Window

following indications

the

if

only

is

the

same BASE

in the

gate

must

not have

shown

(3)

(1) glows.

in the

shown

cathode lead when

is the

glows.

should be

bad, then

and

it

tested again

in-circuit),

VOLTS control

(a)

to top

(12)

yellow

and

(14)

position

to PNP.

test leads across

VOLTS Control

l0 volts, as

indicated on

PUSH-TO-TEST
this switch

while

)

give

the highest

test

(3).
by

depressed,

of

step
Meter

upper

the

6, observe

(19).

full scale

other

the

a lower

effect of

the circuitry.

reading,

is connected

(C)

color

If

both

the diode

low-resistance

The
for one

reading, depending

in the
is either

suppressor

In this case

coil.

from

OUT-OF-CIRCUIT

any manner)

test.

through

(l)

glows

glows

in

as shown in

color

(3).

color.

ldentifica'

kad

when

lead

ldentifica'

kad

removed

(muy

be

using

to zero.

(Green

the

Switch

(13)

rotate

two

results

the

the

positions.

meter

position of

position of

cuthode of

the

test lead

to the

positions

Lead

Identifi'
produce

shorted

circuitry;

across

diode

the diode

the circuit

procedures.

to

its six

in one

another

the

the

subjebt

out'of-

base

the

(1a)

to

con'

and,

lest

on

reading

the

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or

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and

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(19).

meter

fr Tests:

3.
Measurement

transistors
A detailed
provided in the appendix

of the

is

complex

explanation

parameters of bipolar

fr

theory and

in

of

of this manual.

performance.

fr measurements

position

uppermost
position
Switch

cation
Connections
provided

is

Socket

indicated

required,

for

position

for

positions

[rad

in

can

the device

or

(7).

The

an

by

"NC"

is

have

ldentification

be

"X".

entered.

I and
Both

2.
the

made

can

required

Where no connection

the adjacent

of

green

base

Window

the

to

inserted

be

connections

these

identifi-

test

into

Test

(3).

leads

Test

are

is

When

measuring

some transistors.

with
may occur
and the G500
is

always
numerical
the 0-500 rimge

To obtain reliable

a.

frequency characteristics

under test, the

of the device

previous

the
Insert

b.

appropriate
transistor leads must
socket
be made
the three-lead
connections
additional
the accuracy
three-lead adapter
absolutely necessary.

the fr

Set

c.

1500 range

0­meter

If the reading

d.

the transistor

of

fr, it is

on two

the range

value

lead designations.

(18)

ranges, such

MHz ranges.

reading

(in

this

applies).

lead identification

must

tests.

the transistor under

test socket

fr

to fit into

adapter

the

to

lead length

of

RANGE

and read

the

on

greater

is

under

important to

the same meter deflection

The fr of the transistor

that

example,

information

known

be

properly

If

the socket

provided to

transistor.

can be detrimental

this test; therefore,

should be

MHz Switch

the

MHz

1500

than 300, this is the

test.

know that,

as the 0-100

gives

the highest

the reading on

regarding

of the

(15)

the device

transistor

polarity

and

as determined

into the

test

(16).

or

match

cannot

provided,

make

Note that any

used only

(17)

to the

value on the fr

scale.

MHz

the

The

the

use

the

to

the

in

i

NUMBER

LEAD COLOR

TEST

(3)

Yellow

Device

Tests

BVCES,
BVCEO,

ICpS

ICEO

BVCBO,tCgO

BVCpS

4.
With Base

a.

b.

c.

IgCS

Ip,CO
Ig,gO

BVECS,
BVECO,
BVEBO,

if

fr

Emitter

X
X

NC

X
X
X

(Collector-Emitter

Shorted

Connect
into the

Make
position.

Move the
which
dicated by

transistor

test socket

the DRIVE

sure

Test Switch

produces a

the

AND

(2)

Green

Base

X

NC

X
X
NC
X

to Emitter):

to the

(7).

switch

good

polarity

lights

(l)

Blue

Collector

X
X
X
X
X
NC

Breakdown

test leads or

(5)

is in the

(4)

to the

indication,

(l)

or

(2).

Test
Switch
Position

I
I

I
2
2
2

Voltage

plug

LO

position

in-

as

it

1

!

I

{

I

l

e. If the observed

the RANGE,

and observe

range
reading
transistor

If

f .

the observed
RANGE,
and observe

the transistor

of
readings

If

E.

All
eliminate the
identification
when the device lead
the following
required for
positions

there

ranges

absolute

NOTE

voltage and

of

MHz

greater than

is

under

MHz

meter

below 5 on

is a difference

the scales

where

value for

ON

BREAKDOWN

breakdown

need to

when

beginning

table

the

device

Test Switch

less than 300, set

reading

test.

reading

switch

under

VOLTAGE AND

identification

indicates

is

switch

(18).

fr is the

know

(4)

(17)

the

meter

50,

this

is less than

(17)

to the

This

test. The accuracy

range is

this

in readings

overlap,

most accurate.

TESTS

tests outlined here

the device lead

test.

the

the connections

tests. The indicated

correspond

to the 0'500

(18).

If

the

is the fr of

0-100 range

is the fr reading

questionable.

the

In

is known,

to the

the

50, set the

of

on two

largest

cases

good-bad

If the

good

rn a
of
identified
test

to about

and move
positions which

the lowest
GAIN
transistor

d. Set

e. Set

indication

Test Switch

by observations

as follows:

o

Set the

10 volts.

o

Depress

the Test

r

Test Switch

The

indicated

(19)

Meter

leads can

the NPN/PM
corresponding
which lights.

the LEAKAGE

zero.

NOTE

paragraph

of

test

in two adjacent

(4),

the collector

LEAKAGE

PUSH-TO-TEST

the

gave a

is

VOLTS

Switch

be identified.

(4)

good

(4)

position

current

position in.which

the

Switch

to the

"A-1"

results

positions

can

during

indication.

VOLTS Control

the leakage

Control

Switch

between

LEAKAGE/

on

(12)

polarity

the

which

to

light

(14)

(13)

two

gives

the

(1)

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(2)

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Depress

d.

set the LEAKAGE VOLTS
specified

PUSH-TO-TEST

the

test voltage.

button

control

(13)

(14)

and

to the

e.

Disconnect the voltmeter, if used, after the
test

voltage has been

age

current

measurement will

set; otherwise the

in error.

be

leak-

Disconnect
test voltage
age current

With'the

f.

pressed,
indicated on
This
test.

10. BVB3O
With

Collector

a.

Set the LEAKAGE VOLTS
zeto,

Set the

b.

adjacent
paragraph
indication

Disconnect

c.

connecting
bending the
transistor
emitter

Depress

d.

adjust the
until a
current is
meter
device
measured accurately
impedance voltmeter
emitter
not leave the
voltage is

the voltmeter, if used, after the

been set; otherwise the leak-

has

measurement

PUSH-TO-TEST

observe

LEAKAGE/GAIN meter

1699

is the

(Reverse

Emitter-Base

Open):

Test Switch

to that

"2"

which

in kad Identification

the

collector lead, either

the test lead if

collector lead and

in Test Socket

and base leads are

the PUSH-TO-TEST

LEAKAGE VOLTS

increase

sharp

observed on LEAKAGE/GAIN

(19).

This is

under test. This voltage

terminals of the

voltmeter

adjusted.

will

the leakage

value of the device

Breakdown

(4)

used for the BV6'ps

has the

so

(7)

connected.

or

the BVegO voltage

by

connecting a

across the

device under test.

connected after the

in error.

be

button

sudden change in

(13)

de-

current

Control

to

the

sarne*Firr

Window

connected, or by

inserting the

so that

switch

Control

as

(19).

under

Voltage

(la)

to

position

test of

color

(3).

by

dis-

the

only

(13)

and

(14)

of the

can be

high-

base and

Do

With
pressed,
dicated
is

the

12. BVBCO
Volfage With

a. Set

zeto.

Set the Test Switch

b.

adjacent to
paiagfaph
indication in I-ead Identification Window

Disconnect the

c.

necting the test lead if so
bending the base
sistor in Test Socket
emitter and

Depress the
adjust the LEAKAGE VOLTS
until
current is observed on LEAKAGE/GAIN
meter
device under test. This voltage
measured accurately
impedance
emitter terminals of the
not
voltage

I3CO

13.

Base

Open):

PUSH-TO-TEST

the

observe

LEAKAGE/GAIN meter

on

IpgO

value of

(Reverse

Base Open):

LEAKAGE VOLTS

the

that

"2"

which has the same-Fise

collector

PUSH-TO-TEST

a sharp

(19).

leave the

is adjusted.

(Reverse

increase or

This is the BVECO voltage

voltmeter across the

voltmeter

Emitter-Collector

the leakage current as

the

button

device under

Emitter-Collector

(13)

(19).

test.

Breakdown

Control

(4)

to the

used for the BV6'pg test

lead, either

base

lead

connected, or by

and inserting the tran-

(7)

so that

leads are

switch

sudden change in

by connecting a

device

connected

position

by discon-

only

connected.

(13)

control

can be

collector and

under test. Do

after

Current

de-

This

(14)

color

and

(14)

of

high-

With

in-

to

of

(3).

the

the

the

l4

(Reverse

IBgg

11.
tor

Open):

This

current

voltage.

follows:

a. Leave

in the
The transistor

b.

the
If

c.

required, the
AGE VOLTS
exact test
impedance voltmeter
base

d. Depress the

set the
specified

Emitter-Base

is

a specified limit at a

If

these values are known,

Test Switch
previous

previous

only an approximate voltage indication

terminals

LEAKAGE VOLTS

test.
connections

test.

panel
control

voltage is desired, connect a high-

of the device

PUSH-TO-TEST

test voltage.

Current With Collec-

specified test

proceed

(4)

in

the

calibration of the LEAK-

(14)

to the emitter and

position

test

are the

can

under test.

control

same as in

be used.

button

(14)

(13)

to the

used

If the

as

is

and

This

current is a specified limit
voltage. If
follows:

Leave

a.

in
The

b.

the
If

required,
AGE VOLTS
exact test
impedance
collector terminals

Depress

d.

set the
specified test voltage.

e.

Disconnect
test
age

these values

Test

Switch

previous

the

transistor

previous

only

voltage

current measurement

test.

an approximate voltage

the panel

control

voltage is

voltmeter to

PUSH-TO-TEST

the

LEAKAGE VOLTS

the voltmeter,

has

at a specified

arc known,

(a)

in the

test.

connections are

calibration of the LEAK-

of the

been

test

the same as in

(14)

can be used.

desired, connect a

the emitter

device under test.

button

control

used, after the

if

set;

otherwise the leak-

will

in error.

be

proceed

position

indication

(13)

(14)

used

If

high-

to the

test

as

is

the

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