Bay Linear IRL830S, IRL830T Datasheet

Bay Linear

Bay Linear

Bay LinearBay Linear

Linear Excellenc e

POWER MOSFET

Description

The Bay Linear MOSFET’s p r ovide the designers with t he best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
mount power package with a power dissipation up to 2 Watts

2

surface

Advance Information

IRF830

Features

Dynamic dv/dt Rating

•

Repetitive Avalanche Rated

•

Fast Switching

•

Ease of Paralleling

•

Simple Drive Requirements

•

V

= 500V

DSS

R

DS (ON)

I

= 4.5A

D

= 1.5 Ω

Ordering Information

Device Package Temp.

IRL830T TO-220
IRL830S TO-263 ( D2 )

0 to 150°C
0 to 150°C

Absolute Maximum Rating

ID@ TC =25°°°°C
ID@ TC =100°°°°C
IDM
PD @ TC =25°°°°C

V

GS

E

AS

I

AR

E

AR

dv/dt
TJ, T

STG

Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current (1) 18
Power Dissipation 74
Linear Derating Factor 0.59
Linear Derating Factor ( PCB Mount, D
Gate-to- Source Voltage
Single Pulse Avalanche Energy (2) 280
Avalanche Current (1) 4.5
Repetitive Avalanche Energy (1) 7.4
Peak Diode Recovery dv/dt (3) 3.5
Junction & Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Thermal Resistance

R

JC

θθθθ

R

CS

θθθθ

R

JA

θθθθ

R

JA

θθθθ

Junction-to Case - - 1.7
Case-to-Sink, Flat, Greased Surface ( TO-220)
Junction-to Ambient ( PCB Mount, D2 )
Junction-to Ambient - - 62

Parameter Max Unit

@10V 4.5

Parameter

GS

@10V 2.9

GS

2

) (1) 0.025

±

20

−

55 to +150

Min Typ Max Units

- 0.50
40

A

W

W/°°°°C

V

mJ

A

mJ

V/ns

°°°°C

°°°°C/W

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

IRF830

Electrical Characteristics (

TC = 25°°°°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

V

(BR)DSS

V

(BR)DSS

∆∆∆∆T
I

D(ON)

R

DS(ON)

V

GS(TH)

g

fs

I

DSS

J

Drain-to-source Breakdown
Voltage

/

Breakdown Voltage
Temperature Coefficient
On-State Drain Current
(note 2)
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage
Current

V

V

GS

V

V

Gate-to-Source Forward

I

GSS

Leakage
Gate-to-Source Reverse
Leakage

Q

g

Q

qs

Q

gd

t

d ( on)

T

r

t

d (off)

T

f

LD
L

S

C

iss

C

oss

C

rss

Total Gate Charge ID =3.1A - - 38
Gate-to-Source Charge V
Gate-to-Drain (“Miller”)

Charge
Turn-On Delay Time - 8.2 ­Rise Time - 16 ­Turn -Off Delay Time - 42 ­Fall Time

Internal Drain Inductance - 4.5

Between lead 6mm (0.25in.)

from package and center or die
Internal Source Inductance
Input Capacitance - 610 ­Output Capacitance - 160 ­Reverse Transfer Capacitance

Source-Drain Rating Characteristics

= 0V, ID = 250µA

GS

Reference to 25°C,

I

= 1mA

D

> I

D(ON)

V

=10V, ID = 2.7A

GS

x R

DS(ON)

Max

(note 4)

DS = VGS, ID =

50V, ID = 2.7A

V

DS =

250µA

V

500V, V

DS =

= 400V, V

DS

T

V

V

DS

V

= 10V (note 4) 22

GS

V

DD

I

D

R

GS

= 125°C

C

= 20V 100

GS

= -20V

G

= 400V - - 5.0

= 250V

= 3.1.1A

Ω

= 12

G

0V 25

GS =

= 0V,

RD = 79Ω (note 4)

contact

V

= 0V

GS

V

= 25V

DS

F = 1.0MHZ

500

- 0.61 -

4.5

1.5

2.0 - 4.0

2.5 - -

- ­250

- -

-100

- 16 -

-

- 7.5 -

- 68 -

V

V/°°°°C

A
ΩΩΩΩ

V

S

µµµµA

nA

nC

ns

nH

pF

Symbol Parameter Conditions Min Typ Max Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.

2. V

3. I

4. Pulse with ≤ 300µs; duty cycle ≤ 2%

Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) (Note 1)
Diode Forward Voltage (note 4)
Reverse Recovery Time - 320 640
Reverse Recovery Charge
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD)

= 50V, starting Tj = 25 °C, L = 24 mH RG = 25Ω, I

DD

≤ 4.5A, di/dt ≤ 75A/µs, VDD ≤ V

SD

(BR)DSS

MOSFET symbol showing the
integral reverse p-n junction
diode.

=25°C, IS=2.5A,VGS=DV

T

J

T

=25°C, IF=2.1A

J

di/dt=100A/µs (Note 4)

= 4.5A

, T

j

≤ 150°C

AS

- - 4.5

- - 18

- - 1.6

- 1.0 2.0

A

V

ns

µµµµC

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com