Bay Linear IRL820T, IRL820S Datasheet

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

POWER MOSFET

IRF820

Advance Information

Ordering Information

Device Package Temp.

IRL820T TO-220

0 to 150°C

IRL820S TO-263 ( D2 )

0 to 150°C

Absolute Maximum Rating

Parameter Max Unit

ID@ TC =25°°°°C

Continuous Drain Current , V

GS

@10V 2.5

ID@ TC =100°°°°C

Continuous Drain Current , V

GS

@10V 1.6

IDM

Pulsed Drain Current (1) 8.0

A

PD @ TC =25°°°°C

Power Dissipation 50

W

Linear Derating Factor 0.40
Linear Derating Factor ( PCB Mount, D

2

) 0.025

W/°°°°C

V

GS

Gate-to- Source Voltage

±

20

V

E

AS

Single Pulse Avalanche Energy 210

mJ

I

AR

Avalanche Current (1) 2.5

A

E

AR

Repetitive Avalanche Energy (1) 5.0

mJ

dv/dt

Peak Diode Recovery dv/dt (3) 3.5

V/ns

TJ, T

STG

Junction & Storage Temperature Range

−

55 to +150

Soldering Temperature, for 10 seconds 300 (1.6mm from case)

°°°°C

Thermal Resistance

Parameter

Min Typ Max Units

R

θθθθ

JC

Junction-to Case - - 2.5

R

θθθθ

CS

Case-to-Sink, Flat, Greased Surface (TO-220) - 0.50

R

θθθθ

JA

Junction-to Ambient ( PCB Mount, D2 ) - - 40

R

θθθθ

JA

Junction-to Ambient - - 62

°°°°C/W

Description

The Bay Linear MOSFET’s p r ovide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 Watts. Also, available in a D

2

surface

mount power package with a power dissipation up to 2 Watts.

Features

•

Dynamic dv/dt Rating

•

Repetitive Avalanche Rated

•

Fast Switching

•

Ease of Paralleling

•

Simple Drive Requirements

V

DSS

= 500V

R

DS (ON)

= 3.0 Ω

I

=2.5A

Bay Linear

Bay LinearBay Linear

Bay Linear

Linear Excellenc e

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

IRF820

Electrical Characteristics (

TC = 25°°°°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

V

(BR)DSS

Drain-to-source Breakdown
Voltage

V

GS

= 0V, ID = 250µA

500

V

V

(BR)DSS

/

∆∆∆∆T

J

Breakdown Voltage
Temperature Coefficient

Reference to 25°C,

I

D

= 250µA

- 0.59 -

V/°°°°C

I

D(ON)

On-State Drain Current
(note 2)

V

GS

> I

D(ON)

x R

DS(ON)

Max

2.5

A

R

DS(ON)

Static Drain-to-Source
On-Resistance

V

GS

=10V, ID = 1.5A

(note 4)

3.0

ΩΩΩΩ

V

GS(TH)

Gate Threshold Voltage

V

DS = VGS, ID =

250µA

2.0 - 4.0

V

g

fs

Forward Transconductance

V

DS =

50V, ID = 1.5A

1.5 - -

S

V

DS =

500V, V

GS =

0V 25

I

DSS

Drain-to-Source Leakage
Current

V

DS

= 400V, V

GS

= 0V,

T

C

= 125°C

- ­250

µµµµA

Gate-to-Source Forward
Leakage

V

GS

= 20V 100

I

GSS

Gate-to-Source Reverse
Leakage

V

G

= -20V

- -

-100

nA

Q

g

Total Gate Charge - - 24

Q

qs

Gate-to-Source Charge - - 3.3

nC

Q

gd

Gate-to-Drain (“Miller”)
Charge

I

D

= 2.1A

V

DS

= 400V

V

GS

= 10V

(note 4)

13

nC

t

d ( on)

Turn-On Delay Time - 8.0 -

T

r

Rise Time - 8.6 -

t

d (off)

Turn -Off Delay Time - 33 -

T

f

Fall Time

V

DD

= 250V

I

D

= 2.1A

R

G

= 18

Ω

RD = 100Ω (note 4)

- 16 -

ns

LD

Internal Drain Inductance - 4.5 -

L

S

Internal Source Inductance

Between lead 6mm (0.25in.)

from package and center or die

contact

- 7.5 -

nH

C

iss

Input Capacitance - 360 -

C

oss

Output Capacitance - 92 -

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

F = 1.0MHZ

- 37 -

pF

Source-Drain Rating Characteristics

Symbol Parameter Conditions Min Typ Max Units

I

S

Continuous Source Current
(Body Diode)

- - 2.5

I

SM

Pulsed Source Current
(Body Diode) (Note 1)

MOSFET symbol showing the

integral reverse p-n j unction

diode.

- - 8.0

A

V

SD

Diode Forward Voltage (4)

T

J

=25°C, IS=2.5A,VGS=DV

- - 1.6

V

t

rr

Reverse Recovery Time - - 520

ns

Q

rr

Reverse Recovery Charge

T

J

=25°C, IF=2.1A

di/dt=100A/µs (Note 4)

- 0.70 1.4

µµµµC

t

on

Forward Turn-On Time Intrinsic turn -on time is negligible (turn-on is dominated by (LS+LD)

Notes: 1. Repeti tive Rating; pu lse width limited by max. junction temp erature.

2a. V

DD

= 50V, starting Tj = 25°C, L = 440µH RG = 25Ω, I

AS

= 28A

3. I

SD

≤ 2.5A, di/dt ≤ 50A/µs, VDD ≤ V

(BR)DSS

, T

j

≤ 150°C

4. Pulse with ≤ 300µs; duty cycle ≤ 2%