Bay Linear IRL540T, IRL540S Datasheet

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

POWER MOSFET

IRF540

Advance Information

Ordering Information

Device Package Temp.

IRL540T TO-220

0 to 150°C

IRL540S TO-263 ( D2 )

0 to 150°C

Absolute Maximum Rating

Parameter Max Unit

ID@ TC =25°°°°C

Continuous Drain Current , V

GS @10

V 28

ID@ TC =100°°°°C

Continuous Drain Current , V

GS @10

V 20

IDM

Pulsed Drain Current 110

A

PD @ TC =25°°°°C

Power Dissipation 150

PD @ TA =25°°°°C

Power Dissipation ( PCB Mount, D

2

) (1) 3.7

W

Linear Derating Factor 1.0
Linear Derating Factor ( PCB Mount, D

2

) (1) 0.025

W/°°°°C

V

GS

Gate-to- Source Voltage ( TO-220 )

±

20

V

GS

Gate-to- Source Voltage ( D2 )

±

10

V

E

AS

Single Pulse Avalanche Energy ( TO-220 ) (2a) 230

E

AS

Single Pulse Avalanche Energy ( D2 ) (2b) 440

mJ

I

AR

Avalanche Current 28

A

E

AR

Repetitive Avalanche Energy 15

mJ

dv/dt

Peak Diode Recovery dv/dt 5.5

V/ns

TJ, T

STG

Junction & Storage Temperature Range

−

55 to +175

Soldering Temperature, for 10 seconds 300 (1.6mm from case)

°°°°C

Thermal Resistance

Parameter

Min Typ Max Units

R

θθθθ

JC

Junction-to Case - - 1.0

R

θθθθ

CS

Case-to-Sink, Flat, Greased Surface ( TO-220) 0.50

R

θθθθ

JA

Junction-to Ambient ( PCB Mount, D2 ) - - 40

R

θθθθ

JA

Junction-to Ambient - - 62

°°°°C/W

Description

The Bay Linear MOSFET’s p r ovide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 Watts. Also, available in a D

2

surface

mount power package with a power dissipation up to 2 Watts.

Features

•

Dynamic dv/dt Rating

•

Repetitive Avalanche Rated

•

Fast Switching

•

Ease of Paralleling

•

Simple Drive Requirements

V

DSS

= 100V

R

DS (ON)

= 0.077 Ω

I

D

=28A

Bay Linear

Bay LinearBay Linear

Bay Linear

Linear Excellenc e

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

IRF540

Electrical Characteristics (

TC = 25°°°°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

V

(BR)DSS

Drain-to-source Breakdown
Voltage

V

GS

= 0V, ID = 250µA

100

V

V

(BR)DSS

/

∆∆∆∆T

J

Breakdown Voltage
Temperature Coefficient

Reference to 25°C,

I

D

= 1mA

- 0.13 -

V/°°°°C

I

D(ON)

On-State Drain Current
(note 2)

V

GS

> I

D(ON)

x R

DS(ON)

Max

28

A

R

DS(ON)

Static Drain-to-Source
On-Resistance

TO-220: V

GS

= 10V, ID = 17A

D

2

: V

GS

= 5V, ID = 17A (note 4)

0.077

ΩΩΩΩ

V

GS(TH)

Gate Threshold Voltage

V

DS

= V

GS,ID

= 250µA

2.0 - -

V

g

fs

Forward Transconductance

V

DS

= 50V, ID = 17A

8.7 - -

S

VDS=100V,VGS=0V 25

I

DSS

Drain-to –Source Leakage
Current

V

DS

=80V,VGS=0V,TJ=150°C

- ­250

µµµµA

Gate-to-Source Forward
Leakage

V

GS

= 20V 100

I

GSS

Gate-to-Source Reverse
Leakage

V

GS

= -20V

- -

-100

nA

Q

G

Total Gate Charge ID=17V - - 72

Q

qs

Gate- to -Source Charge V

DS=

80V - - 11

nC

t

d ( on)

Turn-On Delay Time V

DD=

50V - 11 -

t

f

Fall Time RD=2.9 - 43 -

t

d (off)

Turn -Off Delay Time

R

G=

9.1

Ω

- 53 -

t

r

Rise Time ID=17A - 44 -

ns

LD

Internal Drain Inductance

-

4.5

-

L

S

Internal Source Inductance

Between lead 6mm(0.25in.) from
package and center or die contact

- 7.5 -

nH

C

iss

Input Capacitance V

GS=

0V - 1700 -

C

OSS

Output Capacitance V

DS=

25V - 560 -

C

rss

Reverse Transfer
Capacitance

F =1.0MHZ - 120 -

pF

Source-Drain Rating Characteristics

Symbol Parameter Conditions Min Typ Max Units

I

S

Continuous Source Current (Body
Diode)

- - 28

I

SM

Pulsed Source Current (Body
Diode)

MOSFET symbol showing
the integral reverse p-n
junction diode.

- - 110

A

V

SD

Diode Forward Voltage

T

J=

25°C, IS=28A,V

GS=

DV

- - 2.5

V

t

rr

Reverse Recovery Time - 180 360

ns

Q

rr

Reverse Recovery Charge

T

J=

25°C, IF=17A

di/dt=100A/µs

- 1.3 2.8

µµµµC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by

(L

S+LD

)

Notes: 1. Repeti tive Rating; pu lse width limited by max. junction temp erature.

2a. V

DD

= 25V, starting Tj = 25°C, L = 440µH RG = 25Ω, I

AS

= 28A

2b. V

DD

= 25V, starting Tj = 25°C, L = 841µH RG = 25Ω, I

AS

= 28A

3. I

SD

≤ 28A, di/dt ≤ 17 0A/µs, VDD ≤ V

(BR)DSS

, T

j

≤ 150°C

4. Pulse with ≤ 300µs; duty cycle ≤ 2%