BAYLI 60N035T, 60N035S Datasheet

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

N-Channel Field Effect Transistor

60N035

Advance Information

Ordering Information

Device Package Temp.

60N035T TO-220

0 to 150°C

60N035S TO-263 ( D2 )

0 to 150°C

Absolute Maximum Rating

Symbol Parameter Max Unit

Drain Current
Continues

60

I

D

Pulsed 180

A

V

DSS

Drain-Source Voltage 30

V

V

GSV

Gate Source Voltage

±

20

V

Total Power Dissipation @ TC =25°C

50

W

P

D

Derate above 25°C

0.4

W/°°°°C

T

J

Operating and Storage

T

STG

Temperature Range

-65 to 175

°°°°C

Description

The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.

The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D

2

surface

mount power package with a power dissipation up to 2 Watts

Features

•

Critical DC Electrical parameters
specified at elevated Temp.

•

Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser

•

Super high density cell design for
extremely low R

DS(ON)

V

DSS

= 30V

R

DS (ON)

= 0.015 Ω

I

D

= 60A

Bay Linear

Bay LinearBay Linear

Bay Linear

Linear Excellenc e

Bay Linear, Inc

2478 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

60N035

Electrical Characteristics (

TC = 25°°°°C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERSTICS
BV

DSS

Drain source breakdown
voltage

V

GS

=0V, ID=250µA

30

V

I

DSS

Zero Gate Voltage Drain
Current

VDS=24V
V

GS

=0V

10

µµµµA

I

GBLF

Gate-Body Leakage Forward VGS=20V VDS=0V 100

nA

I

GBLR

Gate-Body Leakage Reverse VGS=20V VDS=0V -100

nA

ON CHARACTERSTICS
V

GS

Gate Threshold Voltage

V

DS=VGS

ID=250µA

1 3

V

R

DS(ON)

Static Drain Voltage

V

GS

=10V, ID=26A

V

CS

=4.5V, IO=21A

0.014

0.015

0.025

ΩΩΩΩ

I

D(ON)

ON-State Drain Current VGS=10V 60

A

g

fs

Forward Tran conductance

DYNAMIC CHARACTRISTICS
C

ISS

Input Capacitance 1500

pF

C

OSS

Output Capacitance 700

pF

C

RSS

Reverse Tras. Capacitance

V

DS

= 15V, VGS=0V
F=1.0 MHZ

300

pF
SWITCHING CHARACTERSTICS
t

D(ON)

Turn-ON Delay Time 60

t

r

Turn-ON Rise Time 200

t

d(off)

Turn-OFF Delay Time 50

t

F

Turn-OFF Fall Time

V

DD

=15V

I

D

=52A, VDS=10V

R

GEN

=25Ω

120

nS

SOURCE DRAIN DIODE CHRACTERISTICS
I

S

Maxim Continuous Drain source Diode Forward Current 60

A

V

DS

(note)

Drain Source Diode
Forward Votlage

V

GS

=0V

I

S

=26A

1.35

V

THERMAI CHRACTERISTICS
R

JC

Thermal Resistance, Junction to Case 2.5

°°°°C/W

R

JC

Thermal Resistance, Junction to Ambient 62.5

°°°°C/W

Note: Pulse Test: Pulse With≤ 300 µS, Duty Cycle ≤ 2.0%

Advance Information

-

These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,

computer simulations and/ or initial prototype evaluation.

Preliminary Information

-

These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are

subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.

The application circuit exa mples are only to explain the rep resentative a pplications of the devices and ar e not intended to gu arantee any circuit
design or permit an y in dustrial property righ t to other rights to execute. Bay Linear ta kes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.

LIFE SUPPORT AND NUCLEAR POLICY

Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility application s without
the specific written consent of Bay Linear President.