BAYLI 4N600T, 4N600S Datasheet
Bay Linear
Bay Linear
Bay LinearBay Linear
Inspire the Linear Power
Inspire the Linear Power
Inspire the Linear PowerInspire the Linear Power
N-Channel Field Effect Transistor
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
mount power package with a power dissipation up to 2 Watts
2
surface
4N600(3600)
Features
Critical DC Electrical parameters
•
specified at elevated Temp.
Rugged internal source-drain diode
•
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
•
extremely low R
DS(ON)
V
= 600V
DSS
R
DS (ON)
I
= 4.0A
D
= 1.9 Ω
Ordering Information
Device Package Temp.
4N600T TO-220
4N600S TO-263 ( D2 )
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol Parameter Max Unit
ID
I
V
P
T
T
D
GSV
D
J
STG
(T
(T
C
C
=25°C)
=100°C)
Drain Current
-Continues
-Pulsed 16
Gate Source Voltage
Total Power Dissipation @ TC =25°C
Derate above 25°C
Operating and Storage
Temperature Range
4.0
2.5
±
20
75
0.59
-55 to 150
A
V
W
W/°°°°C
°°°°C
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
4N600(3600)
Electrical Characteristics (
TC = 25°°°°C unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
V
=600V
I
DSS
V
V
GS(TH)
Zero Gate Voltage Drain Current
Drain-to-Source Breakdown I
Gate Threshold Voltage
DS
V
=0V
GS
=100µA, VGS=0 600 - -
D
V
DS=VGS
ID=250µA
100
2 4
µµµµA
V
V
R
DS(ON)
Static Drain Voltage VGS=10V, ID=2.4A - - 1.9
ΩΩΩΩ
I
GSS
g
fs
C
ISS
C
OSS
C
RSS
t
D(ON)
t
r
t
d(off)
t
F
I
S
V
DS
(note)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Tranconductance VDS=100V, ID =2.4A 2.9
Input Capacitance 800
Output Capacitance 110
Reverse Tras. Capacitance
Turn-ON Delay Time 12
Turn-ON Rise Time 18
Turn-OFF Delay Time 53
Turn-OFF Fall Time
Maxim Continuous Drain source Diode Forward Current 4.0
Drain Source Diode
Forward Voltage
VGS=20V
V
=-20V
GS
V
= 25V, VGS=0V
DS
F=1.0 MHZ
V
=2.4A, R
I
D
V
I
DD
R
D
=0V
GS
=4A
S
=300V
GEN
=74Ω
=12Ω
100
-100
20
19
1.50
NA
S
pF
pF
pF
NS
A
V
THERMAI CHRACTERISTICS
R
JC
R
JC
Thermal Resistance, Junction to Case 5
Thermal Resistance, Junction to Ambient 100
°°°°C/W
°°°°C/W
Note: Pulse Test: Pulse With≤ 300 µS, Duty Cycle ≤ 2.0%
-
Advance Information
computer simulations and/ or initial prototype evaluation.
These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
-
Preliminary Information
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
The application circuit examples are only to explain the representative applications of the devices an d are not intend ed to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibi lity for any problems rela ted to any
industrial property right resulting from the use of the contents shown in the data b ook. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applicatio ns without
the specific written consent of Bay Linear President.
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
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