AVAGO HSMS-285x DATA SHEET
HSMS-285x Series
SERIES
C
SINGLE
B
1 2
3
1 2
3
BRIDGE
QUAD
P
UNCONNECTED
TRIO
L
1 2 3
6 5 4
1 2 3
6 5 4
PLx
1
2
3
6
5
4
UNCONNECTED
PAIR
#5
SERIES
#2
SINGLE
#0
1 2
3
1 2
3 4
1 2
3
Surface Mount Zero Bias Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS-285x family of zero bias Schottky detector
diodes has been designed and optimized for use in small
signal (Pin <-20 dBm) applications at frequencies below
1.5 GHz. They are ideal for RF/ID and RF Tag applications
where primary (DC bias) power is not available.
Important Note: For detector applications with input
power levels greater than –20 dBm, use the HSMS-282x
series at frequencies below 4.0 GHz, and the HSMS-286x
series at frequencies above 4.0 GHz. The HSMS-285x
series IS NOT RECOMMENDED for these higher power
level applications.
Available in various package congurations, these detector diodes provide low cost solutions to a wide variety
of design problems. Avago’s manufacturing techniques
assure that when two diodes are mounted into a single
package, they are taken from adjacent sites on the wafer,
assuring the highest possible degree of match.
Pin Connections and Package Marking
Features
• Surface Mount SOT-23/SOT-143 Packages
• Miniature SOT-323 and SOT-363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
• Low Flicker Noise:
-162 dBV/Hz at 100 Hz
• Low FIT (Failure in Time) Rate*
• Tape and Reel Options Available
• Matched Diodes for Consistent Performance
• Better Thermal Conductivity for Higher Power
Dissipation
• Lead-free
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Notes:
1. Package marking provides orientation and identication.
2.
See “Electrical Specications” for appropriate package marking.
SOT-23 /SOT-143 Package Lead Code Identication (top view)
SOT-363 Package Lead Code Identication (top view)
SOT-323 Package Lead Code Identication (top view)
SOT-23/SOT-143 DC Electrical Specications, TC = +25°C, Single Diode
Maximum Maximum
Part Package Forward Reverse Typical
Number Marking Lead Voltage Leakage, Capacitance
HSMS- Code Code Conguration VF (mV) IR (µA) CT (pF)
2850 P0 0 Single 150 250 175 0.30
2852 P2 2 Series Pair
2855 P5 5 Unconnected Pair
Test IF = 0.1 mA IF = 1.0 mA VR=2V VR = –0.5 V to –1.0V
Conditions f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
[1,2]
[1,2]
SOT-323/SOT-363 DC Electrical Specications, TC = +25°C, Single Diode
Maximum Maximum
Part Package Forward Reverse Typical
Number Marking Lead Voltage Leakage, Capacitance
HSMS- Code Code Conguration VF (mV) IR (µA) CT (pF)
285B P0 B Single 150 250 175. 0.30
285C P2 C Series Pair
285L PL L Unconnected Trio
285P PP P Bridge Quad
Test IF = 0.1 mA IF = 1.0 mA VR=2V VR = 0.5 V to –1.0V
Conditions f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
RF Electrical Specications, TC = +25°C, Single Diode
Part Number Typical Tangential Sensitivity Typical Voltage Sensitivity Typical Video
HSMS- TSS (dBm) @ f = 915 MHz g (mV/µW) @ f = 915 MHz Resistance RV (KΩ)
2850 – 57 40 8.0
2852
2855
285B
285C
285L
285P
Test Video Bandwidth = 2 MHz Power in = –40 dBm
Conditions Zero Bias RL = 100 KΩ, Zero Bias Zero Bias
2
Absolute Maximum Ratings, TC = +25°C, Single Diode
C
j
R
j
R
S
Rj =
8.33 X 10-5 nT
Ib + I
s
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
RS = series resistance (see Table of SPICE parameters)
Cj = junction capacitance (see Table of SPICE parameters)
Symbol Parameter Unit Absolute Maximum
SOT-23/143 SOT-323/363
PIV Peak Inverse Voltage V 2.0 2.0
TJ Junction Temperature °C 150 150
T
Storage Temperature °C -65 to 150 -65 to 150
STG
TOP Operating Temperature °C -65 to 150 -65 to 150
θjc Thermal Resistance
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is dened to be the temperature at the package pins where contact is
made to the circuit board.
[2]
°C/W 500 150
[1]
ESD WARNING:
Handling Precautions Should Be Taken
To Avoid Static Discharge.
Equivalent Linear Circuit Model
HSMS-285x chip
SPICE Parameters
Parameter Units HSMS-285x
BV V 3.8
CJ0 pF 0.18
EG eV 0.69
IBV A 3 E - 4
IS A 3 E -6
N 1.06
RS Ω 25
PB (VJ) V 0.35
PT (XTI) 2
M 0.5
3
Typical Parameters, Single Diode
Figure 1. Typical Forward Current
vs. Forward Voltage.
Figure 2. +25°C Output Voltage vs.
Input Power at Zero Bias.
Figure 3. +25°C Expanded Output
Voltage vs. Input Power. See Figure 2.
Figure 4. Output Voltage vs.
Temperature.
I
F
– FORWARD CURRENT (mA)
0
0.01
VF – FORWARD VOLTAGE (V)
0.8 1.0
100
1
0.1
0.2 1.8
10
1.40.4 0.6 1.2 1.6
VOLTAGE OUT (mV)
-50
0.1
POWER IN (dBm)
-30 -20
10000
10
1
-40 0
100
-10
1000
RL = 100 KΩ
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
VOLTAGE OUT (mV)
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30
RL = 100 KΩ
915 MHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
OUTPUT VOLTAGE (mV)
0
0.9
TEMPERATURE (°C)
40 50
3.1
2.1
1.5
10 100
2.5
8020 30 70 9060
1.1
1.3
1.7
1.9
2.3
2.7
2.9
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
FREQUENCY = 2.45 GHz
PIN = -40 dBm
RL = 100 KΩ
4
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