AVAGO HSMS-282x DATA SHEET

HSMS-282x

COMMON

CATHODE

#4

UNCONNECTED

PAIR

#5

COMMON

ANODE

#3

SERIES

#2

SINGLE

#0

1 2

3

1 2

3 4

RING

QUAD

#7

1 2

3 4

BRIDGE

QUAD

#8

1 2

3 4

CROSS-OVER

QUAD

#9

1 2

3 4

1 2

3

1 2

3

1 2

3

COMMON

CATHODE

F

COMMON

ANODE

E

SERIES

C

SINGLE

B

COMMON

CATHODE QUAD

M

UNCONNECTED

TRIO

L

BRIDGE

QUAD

P

COMMON

ANODE QUAD

N

RING

QUAD

R

1 2 3

6 5 4

HIGH ISOLATION

UNCONNECTED PAIR

K

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

Surface Mount RF Schottky Barrier Diodes

Data Sheet

Description/Applications

These Schottky diodes are specically designed for both
analog and digital applications. This series oers a wide
range of specications and package congurations to give
the designer wide exibility. Typical applications of these
Schottky diodes are mixing, detecting, switching, sam‑
pling, clamping, and wave shaping. The HSMS‑282x series
of diodes is the best all‑around choice for most applica‑
tions, featuring low series resistance, low forward voltage
at all current levels and good RF characteristics.

Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.

Package Lead Code Identication,
SOT-23/SOT-143 (Top View)

Features

• Low Turn‑On Voltage (As Low as 0.34 V at 1 mA)

• Low FIT (Failure in Time) Rate*

• Six‑sigma Quality Level

• Single, Dual and Quad Versions

• Unique Congurations in Surface Mount SOT‑363

Package

– increase exibility

– save board space

– reduce cost

• HSMS‑282K Grounded Center Leads Provide up to 10
dB Higher Isolation

• Matched Diodes for Consistent Performance

• Better Thermal Conductivity for Higher Power Dissipation

• Lead‑free Option Available

• For more information see the Surface Mount Schottky

Reliability Data Sheet.

Package Lead Code Identication, SOT-363

Package Lead Code Identication, SOT-323

(Top View)

(Top View)

Pin Connections and Package Marking

GUx

1

2

3

6

5

4

Notes:

1. Package marking provides orientation and identication.

2. See “Electrical Specications” for appropriate package marking.

Absolute Maximum Ratings

[1]

TC = 25°C

Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363

If Forward Current (1 μs Pulse) Amp 1 1

PIV Peak Inverse Voltage V 15 15

Tj Junction Temperature °C 150 150

T

Storage Temperature °C ‑65 to 150 ‑65 to 150

stg

θjc Thermal Resistance

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. TC = +25°C, where TC is dened to be the temperature at the package pins where contact is made to the circuit board.

Electrical Specications TC = 25°C, Single Diode

[2]

°C/W 500 150

[3]

Maximum Maximum
Minimum Maximum Forward Reverse Typical
Part Package Breakdown Forward Voltage Leakage Maximum Dynamic
Number Marking Lead Voltage Voltage VF (V) @ IR (nA) @ Capacitance Resistance

[4]

HSMS

Code Code Conguration VBR (V) VF (mV) IF (mA) VR (V) CT (pF) RD (Ω)

2820 C0 0 Single 15 340 0.5 10 100 1 1.0 12
2822 C2 2 Series
2823 C3 3 Common Anode
2824 C4 4 Common Cathode
2825 C5 5 Unconnected Pair
2827 C7 7 Ring Quad
2828 C8 8 Bridge Quad

[4]

[4]

2829 C9 9 Cross‑over Quad
282B C0 B Single
282C C2 C Series
282E C3 E Common Anode
282F C4 F Common Cathode
282K CK K High Isolation
Unconnected Pair
282L CL L Unconnected Trio
282M HH M Common Cathode Quad
282N NN N Common Anode Quad
282P CP P Bridge Quad
282R OO R Ring Quad

Test Conditions IR = 100 mA IF = 1 mA

[1]

VR = 0V

[2]

I

f = 1 MHz

= 5 mA

F

[5]

Notes:

1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA.

2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum.

3. Eective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

4. See section titled “Quad Capacitance.”

5. RD = RS + 5.2Ω at 25°C and If = 5 mA.

2

Quad Capacitance

C

1

x C

2

C3 x C

4

C

DIAGONAL

= _______ + _______

C

1

+ C2 C3 + C

4

C

1

x C

2

C3 x C

4

C

DIAGONAL

= _______ + _______

C

1

+ C2 C3 + C

4

1

C

ADJACENT

= C1 + ____________

1 1 1

–– + –– + ––

C2 C3C

4

C

1

C

2

C

4

C

3

A

B

C

j

R

j

R

S

Rj =

8.33 X 10-5 nT
Ib + I

s

where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)

Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.

RS = series resistance (see Table of SPICE parameters)

Cj = junction capacitance (see Table of SPICE parameters)

Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument eectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago denes this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.

In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the gure below. The
diagonal capacitance is calculated using the following
formula

The equivalent adjacent capacitance is the capacitance
between points A and C in the gure below. This capaci‑
tance is calculated using the following formula

Linear Equivalent Circuit Model Diode Chip

ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.

This information does not apply to cross‑over quad di‑
odes.

3

SPICE Parameters

Parameter Units HSMS-282x

BV V 15

CJ0 pF 0.7

EG eV 0.69

IBV A 1E‑4

IS A 2.2E‑8

N 1.08

RS Ω 6.0

PB V 0.65

PT 2

M 0.5

Typical Performance, TC = 25°C (unless otherwise noted), Single Diode

Figure 1. Forward Current vs. Forward Voltage at
Temperatures.

0 0.10 0.20 0.30 0.500.40

I

F

– FORWARD CURRENT (mA)

VF – FORWARD VOLTAGE (V)

0.01

10

1

0.1

100

TA = +125C
TA = +75C
TA = +25C
TA = –25C

Figure 2. Reverse Current vs. Reverse Voltage at
Temperatures.

0 5 15

I

R

– REVERSE CURRENT (nA)

VR – REVERSE VOLTAGE (V)

10

1

1000

100

10

100,000

10,000

TA = +125C
TA = +75C
TA = +25C

Figure 3. Total Capacitance vs. Reverse Voltage.

0 2 86

C

T

– CAPACITANCE (pF)

VR – REVERSE VOLTAGE (V)

4

0

0.6

0.4

0.2

1

0.8

Figure 4. Dynamic Resistance vs. Forward
Current.

0.1 1 100

R

D

– DYNAMIC RESISTANCE ()

IF – FORWARD CURRENT (mA)

10

1

10

1000

100

VF - FORWARD VOLTAGE (V)

Figure 5. Typical Vf Match, Series Pairs and Quads
at Mixer Bias Levels.

30

10

1

0.3

30

10

1

0.3

I

F

- FORWARD CURRENT (mA)

V

F

- FORWARD VOLTAGE DIFFERENCE (mV)

0.2 0.4 0.6 0.8 1.0 1.2 1.4

IF (Left Scale)

VF (Right Scale)

VF - FORWARD VOLTAGE (V)

Figure 6. Typical Vf Match, Series Pairs at Detector
Bias Levels.

100

10

1

1.0

0.1

I

F

- FORWARD CURRENT (µA)

V

F

- FORWARD VOLTAGE DIFFERENCE (mV)

0.10 0.15 0.20 0.25

IF (Left Scale)

VF (Right Scale)

Figure 7. Typical Output Voltage vs. Input Power,
Small Signal Detector Operating at 850 MHz.

-40 -30

18 nH

RF in

3.3 nH
100 pF

100 K

HSMS-282B

Vo

0

V

O

– OUTPUT VOLTAGE (V)

Pin – INPUT POWER (dBm)

-10-20

0.001

0.01

1

0.1

-25C
+25C
+75C

DC bias = 3 A

Figure 8. Typical Output Voltage vs. Input Power,
Large Signal Detector Operating at 915 MHz.

-20 -10

RF in

100 pF

4.7 K

68

HSMS-282B

Vo

30

V

O

– OUTPUT VOLTAGE (V)

Pin – INPUT POWER (dBm)

10 200

1E-005

0.0001

0.001

10

0.1

1

0.01

+25C

LOCAL OSCILLATOR POWER (dBm)

Figure 9. Typical Conversion Loss vs. L.O. Drive,

2.0 GHz (Ref AN997).

CONVERSION LOSS (dB)

12

10

9

8

7

6

20 6 8 104

4

Applications Information

8.33 X 10-5 nT
Rj = –––––––––––– = RV– R

s

IS + I

b

0.026
≈ ––––– at 25 °C

IS + I

b

8.33 X 10-5 nT
Rj = –––––––––––– = RV– R

s

IS + I

b

0.026
≈ ––––– at 25 °C

IS + I

b

V - IR

S

I = IS (e

–––––

– 1)

0.026

R

S

R

j

C

j

METAL

SCHOTTKY JUNCTION

PASSIVATION PASSIVATION

N-TYPE OR P-TYPE EPI LAYER

N-TYPE OR P-TYPE SILICON SUBSTRATE

CROSS-SECTION OF SCHOTTKY

BARRIER DIODE CHIP

EQUIVALENT

CIRCUIT

Product Selection

Avago’s family of surface mount Schottky diodes provide
unique solutions to many design problems. Each is opti‑
mized for certain applications.

The rst step in choosing the right product is to select
the diode type. All of the products in the HSMS‑282x fam‑
ily use the same diode chip–they dier only in package
conguration. The same is true of the HSMS‑280x, ‑281x,
285x, ‑286x and ‑270x families. Each family has a dierent
set of characteristics, which can be compared most easily
by consulting the SPICE parameters given on each data
sheet.

The HSMS‑282x family has been optimized for use in RF
applications, such as

• DC biased small signal detectors to 1.5 GHz.

• Biased or unbiased large signal detectors (AGC or

power monitors) to 4 GHz.

• Mixers and frequencymultipliers to 6 GHz.

The other feature of the HSMS‑282x family is its unit‑to‑unit
and lot‑to‑lot consistency. The silicon chip used in this
series has been designed to use the fewest possible pro‑
cessing steps to minimize variations in diode characteris‑
tics. Statistical data on the consistency of this product, in
terms of SPICE parameters, is available from Avago.

where

n = ideality factor (see table of SPICE parameters)

T = temperature in °K

IS = saturation current (see table of SPICE parameters)

Ib = externally applied bias current in amps

Rv = sum of junction and series resistance, the slope of the

V‑I curve

IS is a function of diode barrier height, and can range from
picoamps for high barrier diodes to as much as 5 µA for
very low barrier diodes.

The Height of the Schottky Barrier

The current‑voltage characteristic of a Schottky barrier
diode at room temperature is described by the following
equation:

For those applications requiring very high breakdown
voltage, use the HSMS‑280x family of diodes. Turn to the
HSMS‑281x when you need very low icker noise. The
HSMS‑285x is a family of zero bias detector diodes for small
signal applications. For high frequency detector or mixer
applications, use the HSMS‑286x family. The HSMS‑270x
is a series of specialty diodes for ultra high speed clipping
and clamping in digital circuits.

Schottky Barrier Diode Characteristics

Stripped of its package, a Schottky barrier diode chip
consists of a metal‑semiconductor barrier formed by de‑
position of a metal layer on a semiconductor. The most
common of several dierent types, the passivated diode,
is shown in Figure 10, along with its equivalent circuit.

RS is the parasitic series resistance of the diode, the sum
of the bondwire and leadframe resistance, the resistance
of the bulk layer of silicon, etc. RF energy coupled into RS
is lost as heat—it does not contribute to the rectied out‑
put of the diode. CJ is parasitic junction capacitance of the
diode, controlled by the thick‑ness of the epitaxial layer
and the diameter of the Schottky contact. Rj is the junc‑
tion resistance of the diode, a function of the total current
owing through it.

5

On a semi‑log plot (as shown in the Avago catalog) the
current graph will be a straight line with inverse slope 2.3
X 0.026 = 0.060 volts per cycle (until the eect of RS is seen
in a curve that droops at high current). All Schottky diode
curves have the same slope, but not necessarily the same
value of current for a given voltage. This is determined
by the saturation current, IS, and is related to the barrier
height of the diode.

Through the choice of p‑type or n‑type silicon, and the
selection of metal, one can tailor the characteristics of a
Schottky diode. Barrier height will be altered, and at the
same time CJ and RS will be changed. In general, very low
barrier height diodes (with high values of IS, suitable for
zero bias applications) are realized on p‑type silicon. Such
diodes suer from higher values of RS than do the n‑type.

Figure 10. Schottky Diode Chip.