AVAGO HSMS-280x DATA SHEET

HSMS-280x

COMMON

CATHODE

#4

UNCONNECTED

PAIR

COMMON

ANODE

#3

SERIES

#2

SINGLE

#0

1 2

3

3 4

RING

QUAD

3 4

BRIDGE

QUAD

3 4

1 2

3

1 2

3

1 2

3

COMMON

CATHODE

#4

UNCONNECTED

PAIR

#5

COMMON

ANODE

#3

SERIES

#2

SINGLE

#0

1 2

3

1 2

3 4

BRIDGE

QUAD

#8

1 2

3 4

1 2

3

1 2

3

1 2

3

COMMON

CATHODE QUAD

M

UNCONNECTED

TRIO

L

BRIDGE

QUAD

P

COMMON

ANODE QUAD

N

RING

QUAD

R

1 2 3

6 5 4

HIGH ISOLATION

UNCONNECTED PAIR

K

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

Surface Mount RF Schottky Barrier Diodes

Data Sheet

Description/Applications

These Schottky diodes are specically designed for both
analog and digital applications. This series oers a wide

Features

• Surface Mount Packages

• High Breakdown Voltage

range of specications and package congurations to
give the designer wide exibility. The HSMS‑280x series
of diodes is optimized for high voltage applications.

Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent sites
on the wafer, assuring the highest degree of match.

• Low FIT (Failure in Time) Rate*

• Six‑sigma Quality Level

• Single, Dual and Quad Versions

• Tape and Reel Options Available

• Lead‑free

* For more information see the Surface Mount Schottky Reliability

Data Sheet.

Package Lead Code Identication, SOT-323 (Top View) Package Lead Code Identication, SOT-363 (Top View)

Package Lead Code Identication, SOT-23/SOT-143 (Top View)

Pin Connections and Package Marking, SOT-363

GUx

1

2

3

6

5

4

Notes:

1. Package marking provides orientation and identication.

2. See “Electrical Specications” for appropriate package marking.

ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.

Absolute Maximum Ratings

[1]

TC = 25°C

Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363

I

f

P

IV

T

j

T

stg

θ

jc

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. TC = +25°C, where TC is dened to be the temperature at the package pins where contact is made to the circuit board.

Electrical Specications TA = 25°C, Single Diode

Part
Number

[4]

HSMS

2800 A0 0 Single

2802 A2 2 Series

2803 A3 3 Common Anode

2804 A4 4 Common Cathode

2805 A5 5 Unconnected Pair

2808 A8 8 Bridge Quad

280B A0 B Single

280C A2 C Series

280E A3 E Common Anode

280F A4 F Common Cathode

280K AK K

280L AL L Unconnected Trio

280M H M Common Cathode Quad

280N N N Common Anode Quad

280P AP P Bridge Quad

280R O R Ring Quad

Test Conditions IR = 10 mA IF = 1 mA VF = 0 V

Notes:

1. DVF for diodes in pairs and quads in 15 mV maximum at 1 mA.

2. DCTO for diodes in pairs and quads is 0.2 pF maximum.

3. Eective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

4. See section titled “Quad Capacitance.”

5. RD = RS + 5.2 Ω at 25°C and If = 5 mA.

Forward Current (1 µs Pulse) Amp 1 1

Peak Inverse Voltage V Same as V

BR

Junction Temperature °C 150 150

Storage Temperature °C -65 to 150 -65 to 150

Thermal Resistance

[2]

°C/W 500 150

[3]

Package
Marking

Code

Lead
Code Conguration

High Isolation
Unconnected Pair

Minimum

Breakdown

Voltage

VBR (V)

[4]

70 410 1.0 @ 15 200 @ 50 2.0 35

Maximum

Forward

Voltage
VF (mV)

Maximum

Forward

Voltage

VF (V) @ IF (mA)

Maximum

Reverse

Leakage

IR (nA) @ VR (V)

Same as V

Maximum

Capacitance

CT (pF)

f = 1 MHz

BR

Typical

Dynamic

Resistance

[5]

RD (Ω)

IF = 5 mA

2

Quad Capacitance

C

1

C

2

C

4

C

3

A

B

C

j

R

j

R

S

Rj =

8.33 X 10-5 nT
Ib + I

s

where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)

Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.

RS = series resistance (see Table of SPICE parameters)

Cj = junction capacitance (see Table of SPICE parameters)

Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument eectively isolates
individual diode branches from the others, allowing
accurate capacitance measurement of each branch or
each diode. The conditions are: 20 mV R.M.S. voltage at 1
MHz. Avago denes this measurement as “CM”, and it is
equivalent to the capacitance of the diode by itself. The
equivalent diagonal and adjacent capacitances can then
be calculated by the formulas given below.

In a quad, the diagonal capacitance is the capacitance
between points A and B as shown in the gure below.
The diagonal capacitance is calculated using the follow‑
ing formula

C1 x C2 C3 x C

C

DIAGONAL

= _______ + _______

C1 + C2 C3 + C

4

4

The equivalent adjacent capacitance is the capacitance
between points A and C in the gure below. This capaci‑
tance is calculated using the following formula

1

C

ADJACENT

1 1 1

–– + –– + ––
C2 C3 C

= C1 + ____________

4

This information does not apply to cross‑over quad
diodes.

Linear Equivalent Circuit, Diode Chip

SPICE Parameters

Parameter Units HSMS-280x

B

V

C

J0

E

G

I

BV

I

S

N 1.08

R

S

P

B

P

T

M 0.5

V 75

pF 1.6

eV 0.69

A E‑5

A 3.00E‑08

Ω 30

V 0.65

2

3