AVAGO HSMP-382x, HSMP- 482x DATA SHEET
HSMP-382x, 482x
COMMON
CATHODE
#4
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
DUAL ANODE
HSMP-4820
DUAL ANODE
HSMP-482B
Surface Mount RF PIN Switch and Limiter Diodes
Data Sheet
Description/Applications
The HSMP-382x series is optimized for switching applications where ultra-low resistance is required. The
HSMP-482x diode is ideal for limiting and low inductance switching applications up to 1.5 GHz.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic, carrier
lifetime.
Package Lead Code Identication, SOT-23 (Top View)
Features
• Diodes Optimized for:
Low Current Switching
Low Distortion Attenuating
• Power Limiting/Circuit Protection
• Surface Mount SOT-23 and SOT-323 Packages
Single and Dual Versions
Tape and Reel Options Available
• Low Failure in Time (FIT) Rate
[1]
• Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability
Data Sheet.
Package Lead Code Identication, SOT-323 (Top View)
Absolute Maximum Ratings
[1]
TC = +25°C
Symbol Parameter Unit SOT-23 SOT-323
If Forward Current (1 µs Pulse) Amp 1 1
PIV Peak Inverse Voltage V 50
50
Tj Junction Temperature °C 150 150
T
Storage Temperature °C -65 to 150 -65 to 150
stg
θjc Thermal Resistance
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is dened to be the temperature at the package pins where contact is
made to the circuit board.
[2]
°C/W 500 150
Electrical Specications TC = 25°C
Package Minimum Maximum Maximum
Part Number Marking Lead Breakdown Series Resistance Total Capacitance
HSMP- Code Code Conguration Voltage VBR (V) RS (Ω) CT (pF)
3820 F0 0 Single 50 0.6 0.8
3822 F2 2 Series
3823 F3 3 Common Anode
3824 F4 4 Common Cathode
Test Conditions VR = V
BR
Measure IF = 10 mA VR = 20 V
IR ≤ 10 µA
f = 100 MHz f = 1 MHz
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Minimum Maximum Typical Maximum Typical
Part Package Breakdown Series Total Total Total
Number Marking Lead Voltage Resistance Capacitance Capacitance Inductance
HSMP- Code Code Conguration VBR (V) RS (Ω) CT (pF) CT (pF) LT (nH)
4820 FA A Dual Anode 50 0.6 0.75 1.0 1.0
482B FA A Dual Anode
Test Conditions VR = VBR IF = 10 mA f = 1 MHz f = 1 MHz f = 500 MHz–
Measure VR = 20 V VR = 0 V 3 GHz
IR ≤ 10 µA
Typical Parameters at TC = 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- RS (Ω) τ (ns) Trr (ns) CT (pF)
382x 1.5 70 7 0.60 @ 20 V
Test Conditions f = 100 MHz IF = 10 mA VR = 10 V
IF = 10 mA IF = 20 mA
90% Recovery
2
Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
100
10
1
0.1
RF RESISTANCE (OHMS)
IF – FORWARD BIAS CURRENT (mA)
0.01 0.1 1 10 100
1.4
1.2
1.0
0.8
0.6
0 10 20 30 40 50
VR – REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Figure 4. Capacitance vs. Reverse Voltage.
120
115
110
105
100
95
90
85
1 10 30
IF – FORWARD BIAS CURRENT (mA)
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current.
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
FORWARD CURRENT (mA)
Figure 2. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltages.
T
rr
– REVERSE RECOVERY TIME (ns)
1
10
100
10 20 30
VR = 2V
VR = 5V
VR = 10V
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (mA)
Figure 1. Forward Current vs. Forward Voltage.
125C
25C
–50C
CW POWER IN (dBm)
Figure 6. Large Signal Transfer Curve of the
HSMP-482x Limiter.
CW POWER OUT (dBm)
0
30
25
20
15
10
5
0
4010
5
20 25 30 3515
Measured with external
bias return
1.0 GHz
1.5 GHz
RF COMMON
RF 1
BIAS 1
RF 2
BIAS 2
RF COMMON
BIAS BIAS
RF 2
RF 1
Typical Applications for Multiple Diode Products
Figure 7. Simple SPDT Switch, Using Only Positive Current.
3
Figure 8. High Isolation SPDT Switch, Dual Bias.
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