AVAGO HSMP-389x, HSMP-489x DATA SHEET

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HSMP - 389x & HSMP - 489x Series

Surface Mount RF PIN Switch Diodes

Data Sheet

Description

The HSMP-389x series is optimized for switching ap­plications where low resistance at low current and low
capacitance are required. The HSMP-489x series products
feature ultra low parasitic inductance. These products are
specically designed for use at frequencies which are much
higher than the upper limit for conventional PIN diodes.

Pin Connections and Package Marking

Notes:

1. Package marking provides orientation, identication, and date
code.

2. See “Electrical Specications” for appropriate package marking.

Features

• Unique Congurations in Surface Mount Packages

– Add Flexibility

– Save Board Space

– Reduce Cost

• Switching

– Low Capacitance

– Low Resistance at Low Current

• Low Failure in Time (FIT) Rate

• Matched Diodes for Consistent Performance

• Better Th er mal Conductivity for Higher Power
Dissipation

• Lead-free Option Available

Note:

1. For more information see the Surface Mount PIN Reli­ability Data Sheet.

[1]

Package Lead Code Identication,

COMMON

CATHODE

#4

COMMON

ANODE

#3

SERIES

#2

SINGLE

#0

UNCONNECTED

PAIR

#5

DUAL ANODE

4890

COMMON

CATHODE

F

COMMON

ANODE

E

SERIES

C

SINGLE

B

DUAL ANODE

489B

SERIESÐ

SHUNT PAIR

LOW

INDUCTANCE

SINGLE

T

UNCONNECTED

TRIO

L

1 2 3

6 5 4

1 2 3

6 5 4

1 2 3

6 5 4

U

HIGH

FREQUENCY

SERIES

V

1 2 3

6 5 4

DUAL SWITCH

MODEL

R

1 2 3

6 5 4

SOT-23/143 (Top View)

Package Lead Code Identication,
SOT-323 (Top View)

Package Lead Code Identication,
SOT-363 (Top View)

ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.

Absolute Maximum Ratings

[1]

TC = +25°C

Symbol Parameter Unit SOT-23/143 SOT-323/363

If Forward Current (1 µs Pulse) Amp 1 1

P

IV

T

j

T

stg

θ

jc

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. TC = +25°C, where TC is dened to be the temperature at the package pins where contact is made to the circuit board.

Peak Inverse Voltage V 100 100

Junction Temperature °C 150 150

Storage Temperature °C -65 to 150 -65 to 150

Thermal Resistance

[2]

°C/W 500 150

2

Electrical Specications, TC = 25°C, each diode

Part Number
HSMP-

3890
3892
3893
3894
3895
389B
389C
389E
389F
389L
389R
389T
389U
389V

Package
Marking
Code

G0
G2
G3
G4
G5
G0
G2
G3
G4
GL
S
Z
GU
GV

Lead
Code

0
2
3
4
5
B
C
E
F
L
R
T
U
V

Conguration Minimum

Breakdown
Voltage VBR (V)

Single

100 2.5 0.30
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance
Single
Series-Shunt Pair
High Frequency
Series Pair

Test Conditions VR = V

Measure

IR ≤ 10 µA

BR

Maximum
Series Resistance
RS (Ω)

IF = 5 mA
f = 100 MHz

Maximum
Total Capacitance
CT (pF)

VR = 5 V
f = 1 MHz

High Frequency (Low Inductance, 500 MHz–3 GHz) PIN Diodes

Part
Number
HSMP-

489x GA Dual Anode 100 2.5 0.33 0.375 1.0

Test Conditions

Package
Marking

[1]

Code

Conguration Minimum

Breakdown
Voltage
VBR (V)

VR = V

BR

Measure
IR ≤ 10 µA

Maximum
Series
Resistance
RS (Ω)

Typical
Total
Capacitance
CT (pF)

IF = 5 mA f = 1 MHz

VR = 5 V

Maximum
Total
Capacitance
CT (pF)

VR = 5 V
f = 1 MHz

Typical Parameters at TC = 25°C

Part Number

HSMP-

389x 3.8 200 0.20 @ 5V

Test Conditions

Series Resistance

IF = 1 mA
f = 100 MHz

RS (Ω)

Carrier Lifetime

IF = 10 mA
IR = 6 mA

τ

(ns)

Total Capacitance

CT (pF)

Typical
Total
Inductance
LT (nH)

f=500 MHz–
3 GHz

3

HSMP-389x Series Typical Performance, TC = 25°C, each diode

1

123

405 6

b1 b2 b3

2

3

1

1 1

RF in

RF out

2

2

3

4 5 6

1
0
0

2

+V

-V

"ON"
"OFF"

Figure 1. Total RF Resistance at 25 C
vs. Forward Bias Current.

100

10

1

0.1

RF RESISTANCE (OHMS)

IF - FORWARD BIAS CURRENT (mA)

0.01 0.1 1 10 100

200

160

120

80

40

0

10 2015 25 30

T

rr

- REVERSE RECOVERY TIME (nS)

FORWARD CURRENT (mA)

Figure 4. Typical Reverse Recovery
Time vs. Reverse Voltage.

VR = - 2V

VR = - 5V

VR = - 10 V

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20
04 8 1 2 16 2 0

V

R

- REVERSE VOLTAGE (V)

TOTAL CAPACITANCE (pF)

1 MHz

1 GHz

Figure 2. Capacitance vs. Reverse
Voltage.

100

10

1

0.1

0.01

0 0.2 0.4 0.6 0.8 1.0 1.2

I

F

- FORWARD CURRENT (mA)

VF - FORWARD VOLTAGE (V)

Figure 5. Forward Current vs. Forward
Voltage.

125˚ C

25˚C

- 50˚C

120

115

110

105

100

95

90

85

11 0 30

IF - FORWARD BIAS CURRENT (mA)

Figure 3. 2nd Harmonic Input Intercept
Point vs. Forward Bias Current.

INPUT INTERCEPT POINT (dBm)

Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz

Typical Applications for Multiple Diode Products

Figure 6. HSMP-389L used in a SP3T Switch. Figure 7. HSMP-389L Unconnected Trio used in a Dual Volt-

4

age, High Isolation Switch.