Avago HSMP-3820, HSMP-3822, HSMP-3823, HSMP-3824, HSMP-4820 Schematic [ru]
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HSMP-382x, 482x
Surface Mount RF PIN Switch and Limiter Diodes
Data Sheet
Description/Applications
The HSMP-382x series is optimized for switching applications where ultra-low resistance is required. The
HSMP-482x diode is ideal for limiting and low inductance switching applications up to 1.5 GHz.
A SPICE model is not available for PIN diodes as
SPICE does not provide for a key PIN diode characteristic, carrier lifetime.
Package Lead Code Identification, SOT-323
(Top View)
DUAL ANODE
HSMP-482B
Package Lead Code Identification, SOT-23
(Top View)
SINGLE
SERIES
Features
• Diodes Optimized for:
Low Current Switching
Low Distortion Attenuating
• Power Limiting /Circuit Protection
• Surface Mount SOT-23 and SOT-323 Packages
Single and Dual Versions
Tape and Reel Options Available
• Low Failure in Time (FIT) Rate
• Lead-free Option Available
Note:
1. For more information see the Surface Mount PIN Reliability
Data Sheet.
[1]
#0
COMMON
ANODE
#3
DUAL ANODE
HSMP-4820
#2
COMMON
CATHODE
#4
2
Absolute Maximum Ratings
[1]
TC = +25°C
Symbol Parameter Unit SOT-23 SOT-323
I
Forward Current (1 µs Pulse) Amp 1 1
f
P
Peak Inverse Voltage V 50 50
IV
T
Junction Temperature °C 150 150
j
T
Storage Temperature °C -65 to 150 -65 to 150
stg
θ
Thermal Resistance
jc
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made
to the circuit board.
Electrical Specifications TC = 25°C
Package Minimum Maximum Maximum
Part Number Marking Lead Breakdown Series Resistance Total Capacitance
HSMP- Code Code Configuration Voltage V
3820 F0 0 Single 50 0.6 0.8
3822 F2 2 Series
3823 F3 3 Common Anode
3824 F4 4 Common Cathode
Test Conditions V
(V) RS (Ω)C
BR
= V
R
Measure
≤ 10 µA
I
R
BR
f = 100 MHz f = 1 MHz
IF = 10 mA V
(pF)
T
= 20 V
R
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Part Package Breakdown Series Total Total Total
Number Marking Lead Voltage Resistance Capacitance Capacitance Inductance
HSMP- Code Code Configuration VBR (V) RS (Ω)C
4820 FA A Dual Anode 50 0.6 0.75 1.0 1.0
482B FA A Dual Anode
Test Conditions VR = V
Minimum Maximum Typical Maximum Typical
(pF) CT (pF) LT (nH)
T
BR
Measure VR = 20 V VR = 0 V 3 GHz
IF = 10 mA f = 1 MHz f = 1 MHz f = 500 MHz–
IR ≤ 10 µA
Typical Parameters at TC = 25°C
Part Number Series Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- R
382x 1.5 70 7 0.60 @ 20 V
Test Conditions f = 100 MHz I
(Ω) τ (ns) Trr (ns) CT (pF)
S
= 10 mA VR = 10 V
I
= 10 mA IF = 20 mA
F
F
90% Recovery
Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode
3
100
10
1
0.1
– FORWARD CURRENT (mA)
F
I
0.01
125°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VF – FORWARD VOLTAGE (mA)
25°C
–50°C
Figure 1. Forward Current vs.
Forward Voltage.
1.4
1.2
1.0
CAPACITANCE (pF)
0.8
0.6
0 1020304050
– REVERSE VOLTAGE (V)
V
R
Figure 4. Capacitance vs. Reverse
Voltage.
100
= 2V
V
R
V
= 5V
R
10
– REVERSE RECOVERY TIME (ns)
rr
T
1
10 20 30
FORWARD CURRENT (mA)
V
= 10V
R
Figure 2. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages.
120
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
INPUT INTERCEPT POINT (dBm)
85
11030
IF – FORWARD BIAS CURRENT (mA)
Figure 5. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current.
100
10
1
RF RESISTANCE (OHMS)
0.1
0.01 0.1 1 10 100
IF – FORWARD BIAS CURRENT (mA)
Figure 3. RF Resistance at 25°C vs.
Forward Bias Current.
30
25
20
15
10
CW POWER OUT (dBm)
5
Measured with external
bias return
0
0
5
CW POWER IN (dBm)
1.5 GHz
1.0 GHz
20 25 30 3515
4010
Figure 6. Large Signal Transfer Curve
of the HSMP-482x Limiter.
Typical Applications for Multiple Diode Products
RF COMMON
RF 1
BIAS 1
Figure 7. Simple SPDT Switch, Using Only Positive
Current.
RF 2
BIAS 2
RF COMMON
RF 1
RF 2
BIAS BIAS
Figure 8. High Isolation SPDT Switch, Dual Bias.
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