Avago AT-30511, AT-30533 Schematic [ru]

AT-30511, AT-30533

BASE EMITTER

EMITTER COLLECTO

R

BASE EMITTER

COLLECTOR

305x

305x

SOT-23 (AT-30533)

SOT-143 (AT-30511)

Low Current, High Performance NPN
Silicon Bipolar Transistors

Data Sheet

Description

Avago’s AT-30511 and AT-30533 are high performance
NPN bipolar transistors that have been optimized for
maximum fT at low voltage operation, making them ideal
for use in battery powered applications in wireless mar­kets. The AT-30533 uses the 3 lead SOT-23, while the AT­30511 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.

The 3.2 micron emitter-to-emitter pitch and reduced para­sitic design of these transistors yields extremely high per­formance products that can perform a multiplicity of tasks.
The 5 emitter nger interdigitated geometry yields an ex­tremely fast transistor with high gain and low operating
currents.

Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery op­erated systems as an LNA, gain stage, buer, oscillator, or
active mixer. Typical amplier designs at 900 MHz yield

1.3 dB noise gures with 13 dB or more associated gain at
a 2.7 V, 1 mA bias. Voltage breakdowns are high enough
for use at 5 volts. High gain capability at 1 V, 1 mA makes
these devices a good t for 900 MHz pager applications.

Features

• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation

• 900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB GA
AT-30533: 1.1 dB NF, 13 dB G

• Characterized for End-Of-Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT Plastic Packages

• Tape-And-Reel Packaging Option Available

• Lead-free

A

Pin Connections and Package Marking

The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz f
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni­formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.

MAX

Notes:
Top View. Package Marking provides orientation and identication.
"x" is the date code.

AT-30511, AT-30533 Absolute Maximum Ratings

1000 pF

V

BB

W = 10 L = 1860

W = 10 L = 1000

W = 30 L = 100

W = 30 L = 100

W = 10 L = 1860

1000 pF

V

CC

25 Ω

W = 10 L = 1025

TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2

NOT TO SCALE

TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)

DIMENSIONS IN MILS

Symbol Parameter Units Absolute Maximum

V
V
V
IC Collector Current mA 8
PT Power Dissipation
Tj Junction Temperature °C 150
T

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. T

3. Derate at 1.82 mW/°C for TC > 95°C.

Emitter-Base Voltage V 1.5

EBO

Collector-Base Voltage V 11

CBO

Collector-Emitter Voltage V 5.5

CEO

[2] [3]

mW 100

Storage Temperature °C -65 to 150

STG

Mounting Surface

= 25°C.

[1]

Thermal Resistance

[2]

:

θjc = 550°C/W

Electrical Specications, TA = 25°C

AT-30511 AT-30533

Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max

NF Noise Figure
VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 1.1

GA Associated Gain
VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 14

[1]

hFE Forward Current VCE = 2.7 V - 70 300 70 300
Transfer Ratio IC = 1 mA

I

I

Notes:

1. Test circuit B, Figure 1. Numbers reect device performance de-embedded from circuit losses.

2. Test circuit A, Figure 1. Numbers reect device performance de-embedded from circuit losses.

Collector Cuto Current VCB = 3 V µA 0.03 0.2 0.03 0.2

CBO

Emitter Cuto Current VEB = 1 V µA 0.1 1.5 0.1 1.5

EBO

Input loss = 0.4 dB; output loss = 0.4 dB.

Input loss = 0.4 dB; output loss = 0.4 dB.

16

[1]

[1]

[1]

1.4

1.1

11

[2]

13

[2]

1.4

[2]

[2]

Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise
Figure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305
and AT-310 Geometries.

2

AT-30511, AT-30533 Characterization Information, TA = 25°C

P 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

10

4

2

0.5 2.5

6

2.0

8

5 mA

2 mA

G 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

2 mA

G 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

2 mA

NOISE FIGURE (dB)

0

0

FREQUENCY (GHz)

1.0 1.5

2.5

1.0

0.5

0.5 2.5

1.5

2.0

2.0

1 mA
5 mA

AMPLIFIER NF

NF MIN.

Ga (dB)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

1 mA

Ga (dB)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2

20

5 mA

1 mA

AT-30511 AT-30533

Symbol Parameters and Test Conditions Units Typ Typ

P
VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dBm 7 7

G
VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 16.5 15

IP3 Output Third Order Intercept Point,
VCE = 2.7 V, IC = 5 mA (opt tuning) f = 0.9 GHz dBm 17 17

|S21|

CCB Collector-Base Capacitance VCB = 3V, f = 1 MHz pF 0.04 0.04

Power at 1 dB Gain Compression (opt tuning)

1dB

Gain at 1 dB Gain Compression (opt tuning)

1dB

2

Gain in 50 Ω System; VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 10 9

E

Typical Performance

Figure 2. AT-30511 and AT-30533 Minimum Noise
Figure and Amplier NF

[1]

vs. Frequency and Current

Figure 3. AT-30511 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.

Figure 4. AT-30533 Associated Gain at Optimum Noise
Match vs. Frequency and Current at VCE = 2.7 V.

at VCE = 2.7 V.

Figure 5. AT-30511 and AT-30533 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 2.7 V.

Note:

1. Amplier NF represents the noise gure which can be expected in a real circuit representing reasonable reection coecients and including

Figure 6. AT-30511 1 dB Compressed Gain vs. Frequen­cy and Current at VCE = 2.7 V.

Figure 7. AT-30533 1 dB Compressed Gain vs. Frequen­cy and Current at VCE = 2.7 V.

circuit losses.

3

P 1dB (dBm)

0

-4

FREQUENCY (GHz)

1.0 1.5

6

0

-2

0.5 2.5

2

2.0

4

2 mA

5 mA

G 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

2 mA

AT-30511, AT-30533 Typical Performance, continued

P 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

10

4

2

0.5 2.5

6

2.0

8

2 mA

5 mA

G 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

2 mA

G 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

2 mA

Ga (dBm)

-50

0

TEMPERATURE (°C)

50

25

10

5

0 100

15

20

0

2.5

1.0

0.5

1.5

2.0

NOISE FIGURE (dB)

Ga

NF

Ga (dBm)

-50

0

TEMPERATURE (°C)

50

25

10

5

0 100

15

20

0

2.5

1.0

0.5

1.5

2.0

NOISE FIGURE (dB)

Ga

NF

IM3 (dBc)

-9

-80

POWER PER TONE (dBm)

-3 0

0

-60

-6 6

-40

3

-20

IM3 (dBc)
IM5 (dBc)
IM7 (dBc)

G 1dB (dBm)

0

0

FREQUENCY (GHz)

1.0 1.5

25

10

5

0.5 2.5

15

2.0

20

5 mA

2 mA

Figure 8. AT-30511 and AT-30533 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 5 V.

Figure 11. AT-30511 and AT-30533 Power at 1 dB Gain
Compression vs. Frequency and Current at VCE = 1 V.

Figure 9. AT-30511 1 dB Compressed Gain vs. Frequen­cy and Current at VCE = 5 V.

Figure 12. AT-30511 1 dB Compressed Gain vs. Fre­quency and Current at VCE = 1 V.

Figure 10. AT-30533 1 dB Compressed Gain vs. Fre­quency and Current at VCE = 5 V.

Figure 13. AT-30533 1 dB Compressed Gain vs. Fre­quency and Current at VCE = 1 V.

Figure 14. AT-30511 Noise Figure and Associated Gain
at VCE = 2.7 V, IC = 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses
De-embedded)

4

Figure 15. AT-30533 Noise Figure and Associated Gain
at VCE = 2.7 V, IC = 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses
De-embedded)

Figure 16. AT-30511 and AT-30533 Intermodulation
Products vs. Output Power at VCE = 2.7 V, IC = 10 mA,
900 MHz with Optimal Tuning.