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SSeemmiiccoonndduuccttoor
r
STS9014
NPN Silicon Transistor
Description
• General purpose application
• Switching application
Features
• Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.)
• Low noise : NF=10dB(Max.) at f=1KHz
• Complementary pair with STS9015
Ordering Information
Type NO. Marking Package Code
STS9014 STS9014 TO-92
Outline Dimensions unit :
mm
0.1
±
4.5
0.40
±
14.0
4.5±0.1
1 2 3
0.4±0.02
1.27 Typ
2.54 Typ
3.45±0.1
2.25±0.1
2.06±0.1
.
.
0.1
±
1.20
KST-9017-000
0.38
PIN Connections
1. Emitter
2. Base
3. Collector
1
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STS9014
Absolute maximum ratings
Characteristic Symbol Ratings Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Base voltage V
Collector current I
Emitter current I
Collector dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
E
C
j
stg
60 V
50 V
5V
150 mA
-150 mA
625 mW
150
-55~150
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector cut-off current I
Emitter cut-off c urrent I
DC current gain
Collector-Emitter saturation voltage V
Transistion frequency f
Collector output capa c itance C
Noise figure NF
CBO
EBO
h
FE
CE(sat)
* : hFE rank / B : 100 ~ 300, C : 200 ~ 600, D : 400 ~ 1000.
VCB=50V, IE=0 - - 50 nA
VEB=5V, IC=0 - - 100 nA
*
VCE=5V, IC=1mA 100 - 1000 IC=100mA, IB=10mA - 0.1 0.25 V
VCE=10V, IC=1mA 60 - - MHz
T
VCB=10V, IE=0, f=1MHz - 2 3.5 pF
ob
=6V, IC=0.1mA,
V
CB
f=1KHz, Rg=10K
Ω
--10dB
(Ta=25
°
C
°
C
(Ta=25
C)
°°°°
C)
°°°°
KST-9017-000
2
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Electrical Characteristic Curves
STS9014
Fig. 1 PC –T
Fig. 3 IC -V
CE
a
Fig. 2 IC -V
Fig. 4 h
BE
5
FE -IC
Fig. 5 V
KST-9017-000
CE(sat) -IC
3
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