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SSeemmiiccoonndduuccttoorr
STS9013
NPN Silicon Transistor
Descriptions
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity.
• Complementary pair with STS9012
Ordering Information
Type NO. Marking Package Code
STS9013 STS9013 TO-92
Outline Dimensions unit :
mm
0.1
±
4.5
0.40
±
14.0
4.5±0.1
1 2 3
0.4±0.02
1.27 Typ
2.54 Typ
.
.
3.45±0.1
2.25±0.1
2.06±0.1
KST-9016-000 1
0.1
±
1.20
0.38
PIN Connections
1. Emitter
2. Base
3. Collector
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STS9013
Absolute maximum ratings
(Ta=25
C)
°°°°
Characteristic Symbol Ratings Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Base voltage V
Collector current IC 500 mA
Emitter current IE -500 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150 °C
Storage temperature T
Electrical Characteristics
40 V
CBO
30 V
CEO
5 V
EBO
-55~150 °C
stg
(Ta=25
C)
°°°°
Characteristic Symbol Test Condition Min. Typ. Max. Unit
A
Collector cut-off current I
Emitter cut-off c urrent I
DC current gain
Collector-Emitter satu ration voltage V
Base-Emitter volta g e VBE IC=100mA, VCE=1V - 0.8 1 V
Transition frequency fT VCE=6V, IC=20mA 140 - - MHz
Collector output capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
VCB=35, IE=0 - - 0.1
CBO
VEB=5V, IC=0 - - 0.1
EBO
*
h
FE
CE(sat)
VCE=1V, IC=50mA 96 - 246 -
IC=100mA, IB=10mA - 0.1 0.25 V
µ
A
µ
* : hFE Rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246.
KST-9016-000 2
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STS9013
Electrical Characteristic Curves
Fig. 1 Pc - Ta
Fig. 3 I
- V
C
CE
Fig. 2 I
Fig. 4 V
- VBE
C
CE(SAT)
- I
C
Fig. 5 hFE - IC
KST-9016-000 3
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