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查询BC817F供应商
SSeemmiiccoonndduuccttoor
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BC817F
NPN Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary pair with BC807F
Ordering Information
Type NO. Marking Package Code
BC817F NA
: hFE rank
SOT-23F
Outline Dimensions unit :
mm
2.4±0.1
1.6±0.1
1
0.1
±
1.90 BSC
2.9
2
0~0.1
3
0.05
±
0.4
0.05
±
0.15
PIN Connections
1. Base
0.1
±
0.9
2. Emitter
3. Collector
KST-2087-000
1
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BC817F
Absolute maximum ratings
Characteristic Symbol Ratings Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Base voltage V
Collector current I
Collector dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
50 V
35 V
5V
800 mA
200 mW
150
-55~150
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter brea kdown voltage BV
Base-Emitter tur n on voltage V
Collector-Emitter saturation voltage V
Collector cut-off current I
DC current gain
Transition frequency f
Collector output capa c itance C
BE(ON)
CE(sat)
CBO
h
FE
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
CEO
T
ob
IC=1mA, IE=0 35 - - V
VCE=1V, IC=300mA - - 1.2 V
IC=500mA, IB=50mA - - 700 mV
VCB=25V, IE=0 - - 100 nA
*
VCE=1V, IC=100mA 100 - 630 VCB=5V, IC=10mA - 100 - MHz
VCB=10V, IE=0, f=1MHz - 16 - pF
(Ta=25
°
C
°
C
(Ta=25
C)
°°°°
C)
°°°°
KST-2087-000
2
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Electrical Characteristic Curves
BC817F
Fig. 1 P
Fig. 3 I
- T
C
C - VCE
a
Fig. 2 I
C - VBE
Fig. 4 V
CE(sat) - IC
2SC5344SF
Fig. 5 h
KST-2087-000
FE
- I
C
3
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