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查询BC807F供应商
SSeemmiiccoonndduuccttoor
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BC807F
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary Pair with BC817F
Ordering Information
Type NO. Marking Package Code0
BC807F LA
:
h
rank
FE
SOT-23F
Outline Dimensions unit :
mm
2.4±0.1
1.6±0.1
1
0.1
±
1.90 BSC
2.9
2
0~0.1
3
0.05
±
0.4
0.05
±
0.15
PIN Connections
0.1
±
0.9
1. Base
2. Emitter
3. Collector
KST-2085-000
1
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BC807F
Absolute maximum ratings
Characteristic Symbol Ratings Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-base voltage V
Collector current I
Collector dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
stg
-50 V
-35 V
-5 V
-800 mA
200 mW
150
-55~150
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter brea kdown voltage BV
Base-Emitter tur n on voltage V
Collector-Emitter saturation voltage V
Collector cut-off current I
DC current gain
Transition frequency f
Collector output capa c itance C
BE(ON)
CE(sat)IC
CBO
h
FE
* : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
IC=-1mA, IB=0 -35 - - V
CEO
VCE=-1V, IC=-300mA - - -1.2 V
=-500mA, IB=-50mA - - -700 mV
VCB=-25V, IE=0 - - -100 nA
*
VCE=-1V, IC=-100mA 100 - 630 VCB=-5V, IE=10mA
T
f=100MHz
VCB=-10V, IE=0, f=1MHz - 16 - pF
ob
- 100 - MHz
(Ta=25
°
C
°
C
(Ta=25
C)
°°°°
C)
°°°°
KST-2085-000
2
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Electrical Characteristic Curves
BC807F
Fig. 1 Pc-Ta
Fig. 3 IC - V
CE
Fig. 2 IC -V
Fig. 4 h
BE
- I
FE
C
Fig. 5 V
KST-2085-000
CE (sat)
- I
C
3
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