• Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers
Description
The AT93C46D provides 1024 bits of serial electrically erasable programmable readonly memory (EEPROM), organized as 64 words of 16 bits each (when the ORG pin is
connected to VCC), and 128 words of 8 bits each (when the ORG pin is tied to
ground). The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The AT93C46D is
available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin miniMAP (MLP 2x3), 8-lead TSSOP, and 8-lead dBGA2 packages.
The AT93C46D is enabled through the Chip Select pin (CS) and accessed via a
three-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift
Clock (SK). Upon receiving a Read instruction at DI, the address is decoded and the
data is clocked out serially on the DO pin. The Write cycle is completely self-timed,
and no separate Erase cycle is required before Write. The Write cycle is only enabled
when the part is in the Erase/Write Enable state. When CS is brought high following
the initiation of a Write cycle, the DO pin outputs the Ready/Busy status of the part.
Three-wire
Serial
EEPROM
1K (128 x 8 or 64 x 16)
AT93C46D
Preliminary
The AT93C46D is available in 1.8 (1.8V to 5.5V) version.
Table 0-1.Pin Configurations
Pin NameFunction
CSChip Select
SKSerial Data Clock
DISerial Data Input
DOSerial Data Output
GNDGround
VCCPower Supply
ORGInternal Organization
NCNo Connect
CS
SK
DI
DO
CS
SK
DI
DO
8-lead SOIC
1
2
3
4
8-lead PDIP
1
2
3
4
CS
SK
DI
DO
8
7
6
5
8
7
6
5
8-lead dBGA2
8
VCC
NC
ORG
GND
VCC
NC
ORG
GND
8-lead TSSOP
1
2
3
4
VCC
7
NC
6
ORG
5
GND
Bottom View
8-lead Ultra Thin mini-MAP (MLP 2x3)
8
VCC
7
NC
6
ORG
5
GND
Bottom View
VCC
8
NC
7
ORG
6
GND
5
1
CS
2
SK
3
D1
4
D0
1
CS
2
SK
3
DI
4
DO
5193E–SEEPR–11/07
1.Absolute Maximum Ratings*
Operating Temperature......................................−55°C to +125°C
Storage Temperature .........................................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground........................................ −1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1-1.Block Diagram
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Notes:1. When the ORG pin is connected to VCC, the “x 16” organization is selected. When it is con-
nected to ground, the “x 8” organization is selected. If the ORG pin is left unconnected and the
application does not load the input beyond the capability of the internal 1 Meg ohm pullup, then
the “x 16” organization is selected.
2. For the AT93C46D, if the “x 16” organization is the mode of choice and pin 6 (ORG) is left
unconnected, Atmel
AT93C46E datasheet.
2
AT93C46D [Preliminary]
®
recommends using AT93C46E device. For more details, see the
5193E–SEEPR–11/07
AT93C46D [Preliminary]
Table 1-1.Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V (unless otherwise noted)
SymbolTest ConditionsMaxUnitsConditions
C
OUT
C
IN
Output Capacitance (DO)5pFV
OUT
= 0V
Input Capacitance (CS, SK, DI)5pFVIN = 0V
Note:1. This parameter is characterized and is not 100% tested.
Table 1-2.DC Characteristics
Applicable over recommended operating range from: T
SymbolParameterTest ConditionMinTypMaxUnit
V
CC1
V
CC2
V
CC3
I
CC
I
SB1
I
SB2
I
SB3
I
IL
I
OL
(1)
V
IL1
(1)
V
IH1
(1)
V
IL2
(1)
V
IH2
V
OL1
V
OH1
V
OL2
V
OH2
Note:1. VIL min and VIH max are reference only and are not tested.
Supply Voltage1.85.5V
Supply Voltage2.75.5V
Supply Voltage4.55.5V
Supply CurrentVCC = 5.0V
Standby CurrentVCC = 1.8VCS = 0V0.41.0µA
Standby CurrentVCC = 2.7VCS = 0V6.010.0µA
Standby CurrentVCC = 5.0VCS = 0V10.015.0µA
Input LeakageVIN = 0V to VCC 0.11.0µA
Output LeakageVIN = 0V to VCC 0.11.0µA
Input Low Voltage
2.7V ≤ V
Input High Voltage2.0VCC + 1
Input Low Voltage
1.8V ≤ V
Input High VoltageVCC x 0.7VCC + 1
Output Low Voltage
2.7V ≤ VCC ≤ 5.5V
Output High VoltageIOH = −0.4 mA2.4V
Output Low Voltage
Output High VoltageIOH = −100 µAV
1.8V ≤ V
≤ 2.7V
CC
= −40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
AI
READ at 1.0 MHz0.52.0mA
WRITE at 1.0 MHz0.52.0mA
−0.60.8
≤ 5.5V
CC
≤ 2.7V
−0.6V
CC
IOL = 2.1 mA0.4V
I
= 0.15 mA0.2V
OL
– 0.2V
CC
CC
x 0.3
V
V
5193E–SEEPR–11/07
3
Table 1-3.AC Characteristics
Applicable over recommended operating range from T
Note:1. This parameter is ensured by characterization.
4.5V ≤ V
2.7V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
1.8V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
1.8V ≤ V
1.8V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V0.13ms
CC
0
0
0
250
250
1000
250
250
1000
250
250
1000
50
50
200
100
100
400
100
100
400
2
1
0.25
250
250
1000
250
250
1000
250
250
1000
100
150
400
5ms
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
AT93C46D [Preliminary]
5193E–SEEPR–11/07
Table 1-4.Instruction Set for the AT93C46D
AT93C46D [Preliminary]
Op
InstructionSB
Code
READ110A6 – A
EWEN10011XXXXX11XXXX
ERASE111A6 – A
WRITE101A6 – A
ERAL10010XXXXX10XXXX
WRAL10001XXXXX01XXXXD7 – D
AddressData
0
0
0
A5 – A
A5 – A
A5 – A
0
0
0
D7 – D
0
0
Commentsx 8x 16x 8x 16
Reads data stored in memory, at
specified address
Write enable must precede all
programming modes
Erases memory location An – A
D
15
– D
Writes memory location An – A
0
0
0
Erases all memory locations. Valid
only at V
D
– D
15
Writes all memory locations. Valid
0
only at VCC = 4.5V to 5.5V
= 4.5V to 5.5V
CC
EWDS10000XXXXX00XXXXDisables all programming instructions
Note:The Xs in the address field represent DON’T CARE values and must be clocked.
2.Functional Description
The AT93C46D is accessed via a simple and versatile three-wire serial communication interface. Device operation is controlled by seven instructions issued by the host processor. A validinstruction starts with a rising edge of CS and consists of a start bit (logic “1”) followed by the
appropriate op code and the desired memory address location.
READ (READ): The Read (READ) instruction contains the address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory
location is available at the serial output pin DO. Output data changes are synchronized with the
rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”) precedes the 8- or
16-bit data output string.
ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes into the
Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN)
instruction must be executed first before any programming instructions can be carried out.
Please note that once in the EWEN state, programming remains enabled until an EWDS instruction is executed or V
power is removed from the part.
CC
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory
location to the logical “1” state. The self-timed erase cycle starts once the Erase instruction and
address are decoded. The DO pin outputs the Ready/Busy status of the part if CS is brought
high after being kept low for a minimum of 250 ns (t
). A logic “1” at pin DO indicates that the
CS
selected memory location has been erased and the part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written
into the specified memory location. The self-timed programming cycle t
starts after the last bit
WP
of data is received at serial data input pin DI. The DO pin outputs the Read/Busy status of the
part if CS is brought high after being kept low for a minimum of 250 ns (t
). A logic “0” at DO
CS
indicates that programming is still in progress. A logic “1” indicates that the memory location at
the specified address has been written with the data pattern contained in the instruction and the
5193E–SEEPR–11/07
5
part is ready for further instructions. A Ready/Busy status cannot be obtained if the CS is
brought high after the end of the self-timed programming cycle tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array
to the logic “1” state and is primarily used for testing purposes. The DO pin outputs the
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns
(t
). The ERAL instruction is valid only at VCC = 5.0V ± 10%.
CS
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the
data patterns specified in the instruction. The DO pin outputs the Ready/Busy status of the part if
CS is brought high after being kept low for a minimum of 250 ns (t
valid only at V
= 5.0V ± 10%.
CC
). The WRAL instruction is
CS
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write
Disable (EWDS) instruction disables all programming modes and should be executed after all
programming operations. The operation of the Read instruction is independent of both the
EWEN and EWDS instructions and can be executed at any time.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, and dBGA2 = 5K per reel.
3. Available in tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request.
Please contact Serial Interface Marketing.
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
5193E–SEEPR–11/07
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusionsand gate burrsshall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusionsshall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
2325 Orchard Parkway
R
San Jose, CA 95131
not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
DRAWING NO.
8A2
5/30/02
REV.
B
17
8U3-1 – dBGA2
E
PIN 1 BALL PAD CORNER
Top View
PIN 1 BALL PAD CORNER
2
31
4
(d1)
d
8
67
5
e
(e1)
Bottem View
8 SOLDER BALLS
This drawing is for general information only.
1.
Dimension 'b' is measured at maximum solder ball diameter.
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
AT93C46D [Preliminary]
5/3/05
DRAWING NO.
PO8U3-1B
5193E–SEEPR–11/07
REV.
8Y1 – MAP
AT93C46D [Preliminary]
PIN 1 INDEX AREA
A
D
2325 Orchard Parkway
R
San Jose, CA 95131
E
Top View
Side View
1
2
PIN 1 INDEX AREA
E1
8
7
A1
End View
A
SYMBOL
A – – 0.90
A1 0.00 – 0.05
D 4.70 4.90 5.10
E 2.80 3.00 3.20
D1 0.85 1.00 1.15
E1 0.85 1.00 1.15
b 0.25 0.30 0.35
e 0.65 TYP
L 0.50 0.60 0.70
b
Bottom View
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
TITLE
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1
3 4
D1
6 e 5
MAX
NOTE
DRAWING NO.
8Y1
L
2/28/03
REV.
C
5193E–SEEPR–11/07
19
7.Revision History
Doc. Rev.DateComments
5193E11/2007Modified ‘max’ value in AC Characteristics table
5193D8/2007
5193C6/2007
5193C3/2007Corrected Figures 4 and 5.
5193B2/2007Added ‘Ultra Thin’ description to 8-lead Mini-MAP package.
5193A1/2007Initial document release.
Moved Pinout figure
Added new feature for Die Sales
Modified Ordering Information table layout
Modified Park Marking Schemes
Updated to new template
Added Product Markup Scheme
Added Technical email contact
20
AT93C46D [Preliminary]
5193E–SEEPR–11/07
HeadquartersInternational
Atmel Corporation
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USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
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Product Contact
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Tel: (33) 1-30-60-70-00
Fax: (33) 1-30-60-71-11
Technical Support
s_eeprom@atmel.com
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9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Sales Contact
www.atmel.com/contacts
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