AT93C46A
5
Functional Description
The AT93C46A is accessed via a simple and versatile
three-wire serial communication interface. Device operation is controlle d by se ven ins tructio ns issued by the host
processor.
A valid instruction starts with a rising edge
of CS
and consists of a Start Bit (logic ‘1’) followed by the
appropriate Op Code and the desired memory Address
location.
READ (READ):
The Read (READ) instructio n contains
the Address code fo r the me mory l oc ati on to be read. After
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic ‘0’) precedes the 16-bit data output string.
ERASE/WRITE (EWEN):
To assure data integrity, the
part automatically go es into the Erase/Write Dis able
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, programming remains e nabled until an Er ase/Write Disable
(EWDS) instruction is executed or V
CC
power is removed
from the part.
ERASE (ERASE):
The Erase (ERASE) instruction pr ograms all bits in the specified memory location to the logical
‘1’ state. The self-timed erase cycle starts once the ERASE
instruction and address are decoded. The DO pin outputs
the READY/BUSY status of the part if CS is brought high
after being kept low for a minimum of 250 ns (t
CS
). A logic
‘1’ at pin DO indicates that the selected memory location
has been erase d, and the part is r eady for an other instr uction.
WRITE (WRITE):
The Write (WRITE) instruction contains
the 16 bits of data to be written into the specified memory
location. T he se lf-t ime d pr ogra mming cycl e, t
WP
, starts after
the last bit of data is received at serial data input pin DI.
The DO pin outputs the READY/BUSY status of the part if
CS is brought high after being kept low for a minimum of
250 ns (t
CS
). A logic ‘0’ at DO indicates that programming is
still in progress. A logic ‘1’ indicates that the memory location at the specified ad dres s h as been wr itte n with the data
pattern contained in the instruction and the part is ready for
further instructions.
A READY/BUSY status ca nnot be
obtained if the CS is brought high after the end of the
self-timed programming cycle, t
WP
.
ERASE ALL (ERA L):
The Erase All (ERAL) instruction
programs every bit in the memory array to the logic ‘1’ state
and is primarily u sed for te sting p urpos es. The DO pin outputs the READY/BU SY status of the pa rt if CS is brough t
high after being kept low for a minimum of 250 ns (t
CS
). The
ERAL instruction is vali d only at V
CC
= 5.0V ± 10%.
WRITE ALL (WRAL):
The Write All (WRAL) instruction
programs all memory locations with the data patterns specified in the instruction . The DO pin outputs the
READY/BUSY sta tus of the pa rt if CS i s brought h igh after
being kept low for a minimum of 250 ns (t
CS
). The WRAL
instruction is valid only at V
CC
= 5.0V ± 10%.
ERASE/WRITE DISAB LE (EWDS):
To protect against
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all programming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.