– High-performance 32-bit RISC Architecture
– High-density 16-bit Instruction Set
– Leader in MIPS/Watt
– EmbeddedICE
• Internal High-speed Flash
– 512 Kbytes, Organized in Two Contiguous Banks of 1024 Pages of 256 Bytes Dual
Plane (AT91SAM7SE512)
– 256 Kbytes (AT91SAM7SE256) Organized in One Bank of 1024 Pages of 256 Bytes
Single Plane (AT91SAM7SE256)
– 32 Kbytes (AT91SAM7SE32) Organized in One Bank of 256 Pages of 128 Bytes
Single Plane (AT91SAM7SE32)
– Single Cycle Access at Up to 30 MHz in Worst Case Conditions
– Prefetch Buffer Optimizing Thumb Instruction Execution at Maximum Speed
– Page Programming Time: 6 ms, Including Page Auto-erase, Full Erase Time: 15 ms
– 10,000 Erase Cycles, 10-year Data Retention Capability, Sector Lock Capabilities,
Flash Security Bit
– Fast Flash Programming Interface for High Volume Production
• 32 Kbytes (AT91SAM7SE512/256) or 8 Kbytes (AT91SAM7SE32) of Internal
High-speed SRAM, Single-cycle Access at Maximum Speed
• One External Bus Interface (EBI)
– Supports SDRAM, Static Memory, Glueless Connection to CompactFlash® and
ECC-enabled NAND Flash
• Memory Controller (MC)
– Embedded Flash Controller
– Memory Protection Unit
– Abort Status and Misalignment Detection
• Reset Controller (RSTC)
– Based on Power-on Reset Cells and Low-power Factory-calibrated Brownout
Detector
– Provides External Reset Signal Shaping and Reset Source Status
• Clock Generator (CKGR)
– Low-power RC Oscillator, 3 to 20 MHz On-chip Oscillator and One PLL
• Power Management Controller (PMC)
– Power Optimization Capabilities, Including Slow Clock Mode (Down to 500 Hz) and
Idle Mode
– Three Programmable External Clock Signals
• Advanced Interrupt Controller (AIC)
– Individually Maskable, Eight-level Priority, Vectored Interrupt Sources
– Two External Interrupt Sources and One Fast Interrupt Source, Spurious Interrupt
Protected
• Debug Unit (DBGU)
– Two-wire UART and Support for Debug Communication Channel interrupt,
Programmable ICE Access Prevention
• Periodic Interval Timer (PIT)
– 20-bit Programmable Counter plus 12-bit Interval Counter
• Windowed Watchdog (WDT)
– 12-bit key-protected Programmable Counter
– Provides Reset or Interrupt Signals to the System
™
In-circuit Emulation, Debug Communication Channel Support
®
ARM® Thumb® Processor
AT91 ARM
Thumb-based
Microcontrollers
AT91SAM7SE512
AT91SAM7SE256
AT91SAM7SE32
Preliminary
6222B–ATARM–26-Mar-07
– Counter May Be Stopped While the Processor is in Debug State or in Idle Mode
• Real-time Timer (RTT)
– 32-bit Free-running Counter with Alarm
– Runs Off the Internal RC Oscillator
• Three Parallel Input/Output Controllers (PIO)
– Eighty-eight Programmable I/O Lines Multiplexed with up to Two Peripheral I/Os
– Input Change Interrupt Capability on Each I/O Line
– Individually Programmable Open-drain, Pull-up Resistor and Synchronous Output
– Schmitt Trigger on All inputs
• Eleven Peripheral DMA Controller (PDC) Channels
• One USB 2.0 Full Speed (12 Mbits per second) Device Port
– Independent Clock and Frame Sync Signals for Each Receiver and Transmitter
– I²S Analog Interface Support, Time Division Multiplex Support
– High-speed Continuous Data Stream Capabilities with 32-bit Data Transfer
• Two Universal Synchronous/Asynchronous Receiver Transmitters (USART)
– Individual Baud Rate Generator, IrDA® Infrared Modulation/Demodulation
– Support for ISO7816 T0/T1 Smart Card, Hardware Handshaking, RS485 Support
– Full Modem Line Support on USART1
• One Master/Slave Serial Peripheral Interfaces (SPI)
– 8- to 16-bit Programmable Data Length, Four External Peripheral Chip Selects
• One Three-channel 16-bit Timer/Counter (TC)
– Three External Clock Inputs, Two Multi-purpose I/O Pins per Channel
– Double PWM Generation, Capture/Waveform Mode, Up/Down Capability
• One Four-channel 16-bit PWM Controller (PWMC)
• One Two-wire Interface (TWI)
– Master, Multi-Master and Slave Mode Support, All Two-wire Atmel EEPROMs Supported
– General Call Supported in Slave Mode
• One 8-channel 10-bit Analog-to-Digital Converter, Four Channels Multiplexed with Digital I/Os
• SAM-BA
• IEEE
™
– Default Boot program
– Interface with SAM-BA Graphic User Interface
®
1149.1 JTAG Boundary Scan on All Digital Pins
• Four High-current Drive I/O lines, Up to 16 mA Each
• Power Supplies
– Embedded 1.8V Regulator, Drawing up to 100 mA for the Core and External Components
– 1.8V or 3,3V VDDIO I/O Lines Power Supply, Independent 3.3V VDDFLASH Flash Power Supply
– 1.8V VDDCORE Core Power Supply with Brownout Detector
• Fully Static Operation:
– Up to 55 MHz at 1.8V and 85°C Worst Case Conditions
– Up to 48 MHz at 1.65V and 85°C Worst Case Conditions
• Available in a 128-lead LQFP Green Package, or a 144-ball LFBGA RoHS-compliant Package
2
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
1.Description
AT91SAM7SE512/256/32 Preliminary
Atmel's AT91SAM7SE Series is a member of its Smart ARM Microcontroller family based on the
32-bit ARM7
• AT91SAM7SE512 features a 512 Kbyte high-speed Flash and a 32 Kbyte SRAM.
• AT91SAM7SE256 features a 256 Kbyte high-speed Flash and a 32 Kbyte SRAM.
• AT91SAM7SE32 features a 32 Kbyte high-speed Flash and an 8 Kbyte SRAM.
It also embeds a large set of peripherals, including a USB 2.0 device, an External Bus Interface
(EBI), and a complete set of system functions minimizing the number of external components.
The EBI incorporates controllers for synchronous DRAM (SDRAM) and Static memories and
features specific circuitry facilitating the interface for NAND Flash, SmartMedia and
CompactFlash.
The device is an ideal migration path for 8/16-bit microcontroller users looking for additional performance, extended memory and higher levels of system integration.
The embedded Flash memory can be programmed in-system via the JTAG-ICE interface or via
a parallel interface on a production programmer prior to mounting. Built-in lock bits and a security bit protect the firmware from accidental overwrite and preserve its confidentiality.
™
RISC processor and high-speed Flash memory.
The AT91SAM7SE Series system controller includes a reset controller capable of managing the
power-on sequence of the microcontroller and the complete system. Correct device operation
can be monitored by a built-in brownout detector and a watchdog running off an integrated RC
oscillator.
By combining the ARM7TDMI processor with on-chip Flash and SRAM, and a wide range of
peripheral functions, including USART, SPI, External Bus Interface, Timer Counter, RTT and
Analog-to-Digital Converters on a monolithic chip, the AT91SAM7SE512/256/32 is a powerful
device that provides a flexible, cost-effective solution to many embedded control applications.
1.1Configuration Summary of the AT91SAM7SE512, AT91SAM7SE256 and AT91SAM7SE32
The AT91SAM7SE512, AT91SAM7SE256 and AT91SAM7SE32 differ in memory sizes and
organization. Table 1-1 below summarizes the configurations for the three devices.
Table 1-1.Configuration Summary
DeviceFlash SizeFlash OrganizationRAM Size
AT91SAM7SE512512K bytesdual plane32K bytes
AT91SAM7SE256256K bytessingle plane32K bytes
AT91SAM7SE3232K bytessingle plane8K bytes
6222B–ATARM–26-Mar-07
3
2.Block Diagram
Figure 2-1.AT91SAM7SE512/256/32 Block Diagram Signal Description
VDDOUTVoltage Regulator OutputPower1.85V
VDDFLASHFlash and USB Power SupplyPower 3V to 3.6V
VDDIOI/O Lines Power SupplyPower3V to 3.6V or 1.65V to 1.95V
VDDCORECore Power SupplyPower1.65V to 1.95V
VDDPLLPLLPower1.65V to 1.95V
GNDGroundGround
The AT91SAM7SE512/256/32 has six types of power supply pins and integrates a voltage regulator, allowing the device to be supplied with only one voltage. The six power supply pin types
are:
• VDDIN pin. It powers the voltage regulator and the ADC; voltage ranges from 3.0V to 3.6V,
3.3V nominal.
• VDDOUT pin. It is the output of the 1.8V voltage regulator.
• VDDIO pin. It powers the I/O lines; two voltage ranges are supported:
– from 3.0V to 3.6V, 3.3V nominal
– or from 1.65V to 1.95V, 1.8V nominal.
• VDDFLASH pin. It powers the USB transceivers and a part of the Flash. It is required for the
Flash to operate correctly; voltage ranges from 3.0V to 3.6V, 3.3V nominal.
• VDDCORE pins. They power the logic of the device; voltage ranges from 1.65V to 1.95V,
1.8V typical. It can be connected to the VDDOUT pin with decoupling capacitor. VDDCORE
is required for the device, including its embedded Flash, to operate correctly.
• VDDPLL pin. It powers the oscillator and the PLL. It can be connected directly to the
VDDOUT pin.
In order to decrease current consumption, if the voltage regulator and the ADC are not used,
VDDIN, ADVREF, AD4, AD5, AD6 and AD7 should be connected to GND. In this case VDDOUT
should be left unconnected.
AT91SAM7SE512/256/32 Preliminary
No separate ground pins are provided for the different power supplies. Only GND pins are provided and should be connected as shortly as possible to the system ground plane.
5.2Power Consumption
The AT91SAM7SE512/256/32 has a static current of less than 60 µA on VDDCORE at 25°C,
including the RC oscillator, the voltage regulator and the power-on reset when the brownout
detector is deactivated. Activating the brownout detector adds 20 µA static current.
The dynamic power consumption on VDDCORE is less than 80 mA at full speed when running
out of the Flash. Under the same conditions, the power consumption on VDDFLASH does not
exceed 10 mA.
5.3Voltage Regulator
The AT91SAM7SE512/256/32 embeds a voltage regulator that is managed by the System
Controller.
In Normal Mode, the voltage regulator consumes less than 100 µA static current and draws 100
mA of output current.
The voltage regulator also has a Low-power Mode. In this mode, it consumes less than 20 µA
static current and draws 1 mA of output current.
Adequate output supply decoupling is mandatory for VDDOUT to reduce ripple and avoid oscillations. The best way to achieve this is to use two capacitors in parallel:
6222B–ATARM–26-Mar-07
13
• One external 470 pF (or 1 nF) NPO capacitor should be connected between VDDOUT and
GND as close to the chip as possible.
• One external 2.2 µF (or 3.3 µF) X7R capacitor should be connected between VDDOUT and
GND.
Adequate input supply decoupling is mandatory for VDDIN in order to improve startup stability
and reduce source voltage drop. The input decoupling capacitor should be placed close to the
chip. For example, two capacitors can be used in parallel: 100 nF NPO and 4.7 µF X7R.
5.4Typical Powering Schematics
The AT91SAM7SE512/256/32 supports a 3.3V single supply mode. The internal regulator input
connected to the 3.3V source and its output feeds VDDCORE and the VDDPLL. Figure 5-1
shows the power schematics to be used for USB bus-powered systems.
Figure 5-1.3.3V System Single Power Supply Schematic
VDDFLASH
Power Source
ranges
from 4.5V (USB)
to 18V
DC/DC Converter
3.3V
VDDIO
VDDIN
VDDOUT
VDDCORE
VDDPLL
Voltage
Regulator
14
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
6.I/O Lines Considerations
6.1JTAG Port Pins
TMS, TDI and TCK are Schmitt trigger inputs. TMS, TDI and TCK do not integrate a pull-up
resistor.
TDO is an output, driven at up to VDDIO, and has no pull-up resistor.
The pin JTAGSEL is used to select the JTAG boundary scan when asserted at a high level. The
pin JTAGSEL integrates a permanent pull-down resistor of about 15 kΩ to GND, so that it can be
left unconnected for normal operations.
6.2Test Pin
The TST pin is used for manufacturing test or fast programming mode of the
AT91SAM7SE512/256/32 when asserted high. The TST pin integrates a permanent pull-down
resistor of about 15 kΩ to GND, so that it can be left unconnected for normal operations.
To enter fast programming mode, the TST pin and the PA0 and PA1 pins should be tied high
and PA2 tied low.
Driving the TST pin at a high level while PA0 or PA1 is driven at 0 leads to unpredictable results.
AT91SAM7SE512/256/32 Preliminary
6.3Reset Pin
6.4ERASE Pin
The NRST pin is bidirectional. It is handled by the on-chip reset controller and can be driven low
to provide a reset signal to the external components or asserted low externally to reset the
microcontroller. There is no constraint on the length of the reset pulse, and the reset controller
can guarantee a minimum pulse length. This allows connection of a simple push-button on the
NRST pin as system user reset, and the use of the NRST signal to reset all the components of
the system.
An external power-on reset can drive this pin during the start-up instead of using the internal
power-on reset circuit.
The NRST pin integrates a permanent pull-up of about 100 kΩ resistor to VDDIO.
This pin has Schmitt trigger input.
The ERASE pin is used to re-initialize the Flash content and some of its NVM bits. It integrates a
permanent pull-down resistor of about 15 kΩ to GND, so that it can be left unconnected for nor-
mal operations.
This pin is debounced by the RC oscillator to improve the glitch tolerance. When the pin is tied to
high during less than 100 ms, ERASE pin is not taken into account. The pin must be tied high
during more than 220 ms to perform the re-initialization of the Flash.
6.5SDCK Pin
6222B–ATARM–26-Mar-07
The SDCK pin is dedicated to the SDRAM Clock and is an output-only without pull-up. Maximum
Output Frequency of this pad is 48 MHz at 3.0V and 25 MHz at 1.65V with a maximum load of
30 pF.
15
6.6PIO Controller lines
All the I/O lines PA0 to PA31, PB0 to PB31, PC0 to PC23 integrate a programmable pull-up
resistor. Programming of this pull-up resistor is performed independently for each I/O line
through the PIO controllers.
Typical pull-up value is 100 kΩ.
All the I/O lines have schmitt trigger inputs.
6.7I/O Lines Current Drawing
The PIO lines PA0 to PA3 are high-drive current capable. Each of these I/O lines can drive up to
16 mA permanently.
The remaining I/O lines can draw only 8 mA.
However, the total current drawn by all the I/O lines cannot exceed 300 mA.
16
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
7.Processor and Architecture
7.1ARM7TDMI Processor
• RISC processor based on ARMv4T Von Neumann architecture
– Runs at up to 55 MHz, providing 0.9 MIPS/MHz (core supplied with 1.8V)
• EmbeddedICE™ (Integrated embedded in-circuit emulator)
– Two watchpoint units
– Test access port accessible through a JTAG protocol
– Debug communication channel
• Debug Unit
–Two-pin UART
– Debug communication channel interrupt handling
– Chip ID Register
• IEEE1149.1 JTAG Boundary-scan on all digital pins
®
high-performance 32-bit instruction set
®
high code density 16-bit instruction set
Decode (D)
AT91SAM7SE512/256/32 Preliminary
7.3Memory Controller
• Programmable Bus Arbiter
• Address decoder provides selection signals for
• Abort Status Registers
• Misalignment Detector
• Remap Command
• 16-area Memory Protection Unit (Internal Memory and peripheral protection only)
– Handles requests from the ARM7TDMI and the Peripheral DMA Controller
– Four internal 1 Mbyte memory areas
– One 256-Mbyte embedded peripheral area
– Eight external 256-Mbyte memory areas
– Source, Type and all parameters of the access leading to an abort are saved
– Facilitates debug by detection of bad pointers
– Alignment checking of all data accesses
– Abort generation in case of misalignment
– Remaps the SRAM in place of the embedded non-volatile memory
– Allows handling of dynamic exception vectors
6222B–ATARM–26-Mar-07
17
– Individually programmable size between 1K Byte and 1M Byte
– Individually programmable protection against write and/or user access
– Peripheral protection against write and/or user access
• Embedded Flash Controller
– Embedded Flash interface, up to three programmable wait states
– Prefetch buffer, buffering and anticipating the 16-bit requests, reducing the required
wait states
– Key-protected program, erase and lock/unlock sequencer
– Single command for erasing, programming and locking operations
– Interrupt generation in case of forbidden operation
• Additional Logic for NAND Flash and CompactFlash
– NAND Flash support: 8-bit as well as 16-bit devices are supported
– CompactFlash support: all modes (Attribute Memory, Common Memory, I/O, True
IDE) are supported but the signals _IOIS16 (I/O and True IDE modes) and -ATA SEL
(True IDE mode) are not handled.
• Optimized External Bus:
– 16- or 32-bit Data Bus (32-bit Data Bus for SDRAM only)
– Up to 23-bit Address Bus, Up to 8-Mbytes Addressable
– Up to 8 Chip Selects, each reserved to one of the eight Memory Areas
– Optimized pin multiplexing to reduce latencies on External Memories
• Configurable Chip Select Assignment:
– Static Memory Controller on NCS0
– SDRAM Controller or Static Memory Controller on NCS1
– Static Memory Controller on NCS2, Optional CompactFlash Support
– Static Memory Controller on NCS3, NCS5 - NCS6, Optional NAND Flash Support
– Static Memory Controller on NCS4, Optional CompactFlash Support
– Static Memory Controller on NCS7
®
Support
7.5Static Memory Controller
• External memory mapping, 512-Mbyte address space
• 8-, or 16-bit Data Bus
• Up to 8 Chip Select Lines
• Multiple Access Modes supported
– Byte Write or Byte Select Lines
– Two different Read Protocols for each Memory Bank
18
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
• Multiple device adaptability
• Multiple Wait State Management
7.6SDRAM Controller
• Numerous configurations supported
• Programming facilities
• Energy-saving capabilities
• Error detection
• SDRAM Power-up Initialization by software
• Latency is set to two clocks (CAS Latency of 1, 3 Not Supported)
• Auto Precharge Command not used
• Mobile SDRAM supported (except for low-power extended mode and deep power-down mode)
AT91SAM7SE512/256/32 Preliminary
– Compliant with LCD Module
– Compliant with PSRAM in synchronous operations
– Programmable Setup Time Read/Write
– Programmable Hold Time Read/Write
– Programmable Wait State Generation
– External Wait Request
– Programmable Data Float Time
– 2K, 4K, 8K Row Address Memory Parts
– SDRAM with two or four Internal Banks
– SDRAM with 16- or 32-bit Data Path
– Word, half-word, byte access
– Automatic page break when Memory Boundary has been reached
– Multibank Ping-pong Access
– Timing parameters specified by software
– Automatic refresh operation, refresh rate is programmable
– Self-refresh, and Low-power Modes supported
– Refresh Error Interrupt
7.7Error Corrected Code Controller
• Tracking the accesses to a NAND Flash device by triggering on the corresponding chip select
• Single bit error correction and 2-bit Random detection.
• Automatic Hamming Code Calculation while writing
– ECC value available in a register
• Automatic Hamming Code Calculation while reading
– Error Report, including error flag, correctable error flag and word address being
detected erroneous
– Supports 8- or 16-bit NAND Flash devices with 512-, 1024-, 2048- or 4096-byte
pages
6222B–ATARM–26-Mar-07
19
7.8Peripheral DMA Controller
• Handles data transfer between peripherals and memories
• Eleven channels
– Two for each USART
– Two for the Debug Unit
– Two for the Serial Synchronous Controller
– Two for the Serial Peripheral Interface
– One for the Analog-to-digital Converter
• Low bus arbitration overhead
– One Master Clock cycle needed for a transfer from memory to peripheral
– Two Master Clock cycles needed for a transfer from peripheral to memory
• Next Pointer management for reducing interrupt latency requirements
• Peripheral DMA Controller (PDC) priority is as follows (from the highest priority to the lowest):
Receive DBGU
Receive USART0
Receive USART1
Receive SSC
Receive ADC
Receive SPI
Tr an s m itD B GU
TransmitUSART0
TransmitUSART1
TransmitSSC
TransmitSPI
20
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
8.Memories
AT91SAM7SE512/256/32 Preliminary
• 512 Kbytes of Flash Memory (AT91SAM7SE512)
– dual plane
– two contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, each protecting 32 lock regions of 64 pages
– Protection Mode to secure contents of the Flash
• 256 Kbytes of Flash Memory (AT91SAM7SE256)
– single plane
– one bank of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 lock regions of 64 pages
– Protection Mode to secure contents of the Flash
• 32 Kbytes of Flash Memory (AT91SAM7SE32)
– single plane
– one bank of 256 pages of 128 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 lock regions of 32 pages
– Protection Mode to secure contents of the Flash
• 32 Kbytes of Fast SRAM (AT91SAM7SE512/256)
– Single-cycle access at full speed
• 8 Kbytes of Fast SRAM (AT91SAM7SE32)
– Single-cycle access at full speed
6222B–ATARM–26-Mar-07
21
Figure 8-1.AT91SAM7SE Memory Mapping
Address Memory SpaceInternal Memory Mapping
0x0000 0000
0x0FFF FFFF
0x1000 0000
0x1FFF FFFF
0x2000 0000
0x2FFF FFFF
0x3000 0000
0x3FFF FFFF
0x4000 0000
0x4FFF FFFF
0x5000 0000
0x5FFF FFFF
0x6000 0000
0x6FFF FFFF
0x7000 0000
0x7FFF FFFF
0x8000 0000
0x8FFF FFFF
0x9000 0000
0xEFFF FFFF
0xF000 0000
0xFFFF FFFF
Internal Memories
EBI
Chip Select 0
SMC
EBI
Chip Select 1/
SMC or SDRAMC
EBI
Chip Select 2
SMC
EBI
Chip Select 3
SMC/NANDFlash/
SmartMedia
EBI
Chip Select 4
SMC
Compact Flash
EBI
Chip Select 5
SMC
Compact Flash
EBI
Chip Select 6
EBI
Chip Select 7
Undefined
(Abort)
Internal Peripherals
256 MBytes
256 MBytes
256 MBytes
256 MBytes
256 MBytes
256 MBytes
256 MBytes
256 MBytes
256 MBytes
6 x 256 MBytes
1,536 MBytes
256 MBytes
0xF000 0000
0xFFF9 FFFF
0xFFFA 0000
0xFFFA 3FFF
0xFFFA 4000
0xFFFA FFFF
0xFFFB 0000
0xFFFB 3FFF
0xFFFB 4000
0xFFFB 7FFF
0xFFFB 8000
0xFFFB BFFF
0xFFFB C000
0xFFFB FFFF
0xFFFC 0000
0xFFFC 3FFF
0xFFFC 4000
0xFFFC 7FFF
0xFFFC 8000
0xFFFC BFFF
0xFFFC C000
0xFFFC FFFF
0xFFFD 0000
0xFFFD 3FFF
0xFFFD 4000
0xFFFD 7FFF
0xFFFD 8000
0xFFFD BFFF
0xFFFD C000
0xFFFD FFFF
0xFFFE 0000
0xFFFE 3FFF
0xFFFE 4000
0xFFFF EFFF
0xFFFF F000
0xFFFF FFFF
0x0000 0000
0x000F FFFF
0x0010 0000
0x001F FFFF
0x0020 0000
0x002F FFFF
0x0030 0000
0x003F FFFF
0x0040 0000
0x0FFF FFFF
Peripheral Mapping
TC0, TC1, TC2
Boot Memory (1)
Flash before Remap
SRAM after Remap
Internal Flash
Internal SRAM
Internal ROM
Reserved
ReservedReserved
Reserved
UDP
Reserved
TWI
Reserved
USART0
USART1
ReservedReserved
PWMC
ReservedReserved
SSC
ADC
ReservedReserved
SPI
Reserved
SYSC
16 Kbytes
16 Kbytes
16 Kbytes
16 Kbytes
16 Kbytes
16 Kbytes
16 Kbytes
16 Kbytes
16 Kbytes
1 MBytes
1 MBytes
1 MBytes
1 MBytes
252 MBytes
Note:
(1) Can be ROM, Flash or SRAM
depending on GPNVM2 and REMAP
System Controller Mapping
0xFFFF F000
0xFFFF F1FF
0xFFFF F200
DBGU
0xFFFF F3FF
0xFFFF F400
PIOA
0xFFFF F5FF
0xFFFF F600
PIOB
0xFFFF F7FF
0xFFFF F800
PIOC
0xFFFF F9FF
0xFFFF FA00
Reserved
0xFFFF FBFF
0xFFFF FC00
0xFFFF FCFF
0xFFFF FD00
0xFFFF FD0F
0xFFFF FD20
0xFFFF FC2F
0xFFFF FD30
0xFFFF FC3F
0xFFFF FD40
0xFFFF FD4F
0xFFFF FD60
0xFFFF FC6F
0xFFFF FD70
0xFFFF FEFF
0xFFFF FF00
0xFFFF FFFF
PMC
RSTC
Reserved
WDT
Reserved
VREG
Reserved
AIC
RTT
PIT
MC
512 Bytes/128 registers
512 Bytes/128 registers
512 Bytes/128 registers
512 Bytes/128 registers
512 Bytes/128 registers
256 Bytes/64 registers
16 Bytes/4 registers
16 Bytes/4 registers
16 Bytes/4 registers
16 Bytes/4 registers
4 Bytes/1 register
256 Bytes/64 registers
22
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
A first level of address decoding is performed by the Memory Controller, i.e., by the implementation of the Advanced System Bus (ASB) with additional features.
Decoding splits the 4G bytes of address space into 16 areas of 256M bytes. The areas 1 to 8 are
directed to the EBI that associates these areas to the external chip selects NC0 to NCS7. The
area 0 is reserved for the addressing of the internal memories, and a second level of decoding
provides 1M byte of internal memory area. The area 15 is reserved for the peripherals and provides access to the Advanced Peripheral Bus (APB).
Other areas are unused and performing an access within them provides an abort to the master
requesting such an access.
8.1Embedded Memories
8.1.1Internal Memories
8.1.1.1Internal SRAM
The AT91SAM7SE512/256 embeds a high-speed 32-Kbyte SRAM bank. The AT91SAM7SE32
embeds a high-speed 8-Kbyte SRAM bank. After reset and until the Remap Command is performed, the SRAM is only accessible at address 0x0020 0000. After Remap, the SRAM also
becomes available at address 0x0.
AT91SAM7SE512/256/32 Preliminary
8.1.1.2Internal ROM
8.1.1.3Internal Flash
The AT91SAM7SE512/256/32 embeds an Internal ROM. At any time, the ROM is mapped at
address 0x30 0000. The ROM contains the FFPI and the SAM-BA boot program.
• The AT91SAM7SE512 features two banks of 256 Kbytes of Flash.
• The AT91SAM7SE256 features one bank of 256 Kbytes of Flash.
• The AT91SAM7SE32 features one bank of 32 Kbytes of Flash.
At any time, the Flash is mapped to address 0x0010 0000.
A general purpose NVM (GPNVM) bit is used to boot either on the ROM (default) or from the
Flash.
This GPNVM bit can be cleared or set respectively through the commands “Clear General-purpose NVM Bit” and “Set General-purpose NVM Bit” of the EFC User Interface.
Setting the GPNVM bit 2 selects the boot from the Flash, clearing it selects the boot from the
ROM. Asserting ERASE clears the GPNVM bit 2 and thus selects the boot from the ROM by
default.
6222B–ATARM–26-Mar-07
23
Figure 8-2.Internal Memory Mapping with GPNVM Bit 2 = 0 (default)
256M Bytes
0x0000 0000
0x000F FFFF
0x0010 0000
0x001F FFFF
0x0020 0000
0x002F FFFF
0x0030 0000
0x003F FFFF
0x0040 0000
0x0FFF FFFF
ROM Before Remap
SRAM After Remap
Internal FLASH
Internal SRAM
Internal ROM
Undefined Areas
(Abort)
Figure 8-3.Internal Memory Mapping with GPNVM Bit 2 = 1
256M Bytes
0x0000 0000
0x000F FFFF
0x0010 0000
0x001F FFFF
0x0020 0000
0x002F FFFF
0x0030 0000
0x003F FFFF
0x0040 0000
Flash Before Remap
SRAM After Remap
Internal FLASH
Internal SRAM
Internal ROM
Undefined Areas
(Abort)
1 M Bytes
1 M Bytes
1 M Bytes
1 M Bytes
252 M Bytes
1 M Bytes
1 M Bytes
1 M Bytes
1 M Bytes
252 M Bytes
8.1.2Embedded Flash
8.1.2.1Flash Overview
The Flash of the AT91SAM7SE512 is organized in two banks (dual plane) of 1024 pages of 256
bytes. It reads as 131,072 32-bit words.
The Flash of the AT91SAM7SE256 is organized in 1024 pages (single plane) of 256 bytes. It
reads as 65,536 32-bit words.
The Flash of the AT91SAM7SE32 is organized in 256 pages (single plane) of 128 bytes. It reads
as 32,768 32-bit words.
The Flash of the AT91SAM7SE32 contains a 128-byte write buffer, accessible through a 32-bit
interface.
The Flash of the AT91SAM7SE512/256 contains a 256-byte write buffer, accessible through a
32-bit interface.
24
AT91SAM7SE512/256/32 Preliminary
0x0FFF FFFF
6222B–ATARM–26-Mar-07
The Flash benefits from the integration of a power reset cell and from the brownout detector.
This prevents code corruption during power supply changes, even in the worst conditions.
8.1.2.2Embedded Flash Controller
The Embedded Flash Controller (EFC) manages accesses performed by the masters of the system. It enables reading the Flash and writing the write buffer. It also contains a User Interface,
mapped within the Memory Controller on the APB. The User Interface allows:
• programming of the access parameters of the Flash (number of wait states, timings, etc.)
• starting commands such as full erase, page erase, page program, NVM bit set, NVM bit
clear, etc.
• getting the end status of the last command
• getting error status
• programming interrupts on the end of the last commands or on errors
The Embedded Flash Controller also provides a dual 32-bit Prefetch Buffer that optimizes 16-bit
access to the Flash. This is particularly efficient when the processor is running in Thumb mode.
• Two EFCs (EFC0 and EFC1) are embedded in the SAM7SE512 to control each plane of 256
KBytes. Dual plane organization allows concurrent Read and Program.
• One EFC (EFC0) is embedded in the SAM7SE256 to control the single plane 256 KBytes.
• One EFC (EFC0) is embedded in the SAM7SE32 to control the single plane 32 KBytes.
AT91SAM7SE512/256/32 Preliminary
8.1.2.3Lock Regions
The AT91SAM7SE512 Embedded Flash Controller manages 32 lock bits to protect 32 regions
of the flash against inadvertent flash erasing or programming commands. The
AT91SAM7SE512 contains 32 lock regions and each lock region contains 64 pages of 256
bytes. Each lock region has a size of 16 Kbytes.
The AT91SAM7SE256 Embedded Flash Controller manages 16 lock bits to protect 16 regions
of the flash against inadvertent flash erasing or programming commands. The
AT91SAM7SE256 contains 16 lock regions and each lock region contains 64 pages of 256
bytes. Each lock region has a size of 16 Kbytes.
The AT91SAM7SE32 Embedded Flash Controller manages 8 lock bits to protect 8 regions of
the flash against inadvertent flash erasing or programming commands. The AT91SAM7SE32
contains 8 lock regions and each lock region contains 32 pages of 128 bytes. Each lock region
has a size of 4 Kbytes.
If a locked-region’s erase or program command occurs, the command is aborted and the EFC
trigs an interrupt.
The 32 (AT91SAM7SE512), 16 (AT91SAM7SE256) or 8 (AT91SAM7SE32) NVM bits are software programmable through the EFC User Interface. The command “Set Lock Bit” enables the
protection. The command “Clear Lock Bit” unlocks the lock region.
Asserting the ERASE pin clears the lock bits, thus unlocking the entire Flash.
8.1.2.4Security Bit Feature
The AT91SAM7SE512/256/32 features a security bit, based on a specific NVM-bit. When the
security is enabled, any access to the Flash, either through the ICE interface or through the Fast
Flash Programming Interface, is forbidden.
6222B–ATARM–26-Mar-07
25
The security bit can only be enabled through the Command “Set Security Bit” of the EFC User
Interface. Disabling the security bit can only be achieved by asserting the ERASE pin at 1 and
after a full flash erase is performed. When the security bit is deactivated, all accesses to the
flash are permitted.
It is important to note that the assertion of the ERASE pin should always be longer than 200 ms.
As the ERASE pin integrates a permanent pull-down, it can be left unconnected during normal
operation. However, it is safer to connect it directly to GND for the final application.
8.1.2.5Non-volatile Brownout Detector Control
Two general purpose NVM (GPNVM) bits are used for controlling the brownout detector (BOD),
so that even after a power loss, the brownout detector operations remain in their state.
These two GPNVM bits can be cleared or set respectively through the commands “Clear General-purpose NVM Bit” and “Set General-purpose NVM Bit” of the EFC User Interface.
• GPNVM bit 0 is used as a brownout detector enable bit. Setting the GPNVM bit 0 enables the
BOD, clearing it disables the BOD. Asserting ERASE clears the GPNVM bit 0 and thus
disables the brownout detector by default.
• GPNVM bit 1 is used as a brownout reset enable signal for the reset controller. Setting the
GPNVM bit 1 enables the brownout reset when a brownout is detected, Clearing the GPNVM
bit 1 disables the brownout reset. Asserting ERASE disables the brownout reset by default.
8.1.2.6Calibration Bits
Sixteen NVM bits are used to calibrate the brownout detector and the voltage regulator. These
bits are factory configured and cannot be changed by the user. The ERASE pin has no effect on
the calibration bits.
8.1.3Fast Flash Programming Interface
The Fast Flash Programming Interface allows programming the device through either a serial
JTAG interface or through a multiplexed fully-handshaked parallel port. It allows gang-programming with market-standard industrial programmers.
The FFPI supports read, page program, page erase, full erase, lock, unlock and protect
commands.
The Fast Flash Programming Interface is enabled and the Fast Programming Mode is entered
when the TST pin and the PA0 and PA1 pins are all tied high and PA2 tied to low.
• The Flash of the AT91SAM7SE512 is organized in 2048 pages of 256 bytes (dual plane). It
reads as 131,072 32-bit words.
• The Flash of the AT91SAM7SE256 is organized in 1024 pages of 256 bytes (single plane). It
reads as 65,536 32-bit words.
• The Flash of the AT91SAM7SE32 is organized in 256 pages of 128 bytes (single plane). It
reads as 32,768 32-bit words.
• The Flash of the AT91SAM7SE512/256 contains a 256-byte write buffer, accessible through
a 32-bit interface.
• The Flash of the AT91SAM7SE32 contains a 128-byte write buffer, accessible through a 32-
bit interface.
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AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
8.1.4SAM-BA™ Boot
The SAM-BA Boot is a default Boot Program which provides an easy way to program in-situ the
on-chip Flash memory.
The SAM-BA Boot Assistant supports serial communication via the DBGU or the USB Device
Port.
• Communication via the DBGU supports a wide range of crystals from 3 to 20 MHz via
software auto-detection.
• Communication via the USB Device Port is limited to an 18.432 MHz crystal.
The SAM-BA Boot provides an interface with SAM-BA Graphic User Interface (GUI).
The SAM-BA Boot is in ROM and is mapped in Flash at address 0x0 when GPNVM bit 2 is set to
0.
8.2External Memories
The external memories are accessed through the External Bus Interface.
Refer to the memory map in Figure 8-1 on page 22.
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
27
9.System Controller
The System Controller manages all vital blocks of the microcontroller: interrupts, clocks, power,
time, debug and reset.
The System Controller peripherals are all mapped to the highest 4 Kbytes of address space,
between addresses 0xFFFF F000 and 0xFFFF FFFF.
Figure 9-1 on page 29 shows the System Controller Block Diagram.
Figure 8-1 on page 22 shows the mapping of the User Interface of the System Controller periph-
erals. Note that the Memory Controller configuration user interface is also mapped within this
address space.
• Based on one power-on reset cell and a double brownout detector
• Status of the last reset, either Power-up Reset, Software Reset, User Reset, Watchdog
Reset, Brownout Reset
• Controls the internal resets and the NRST pin output
• Allows to shape a signal on the NRST line, guaranteeing that the length of the pulse meets
any requirement.
9.1.1Brownout Detector and Power On Reset
The AT91SAM7SE512/256/32 embeds one brownout detection circuit and a power-on reset
cell. The power-on reset is supplied with and monitors VDDCORE.
Both signals are provided to the Flash to prevent any code corruption during power-up or powerdown sequences or if brownouts occur on the VDDCORE power supply.
The power-on reset cell has a limited-accuracy threshold at around 1.5V. Its output remains low
during power-up until VDDCORE goes over this voltage level. This signal goes to the reset controller and allows a full re-initialization of the device.
The brownout detector monitors the VDDCORE and VDDFLASH levels during operation by
comparing it to a fixed trigger level. It secures system operations in the most difficult environments and prevents code corruption in case of brownout on the VDDCORE or VDDFLASH.
When the brownout detector is enabled and VDDCORE decreases to a value below the trigger
level (Vbot18-, defined as Vbot18 - hyst/2), the brownout output is immediately activated.
When VDDCORE increases above the trigger level (Vbot18+, defined as Vbot18 + hyst/2), the
reset is released. The brownout detector only detects a drop if the voltage on VDDCORE stays
below the threshold voltage for longer than about 1µs.
The VDDCORE threshold voltage has a hysteresis of about 50 mV, to ensure spike free brownout detection. The typical value of the brownout detector threshold is 1.68V with an accuracy of
± 2% and is factory calibrated.
When the brownout detector is enabled and VDDFLASH decreases to a value below the trigger
level (Vbot33-, defined as Vbot33 - hyst/2), the brownout output is immediately activated.
When VDDFLASH increases above the trigger level (Vbot33+, defined as Vbot33 + hyst/2), the
reset is released. The brownout detector only detects a drop if the voltage on VDDCORE stays
below the threshold voltage for longer than about 1µs.
The VDDFLASH threshold voltage has a hysteresis of about 50 mV, to ensure spike free brownout detection. The typical value of the brownout detector threshold is 2.80V with an accuracy of
± 3.5% and is factory calibrated.
The brownout detector is low-power, as it consumes less than 20 µA static current. However, it
can be deactivated to save its static current. In this case, it consumes less than 1µA. The deactivation is configured through the GPNVM bit 0 of the Flash.
9.2Clock Generator
The Clock Generator embeds one low-power RC Oscillator, one Main Oscillator and one PLL
with the following characteristics:
30
• RC Oscillator ranges between 22 KHz and 42 KHz
AT91SAM7SE512/256/32 Preliminary
6222B–ATARM–26-Mar-07
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