200 ns Maximum Access Time
6 ms Typical Sector Write
CMOS Low Power Consumption
•
20 mA Typical Active Current (Byte Mode)
400 µA Typic al Standby Current
Fully MS-DOS Compatible Flash Driver and Formatter
•
Virtual-Disk Flash Driver with 512 By tes/Sector
Random Read/Write to any Sector
No Erase Operation Required Prior to any Write
Zero Data Retention Power
•
Batteries not Required for Data Storage
PCMCIA/JEIDA 68-Pin Standard
•
Selectable Byte- or Word-Wide Configuration
High Re-programmable Endurance
•
Built-in Redundancy for Sector Replacement
Minimum 100,000 Write Cycles
Five Levels of Write Protection
•
Prevent Accidental Data Loss
Block Diagram
Pin Configuration
Pin NameFunction
A0-A21Addresses
D0-D15Data
,
CE2,
CE1
WE, OE, REG
, WP
CD
BVD1, BVD2
Control Signals
Card Status
Description
Atmel’s Flash Memory Card provides the highest system level
performance for data and file storage solutions to the portable
PC market segment. Data files and a pplications programs ca n be
stored on the AT5FC004. This allows OEM manufacturers of
portable system to eliminate the weight, power consumption and
reliability issues associated with electro-mechanical disk-based
systems. The AT5FC004 r equires a single voltage powe r supply
for total system operation. No batteries are needed for data retention due to its Flash-based technology. S ince no high volta ge
(12 V) is required to perform any write operation, the
AT5FC004 is suitable for the emerging "mobile" personal systems.
The AT5FC004 is com pa tible with the 6 8-pin P CMC IA/ JE IDA
international standard. Atmel’s Flash Memory Cards can be
read in either a byte-wide or word-wide mode which allows for
flexible integration into various system platform s. It c an be rea d
like any typical PCMCIA SRAM or ROM card.
Block Diagram
The Card Information Structure (CIS) can be written by the
OEM or by Atmel at the attribute memory address space using a
format utility. The CIS appears at the beginning of the card’s
attribute memory space and defines the low-level organization
of data on the PC card. The AT5FC004 contains a separate
2 Kbyte EEPROM memory for the card’s attribute memory
space.
The third party software solutions such as AWARD Software’s
CardWare system and the SCM’s Flash File System (FFS),
enables Atmel’s Flash Memory Card to emulate the function of
essentially all the major brand personal computers that are
DOS/Windows compatible.
For some unique portable computers, such as the
HP200/100/95LX series, the software Driver and Formatter are
also available. The Atmel Driver and Formatter utilizes a selfcontained spare sector replacement algorithm, enabled by Atmel’s small 512-byte sectors, to achieve long term card
reliability and endurance.
2AT5FC004
Absolute Maximum Ratings*
Storage Temperature........................-30°C to +70°C
Ambient Temperature with
Power Applied................................... -10°C to +70°C
Voltage with
Respect to Ground, All pins
(1)
V
............................................... -2.0 V to +7.0 V
CC
Output Short Cir c uit Current
(1)
.......... -2.0 V to +7.0 V
(2)
....................-200 mA
AT5FC004
*NOTICE: Stresses beyond those listed under "Absolute Maximum
Ratings" may cause perm an en t dam ag e to the card . T his is a stress
rating only and functional operation of the card at these or any
other conditions beyond those indicated in the
operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transients, inputs may overshoot V
up to 20 ns. Maximum DC voltage on output and I/O pins is
V
+0.5 V. During voltage transitions, outputs may overshoot to
CC
V
+2.0 V for periods up to 20 ns.
CC
2. No more than one output shorted at a time. Durati on of the short circuit should not be greater than one second. Conditions equal
V
= 0.5 V or 5.0 V, VCC = Max.
OUT
to -2.0 V for periods of
SS
D.C. and A.C. Operating Range
AT5FC004-20
o
Operating Temperature (Case)Com.0
Power Supply5 V ± 5%
V
CC
Pin Capacitance
(f = 1 MHz, T = 25°C)
(1)
SymbolParameterConditionsTypMaxUnits
C
IN1
C
OUT
C
IN2
C
I/O
Note: 1. This parameter is characterized and is not 100% tested.
Control CapacitanceVIN = 0 (CE)45pF
I/O CapacitanceV
= 0 V20pF
I/O
C - 70oC
3
PC Card Pin Assignments
I = Input, O = Output, I/O = Bi-directional, NC = No Connect
PinSignalI/OFunction
1GNDGround
2D3I/OData Bit 3
3D4I/OData Bit 4
4D5I/OData Bit 5
5D6I/OData Bit 6
6D7I/OData Bit 7
7
CE
1
ICard Enable 1
8A10IAddress Bit 10
9
OEIOutput Enable
10A11IAddress Bit 11
11A9IAddress Bi t 9
12A8IAddress Bi t 8
13A13IAddress Bit 13
14A14IAddress Bit 14
15
WEIWrite Enable
16NCNo Connect
17V
CC
Power Supply
18NCNo Connect
19A16IAddress Bit 16
20A15IAddress Bit 15
21A12IAddress Bit 12
22A7IAddress Bi t 7
23A6IAddress Bi t 6
24A5IAddress Bi t 5
25A4IAddress Bi t 4
26A3IAddress Bi t 3
27A2IAddress Bi t 2
28A1IAddress Bi t 1
29A0IAddress Bi t 0
30D0I/OData Bit 0
31D1I/OData Bit 1
32D2I/OData Bit 2
33WPOWrite Protect
34GNDGround
(1)
(1)
PinSignalI/OFunction
35GNDGroun d
36
CD
1
OCard Detect 1
37D11I/OData Bit 11
38D12I/OData Bit 12
39D13I/OData Bit 13
40D14I/OData Bit 14
41D15I/OData Bit 15
42
CE
2
ICard Enable 2
43NCNo Connect
44RFUReserved
45RFUReserved
46A17IAddress Bit 17
47A18IAddress Bit 18
48A19IAddress Bit 19
49A20IAddress Bit 20
50NCNo Connect
51V
64D8I/OData Bit 8
65D9I/OData Bit 9
66D10I/OData Bit 10
67
CD
2
OCard Detect 2
68GNDGroun d
(1)
(1)
(2)
(2)
(1)
Notes: 1. Signal must not be connected between cards.
BVD = Internally pul led up.
2.
4AT5FC004
AT5FC004
Pin Description
SymbolNameTypeFunction
A0-A21Address InputsInputAddress Inputs are internally latched during write cycles.
Data Input/Outputs are internally latched on write cycles.
D0-D15Data Input/Output
CE1, CE
2
Card EnableInput
Input/Output
Data outputs are latched during read cycles. Data pins
are active high. Whe n the memory card is de-selected or
the outputs are dis ab led the outputs float to tri-state.
Card Enable is active low. The memory card is
de-selected and power consumption is reduced to
standby levels whe n
memory card circuitry that controls the high and low byte
control logic o f the card, input buffers, segment decoders,
and associated memory devices.
CE is high. CE activates the internal
OEOutput EnableInput
WEWrite Enable Input
V
CC
GNDGroundGround
CD1, CD
WPWrite ProtectOutput
NCNo ConnectCorresponding pin is not connected internally.
BVD1, BVD
REGRegister SelectInput
2
PC Card Power
Supply
Card DetectOutput
Battery Voltage DetectOutputInternally pulled up. (There is no battery in the card.)
2
Output Enable is active low and enables the data buffers
through the card outputs during read cycles.
Write Enable is active low and controls th e write function
to the memory arra y. The target address is latched on the
falling edge of the
latched on the rising edge of the pulse.
PC Card Power Supply for device operation
(5.0 V ± 5%)
When Card Detect 1 and 2 = Ground the system detects
the card.
Write Protect is active high and indicate s that all card
write operations are disabled by the write protect switch.
Provide access to Card Information Structure in the
Attribute Memory Device
WE pulse and the appropriate data is
5
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