ATMEL AT59C22W-10SI-2.5, AT59C22W-10SC-2.7, AT59C22W-10SC-2.5, AT59C22W-10SC, AT59C22-10PI-2.7 Datasheet

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Features
Low Voltage and Standard Voltage Operation
– 5.0 (VCC = 4.5V to 5.5V) – 2.7 (VCC = 2.7V to 5.5V) – 2.5 (VCC = 2.5V to 5.5V)
– 1K: 128 x 8 or 64 x 16 – 2K: 256 x 8 or 128 x 16 – 4K: 512 x 8 or 256 x 16
4-Wire Serial Interface
Self-Timed Write Cycle (10 ms max)
High Reliability
– Endurance: 1 Million Write Cycles – Data Retention: 100 Years – ESD Protection: >4000V
8-Pin PDIP and 8-Pin EIAJ SOIC Packages
4-Wire Serial EEPROMs
1K (128 x 8 or 64 x 16)
Description
The AT59C11/22/13 provides 1024/2048/4096 bits of serial EEPROM (Electrically Erasable Programmable R ead Only Mem ory) organ ized as 64/128 /256 words of 16 bits each, when the ORG Pin is connecte d to V each when it is tied to ground. The devic e is optimiz ed for use in many in dustrial an d commercial applications where low power and low voltage operation are essential. The AT59C11/22/13 is available in space saving 8-pin PDIP and 8-pin EIAJ SOIC packages.
The AT59C11/22/13 is enabled through the Chi p S el ec t pi n (CS ) , a nd ac ces sed via a 4-wire serial interf ace consis ting of Data In put (DI), Data O utput (DO), a nd Clock (CLK). Upon receiving a RE AD i nstr uc tion at DI, the a ddr ess is dec od ed an d th e dat a is clocked out ser ially on th e data output pin DO, th e WR ITE cycl e is complet ely self­timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is only enabled when the p art is i n the ERASE/W RITE E NABLE state. Ready /Busy tus can be monitored upon completion of a programm ing operation by polling th e Ready/Busy
The AT59C11/22/13 is available in 5.0 V ± 10%, 2.7V to 5.5 V and 2.5V to 5.5V ver­sions.
pin.
and 128/256/512 wor ds of 8 bits
CC
sta-
Pin Configurations
Pin Name Function
CS Chip Select CLK Serial Data Clock
8-Pin PDIP
2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
AT59C11 AT59C22 AT59C13
4-Wire, 1K Serial E
2
PROM
DI Serial Data Input DO Serial Data Output GND Ground V
CC
ORG Internal Organization RDY/BUSY
Power Supply
Status Output
8-Pin SOIC
Rev. 0173K–07/98
1
Absolute Maximum Ratings*
Operating Temperature.................................. -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground.....................................-1.0V to +7.0V
Maximum Operating Voltage........................................... 6.25V
DC Output Current........................................................5 .0 mA
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam­age to the de vic e. T his is a stres s r ating o nly an d functional opera tion of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reli abi li ty
Block Diagram
(1)
Note: 1. When the ORG pin is connected to VCC, the x 16 org ani za tio n is selected. When it is connected to ground, the x 8 organiza-
tion is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x 16 organization.
2
AT59C11/22/13
AT59C11/22/13
Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Test Conditions Max Units Conditions
C
OUT
C
IN
Output Capacitance (DO) 5 pF V Input Capacitance (CS, CLK, DI, RDY/BUSY)5pFV
OUT
IN
= 0V
= 0V
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.5V to +5.5V,
= 0°C to +70°C, VCC = +2.5V to +5.5V (unless otherwise noted).
T
AC
Symbol Parameter T est Conditi on Min T yp Max Units
V
CC1
V
CC2
V
CC3
V
CC4
I
CC
I
SB1
I
SB2
I
SB3
I
IL
I
OL
(1)
V
IL1
(1)
V
IH1
(1)
V
IL2
(1)
V
IH2
V
OL1
V
OH1
V
OL2
V
OH2
Note: 1. V
Supply Voltage 1.8 5.5 V Supply Voltage 2.5 5.5 V Supply Voltage 2.7 5.5 V Supply Voltage 4.5 5.5 V Supply Current VCC = 5.0V READ at 1.0 MHz 0.5 2.0 mA
WRITE at 1.0 MHz 0.5 2.0 mA Standby Current VCC = 2.5V CS = 0V 6.0 10.0 µA Standby Current VCC = 2.7V CS = 0V 6.0 10.0 µA Standby Current VCC = 5.0V CS = 0V 21.0 30.0 µA Input Leakage VIN = 0V to VCC 0.1 1.0 µA Output Leakage VIN = 0V to VCC 0.1 1.0 µA Input Low Voltage
Input High Voltage Input Low Voltage
Input High Voltage Output Low Voltage
Output High Voltage Output Low Voltage
Output High Voltage
min and VIH max are reference only and are not tested.
IL
4.5V VCC 5.5V
2.5V VCC 2.7V
4.5V VCC 5.5V
2.5V VCC 2.7V
IOL = 2.1 mA
IOH = 0.4 mA 2.4
IOL = 0.15 mA
IOH = -0.1 mA VCC - 0.2
-0.6
2.0
-0.6
VCC x 0.7
0.8
VCC + 1
VCC x 0.3
VCC + 1
0.4 V
0.2 V
V
V
3
AC Characteristics
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +2.5V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Un it s
250 250 500
1000
250 250 500
1000
250 250 500
1000
50
50 100 200
100 100 200 400
100 100 200 400
0 0 0 0
1 1
0.5
0.25
250 250 500
1000
250 250 500
1000
250 250 500
1000
100 100 200 400
f
t
t
t
CLK
CKH
CKL
CS
CLK Clock Frequency
CLK High Time
CLK Low Time
Minimum CS Low Time
4.5V ≤ V
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
4.5V ≤ V
t
CSS
CS Setup Time Relative to SK
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
t
DIS
DI Setup Time Relative to SK
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
t
CSH
CS Hold Time Relative to SK 0 ns
4.5V ≤ V
t
DIH
DI Hold Time Relative to SK
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
t
PD1
Output Delay to ‘1’ AC Test
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
t
PD0
Output Delay to ‘0’ AC Test
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ V
t
RBD
RDY/BUSY Delay to Status Valid
AC Test
2.7V ≤ V
2.5V ≤ V
1.8V ≤ V
4.5V ≤ VCC ≤ 5.5V
t
CZ
CS to DO in High Impedance
AC Test CS = V
2.7V ≤ V
IL
2.5V ≤ V
1.8V ≤ V
t
WC
Endurance
Write Cycle Time 0.1 10 ms
(1)
5.0V, 25°C, Page Mode 1M Write Cycles
Note: 1. This paramter is characterized and is not 100% tested.
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
AT59C11/22/13
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