ATMEL AT49F002T-90VI, AT49F002NT-50VI, AT49F002T-90VC, AT49F002T-90TI, AT49F002T-90TC Datasheet
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Features
•
Single Voltage Operation
–5V Read
– 5V Reprogramming
•
Fast Read Access Time - 50 ns
•
Internal Program Control and Timer
•
Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (96K, 128K) Bytes
•
Fast Erase Cycle Time - 10 seconds
•
Byte By Byte Programming - 10
•
Hardware Data Protection
•
DAT A Polling For End Of Program Detection
•
Low Power Dissipation
µµµµ
s/Byte Typical
– 50 mA Active Current
µµµµ
– 100
•
Typical 10,000 Write Cycles
A CMOS Standby Curren t
Description
The AT49F002(N)(T) is a 5-volt-only in-system reprogrammable Flash Memory. Its 2
megabits of memory is orga nized as 262,144 words by 8 bits. Manufactured wit h
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 50
ns with power dissipation of just 275 mW over the commercial temperature range.
(continued)
2-Megabit
(256K x 8)
5-volt Only
Flash Memory
AT49F002
AT49F002N
AT49F002T
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE
OE
WE Write Enable
RESET
I/O0 - I/O7 Data Inputs/Outputs
DC Don’t Connect
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
Chip Enable
Output Enable
RESET
PLCC Top View
A12
A15
A16
RESET *
432
5
6
7
8
9
10
11
12
13
1
14151617181920
I/O1
I/O2
I/O3
GND
VCCWEA17
323130
29
28
27
26
25
24
23
22
21
I/O4
I/O5
I/O6
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
DIP Top View
A16
A15
A12
I/O0
I/O1
I/O2
GND
1
2
3
4
5
A7
6
A6
7
A5
8
A4
9
A3
10
A2
11
A1
12
A0
13
14
15
16
* RESET
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
A11
2
A9
3
A8
4
A13
5
A14
6
A17
7
WE
8
VCC
A16
A15
A12
9
10
11
12
13
A7
14
A6
15
A5
16
A4
* RESET
AT49F002NT
32
VCC
31
WE
30
A17
29
A14
28
A13
27
A8
26
A9
25
A11
24
OE
23
A10
22
CE
21
I/O7
20
I/O6
19
I/O5
18
I/O4
17
I/O3
OE
32
A10
31
CE
30
I/O7
29
I/O6
28
I/O5
27
I/O4
26
I/O3
25
GND
24
I/O2
23
I/O1
22
I/O0
21
A0
20
A1
19
A2
18
A3
17
Rev. 1017C–06/98
*Note: This pin is a DC on the AT49 F002N(T).
1
When the device is dese lecte d, the CMOS stan dby cu rren t
is less than 100 µA. For the AT49F002N(T) pin 1 for the
DIP and PLCC packages and pin 9 for the TSOP package
are don’t connect pins.
To allow for simple in-system reprogrammability, the
AT49F002(N)(T) does not require high input voltages for
programming. Five-volt-only commands determine the read
and programming operation o f the device. Readin g data
out of the device is similar to reading from an EPROM; it
has standard CE
, OE, and WE inputs to avoid bu s conte ntion. Reprogramming the AT49F002(N)(T) is performed by
erasing a block of data and then programming on a byte by
byte basis. The byte programming time is a fast 50 µs. The
end of a program cycle can be optionally detected by the
polling feature. Once the end of a byte program
DATA
cycle has been de tected, a new access for a rea d or program can begin. The typ ical numb er of prog ram and era se
cycles is in excess of 10,000 cycles.
Block Diagram
V
CC
GND
OE
WE
CE
RESET
ADDRESS
INPUTS
CONTROL
LOGIC
Y DECODER
X DECODER
The device is erased by execu ting the erase command
sequence; the device internally controls the erase operations. There are two 8K byte parameter block sect ions and
two main memory blocks.
The device has the capability to protect the data in the boot
block; this feature is enabled by a command sequence.
The 16K-byte boot block section includes a reprogramming
lock out feature to pr ovide data integrity. The boot s ec tor is
designed to contai n user secu re code, and whe n the feature is enabled, the boot sector is protected from being
reprogrammed.
In the AT49F002N(T), once the boot block programming
lockout feature is enabled, the contents of the boot block
are permanent and cannot be changed. In the
AT49F002(T), once the boot block programm ing lockout
feature is enabled, the contents of the boot block cannot be
changed with input voltage levels of 5.5 volts or less.
AT49F002(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
INPUT/OUTPUT
BUFFERS
PROGRAM
DATA LATCHES
Y-GATING
MAIN MEMORY
BLOCK 2
(128K BYTES)
MAIN MEMORY
BLOCK 1
(96K BYTES)
PARAMETER
BLOCK 2
(8K BYTES)
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
3FFFF
20000
1FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
AT49F002(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
INPUT/OUTPUT
BUFFERS
PROGRAM
DATA LATCHES
Y-GATING
BOOT BLOCK
(16K BYTES)
PARAMETER
BLOCK 1
(8K BYTES)
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(96K BYTES)
MAIN MEMORY
BLOCK 2
(128K BYTES)
3FFFF
3C000
3BFFF
3A000
39FFF
38000
37FFF
20000
1FFFF
00000
2
AT49F002(N)(T)
Device Operation
READ:
When CE
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE
control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES:
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table.
The command sequences are written by applying a low
pulse on the WE
tively) and OE
edge of CE
latched by the first rising edge of CE
microprocessor write timings are used. The address locations used in the command sequences are not affected by
entering the command sequences.
RESET:
tem application s. When RE SET
device is in its standa rd oper at ing mod e. A low l ev el on the
RESET
the outputs of the device in a high impedance state. If the
RESET
or erase operation, the operation may not be successfully
completed and the op eration wi ll have to be repeated af ter
a high level is applied to the RESET
is reasserted on the RESET
read or standby mode, depending upon the state of the
control inputs. By ap plying a 12 V ± 0 .5V in put si gnal t o th e
RESET
even if the boot block lock out feature has be en enabled
(see Boot Bl ock Prog rammi ng Locko ut Ov erride s ection ).
The RESET feature is not available for the AT49F002N(T).
ERASURE:
memory block or parameter block which contains the byte
must be erased. The erased state of th e memory bits is a
logical “1”. The entir e device c an be erased at one time by
using a 6-byte software code. T he software chip erase
code consists of 6-byte load commands to specific address
locations with a specific data pattern (please refer to the
Chip Erase Cycle Waveforms).
After the software c hi p e rase h as b een i niti ate d, the d evi c e
will internally time the er ase operation so that no e xternal
clocks are required. The maximum time needed to erase
the whole chip is t
been enabled, the data in the boot sector will not be
erased.
The AT49F002(N)(T) is accessed like an EPROM.
and OE are low and WE is high, the data stored
or OE is high. This dual-line
When the device is firs t pow-
or CE input with CE or WE low (respec-
high. The address is latched on the falling
or WE, whichever occurs last. The data is
or WE. Standard
A RESET
input halts the prese nt device oper ation and puts
pin makes a high to low transition during a program
pin, the boot block array can be reprogrammed
Before a byte can be reprogram med, the main
input pin is provided to ease some sys-
is at a logic high level, the
pin. When a high level
pin, the device returns to the
. If the boot block lockout feature has
EC
AT49F002(N)(T)
CHIP ERASE:
the Chip Erase function will erase Parameter Block 1,
Parameter Block 2, M ain Me mory B lock 1, a nd Mai n Memory Block 2 but not the boot block. If the Boot Block Lockout
has not been enabled, the Chip Erase function will erase
the entire chip. After the full chip erase the device will
return back to read mode. Any c omm and during chi p eras e
will be ignored.
SECTOR ERASE:
device is organized into sectors that can be individually
erased. There are two 8K-byte parameter block sections
and two main memory blocks. The 8K-byte parameter
block sections can be independently erased and reprogrammed. The two main memory sections are designed to
be used as alternative memory sectors. That is, whenever
one of the blocks has been erased and reprogra mme d, th e
other block should be erased and r eprogrammed be fore
the first block is again erased. The Sector Erase command
is a six bus cycle operation. The sector address is latched
on the falling WE
input command is latched at the ris ing edge of WE
sector erase starts after the rising edge of WE
cycle. The erase op eration is in ternally contr olled; it wil l
automatically time to completion.
BYTE PROGRAMMING:
erased, the device is programmed (to a logical “0”) on a
byte-by-byte ba sis. Pl ease n ote tha t a data “0” c annot b e
programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The device will automatic ally gen erate the required internal
program pulses.
The program cyc le has address es latched on the falling
edge of WE
latched on the rising edge of WE
first. Programming is completed after the specified t
time. The DATA
the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT:
has one designated block that has a programming lockout
feature. This feature prevents programming of data in th e
designated block once the feature has been enabled. The
size of the block is 16K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enablin g the l ockou t feature w ill al low the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be activated; the boot block’ s u sag e as a wr i te pro t ected r eg io n is
optional to the user. The address range of the boot block is
00000 to 03FFF for the AT49F002(N) while the address
If the boot block lockout has been enabled,
As an alternative to a full chip erase, the
edge of the sixth cycle while the 30H data
. The
of the sixth
Once the memory array is
or CE, whichever occurs last, and the data
or CE, whichever occurs
cycle
polling feature may also be used to indicate
BP
The device
3
range of the boot block is 3C000 to 3FFFF fo r the
AT49F002 (N )T.
Once the feature is enabled, the data in th e boot blo ck ca n
no longer be erased or prog rammed wi th inpu t voltage le vels of 5.5V or less. Data in the ma in memory blo ck ca n still
be changed through the regular programming method. To
activate the lockout feature, a seri es of six progra m commands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION:
method is available to determine if programming of the boot
block section is locked out. When the device is in the software product ident ification mode (s ee Software Produ ct
Identification Entry and Exit sections) a read from address
location 00002H will s how if pro gramm ing the bo ot block is
locked out for the AT49F002(N), and a read from address
location 3C002H will show if programming the boot block is
locked out for AT49F002(N)T. If the data on I/O0 is low, the
boot block can be progr ammed; i f the data on I/O0 i s high,
the program loc kout feature has been activate d and the
block cannot be programm ed. The softwar e product ident ification exit code should be used to return to standard
operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:
The user can override the boo t block prog rammin g lockout
by taking the RESET
tected boot block data can be altered through a chip erase,
sector erase or word programming. When the RESET
brought back to TTL levels the boot block programming
lockout feature is again acti ve. This featur e is not a vaila ble
on the AT49F002N(T).
pin to 12 volts. By doing this , pro-
A software
pin is
PRODUCT IDENTIFICATION:
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct programming algorithm for
the Atmel product.
For details, see O perat ing Mode s (for ha rdware operat ion)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING:
ing to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once
the program cycle has been completed, true data is valid
on all outputs and the n ext cycl e may begin . DATA
may begin at any time during the program cycle.
TOGGLE BIT:
AT49F002(N)(T) provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Exami ning the to ggle bit
may begin at any time during a program cycle.
HARDWARE DATA PROTECTION:
protect against inadvertent programs to the
AT49F002(N)(T) in the following ways: (a) V
is below 3.8V (typical), the program function is inhib-
V
CC
ited. (b) Program inhi bit: holding a ny one of OE
high or WE high inhibits progr am cycles. (c) No ise filter:
pulses of less than 15 ns (typical) on the WE
will not initiate a program cycle.
The AT49F002(N)(T) features DATA
In addition to DATA
The product identification
poll-
polling
polling the
Hardware features
sense: if
CC
low, CE
or CE inputs
4
AT49F002(N)(T)
AT49F002(N)(T)
Cycle
(1)
OUT
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
IN
6th Bus
Cycle
(4)
Command Definition (in Hex)
1st Bus
Command
Sequence
Read 1 Addr D
Chip Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Sector Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA
Byte Program 4 5555 AA 2AAA 55 5555 A0 Addr D
Boot Block Lockout
Product ID Entry 3 5555 AA 2AAA 55 5555 90
Product ID Exit
Product ID Exit
Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O7 - I/O0 (Hex)
(3)
(3)
2. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49F002(N) and 3C000H to 3FFFFH for the
AT49F002(N)T
3. Either one of the Product ID Exit commands can be used.
4. SA = sector addresses:
For the AT49F002(N):
SA = 00000 to 03FFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 04000 to 05FFF for PARAMETER BLOCK 1
SA = 06000 to 07FFF for PARAMETER BLOCK 2
SA = 08000 to 1FFFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 20000 to 3FFFF for MAIN MEMORY ARRAY BLOCK 2
Bus
Cycles
(2)
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
3 5555 AA 2AAA 55 5555 F0
1 XXXX F0
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Da ta
30
For the AT49F002(N)T:
SA = 3C000 to 3FFFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 3A000 to 3BFFF for PARAMETER BLOCK 1
SA = 38000 to 39FFF for PARAMETER BLOCK 2
SA = 20000 to 37FFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 00000 to IFFFF for MAIN MEMORY ARRAY BLOCK 2
Absolute Maximum Ratings*
Temperature Under Bias................................-55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
Voltage on OE
with Respect to Ground...................................-0.6V to +13.5V
+ 0.6V
CC
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at thes e or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
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