ATMEL AT49F002A, AT49F002AN, AT49F002AT, AT49F002ANT User Manual

Features

Single-voltage Operation
– 5V Read – 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)
Fast Erase Cycle Time – 4 Seconds
Byte-by-Byte Programming – 20 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 25 mA Active Current – 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Green (Pb/Halide-free) Packaging Option

1. Description

The AT49F002A(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 137 mW over the industrial temperature range.
2-megabit (256K x 8) 5-volt Only Flash Memory
AT49F002A AT49F002AN AT49F002AT AT49F002ANT
When the device is deselected, the CMOS standby current is less than 100 µA. For the AT49F002AN(T) pin 1 for the PLCC package and pin 9 for the TSOP package are no connect pins.
To allow for simple in-system reprogrammability, the AT49F002A(N)(T) does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is sim­ilar to reading from an EPROM; it has standard CE contention. Reprogramming the AT49F002A(N)(T) is performed by erasing a block of data and then programming on a byte-by-byte basis. The byte programming time is a fast 20 µs. The end of a program cycle can be optionally detected by the DATA feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device inter­nally controls the erase operations. There are two 8K byte parameter block sections, four main memory blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is enabled by a command sequence. The 16K-byte boot block section includes a repro­gramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is pro­tected from being reprogrammed.
, OE, and WE inputs to avoid bus
polling
3354F–FLASH–2/05
In the AT49F002A(N)(T), once the boot block programming lockout feature is enabled, the con­tents of the boot block are permanent and cannot be changed. In the AT49F002A(T), once the boot block programming lockout feature is enabled, the contents of the boot block cannot be changed with input voltage levels of 5.5 volts or less.

2. Pin Configurations

Pin Name Function
A0 - A17 Addresses

2.1 PLCC Top View

CE
Chip Enable
OE Output Enable
WE
RESET
Write Enable
RESET
I/O0 - I/O7 Data Inputs/Outputs
A12
A15
A16
RESET *
VCCWEA17
A7 A6 A5 A4 A3 A2 A1 A0
I/O0
432
5 6 7 8 9 10 11 12 13
14151617181920
I/O1
I/O2
GND
1
I/O3
323130
I/O4
I/O5
29 28 27 26 25 24 23 22 21
I/O6
A14 A13 A8 A9 A11 OE A10 CE I/O7
2.2 VSOP (8 x 14 mm) or TSOP Type 1 (8 x 20 mm) – Top View
1
A11
2
A9
3
A8
4
A13
5
A14
6
A17
7
WE
8
VCC
A16 A15 A12
9 10 11 12 13
A7
14
A6
15
A5
16
A4
* RESET
Note: *This pin is a NC on the AT49F002AN(T).
2
AT49F002A(N)(T)
OE
32
A10
31
CE
30
I/O7
29
I/O6
28
I/O5
27
I/O4
26
I/O3
25
GND
24
I/O2
23
I/O1
22
I/O0
21
A0
20
A1
19
A2
18
A3
17
3354F–FLASH–2/05

3. Block Diagram

AT49F002A(N)(T)
VCC GND
WE
RESET
ADDRESS
INPUTS
AT49F002A(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
OE
CE
CONTROL
LOGIC
Y DECODER
X DECODER
INPUT/OUTPUT
BUFFERS
PROGRAM
DATA LATCHES
Y-GATING
MAIN MEMORY
BLOCK 4
(64K BYTES)
MAIN MEMORY
BLOCK 3
(64K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
PARAMETER
BLOCK 2
(8K BYTES)
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
3FFFF
30000 2FFFF
20000 1FFFF
10000 0FFFF
08000 07FFF
06000 05FFF
04000 03FFF
00000
AT49F002A(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
INPUT/OUTPUT
BUFFERS
PROGRAM
DATA LATCHES
Y-GATING
BOOT BLOCK
(16K BYTES)
PARAMETER
BLOCK 1
(8K BYTES)
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
MAIN MEMORY
BLOCK 3
(64K BYTES)
MAIN MEMORY
BLOCK 4
(64K BYTES)
3FFFF
3C000 3BFFF
3A000 39FFF
38000 37FFF
30000 2FFFF
20000 1FFFF
10000 0FFFF
00000

4. Device Operation

4.1 Read

The AT49F002A(N)(T) is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the out­puts. The outputs are put in the high impedance state whenever CE control gives designers flexibility in preventing bus contention.

4.2 Command Sequences

When the device is first powered on, it will be reset to the read or standby mode depending upon the state of the control line inputs. In order to perform other device functions, a series of com­mand sequences are entered into the device. The command sequences are shown in the Command Definitions table. The command sequences are written by applying a low pulse on the
or CE input with CE or WE low (respectively) and OE high. The address is latched on the
WE falling edge of CE
or WE. Standard microprocessor write timings are used. The address locations used in the
CE command sequences are not affected by entering the command sequences.
or OE is high. This dual-line
or WE, whichever occurs last. The data is latched by the first rising edge of
3354F–FLASH–2/05
3

4.3 Reset

4.4 Erasure

A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET present device operation and puts the outputs of the device in a high impedance state. If the RESET may not be successfully completed and the operation will have to be repeated after a high level is applied to the RESET returns to the read or standby mode, depending upon the state of the control inputs. By applying a 12V ± 0.5V input signal to the RESET the boot block lockout feature has been enabled (see Boot Block Programming Lockout Over­ride section). The RESET feature is not available for the AT49F002AN(T).
Before a byte can be reprogrammed, the main memory block or parameter block which contains the byte must be erased. The erased state of the memory bits is a logical “1”. The entire device can be erased at one time by using a 6-byte software code. The software chip erase code con­sists of 6-byte load commands to specific address locations with a specific data pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device will internally time the erase opera­tion so that no external clocks are required. The maximum time needed to erase the whole chip is t erased.
pin makes a high to low transition during a program or erase operation, the operation
pin. When a high level is reasserted on the RESET pin, the device
pin, the boot block array can be reprogrammed even if
. If the boot block lockout feature has been enabled, the data in the boot sector will not be
EC
input halts the

4.4.1 Chip Erase

4.4.2 Sector Erase

If the boot block lockout has been enabled, the Chip Erase function will erase Parameter Block 1, Parameter Block 2, Main Memory Block 1-4 but not the boot block. If the Boot Block Lockout has not been enabled, the Chip Erase function will erase the entire chip. After the full chip erase the device will return back to read mode. Any command during chip erase will be ignored.
As an alternative to a full chip erase, the device is organized into sectors that can be individually erased. There are two 8K-byte parameter block sections and four main memory blocks. The 8K­byte parameter block sections and the four main memory blocks can be independently erased and reprogrammed. The Sector Erase command is a six bus cycle operation. The sector address is latched on the falling WE latched at the rising edge of WE cycle. The erase operation is internally controlled; it will automatically time to completion.
edge of the sixth cycle while the 30H data input command is
. The sector erase starts after the rising edge of WE of the sixth
4
AT49F002A(N)(T)
3354F–FLASH–2/05

4.5 Byte Programming

Once the memory array is erased, the device is programmed (to a logical “0”) on a byte-by-byte basis. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the internal device command register and is a 4 bus cycle operation (please refer to the Command Definitions table). The device will automatically generate the required internal program pulses.
AT49F002A(N)(T)
The program cycle has addresses latched on the falling edge of WE last, and the data latched on the rising edge of WE is completed after the specified t indicate the end of a program cycle.

4.6 Boot Block Programming Lockout

The device has one designated block that has a programming lockout feature. This feature pre­vents programming of data in the designated block once the feature has been enabled. The size of the block is 16K bytes. This block, referred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; the boot block’s usage as a write protected region is optional to the user. The address range of the boot block is 00000 to 03FFF for the AT49F002A(N) while the address range of the boot block is 3C000 to 3FFFF for the AT49F002A(N)T.
Once the feature is enabled, the data in the boot block can no longer be erased or programmed with input voltage levels of 5.5V or less. Data in the main memory block can still be changed through the regular programming method. To activate the lockout feature, a series of six pro­gram commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table.

4.6.1 Boot Block Lockout Detection

A software method is available to determine if programming of the boot block section is locked out. When the device is in the software product identification mode (see Software Product Iden­tification Entry and Exit sections) a read from address location 00002H will show if programming the boot block is locked out for the AT49F002A(N), and a read from address location 3C002H will show if programming the boot block is locked out for AT49F002A(N)T. If the data on I/O0 is low, the boot block can be programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be programmed. The software product identification exit code should be used to return to standard operation.
or CE, whichever occurs
or CE, whichever occurs first. Programming
cycle time. The DATA polling feature may also be used to
BP

4.6.2 Boot Block Programming Lockout Override

The user can override the boot block programming lockout by taking the RESET By doing this, protected boot block data can be altered through a chip erase, sector erase or word programming. When the RESET ming lockout feature is again active. This feature is not available on the AT49F002AN(T).
3354F–FLASH–2/05
pin to 12 volts.
pin is brought back to TTL levels the boot block program-
5

4.7 Product Identification

The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product.
For details, see Operating Modes (for hardware operation) or Software Product Identification. The manufacturer and device code is the same for both modes.

4.8 DATA Polling

The AT49F002A(N)(T) features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all out­puts and the next cycle may begin. DATA cycle.

4.9 Toggle Bit

In addition to DATA polling the AT49F002A(N)(T) provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle.
polling may begin at any time during the program

4.10 Hardware Data Protection

Hardware features protect against inadvertent programs to the AT49F002A(N)(T) in the following ways: (a) V (b) Program inhibit: holding any one of OE (c) Noise filter: pulses of less than 15 ns (typical) on the WE gram cycle.
sense: if VCC is below 3.8V (typical), the program function is inhibited.
CC
low, CE high or WE high inhibits program cycles.
or CE inputs will not initiate a pro-
6
AT49F002A(N)(T)
3354F–FLASH–2/05
Loading...
+ 14 hidden pages