ATMEL AT49BV160DT User Manual

BDTIC www.BDTIC.com/ATMEL

Features

Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 10 mA Active – 15 µA Standby
VPP Pin for Write Protection and Accelerated Program Operation
WP Pin for Sector Protection
RESET Input for Device Initialization
Flexible Sector Protection
TSOP Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging
16-megabit (1M x 16) 3-volt Only Flash Memory
AT49BV160D AT49BV160DT

1. Description

The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP package. The device has CE signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see “Flexible Sector Protection” on
page 6).
To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory.
The VPP pin provides data protection. When the V and erase functions are inhibited. When V and erase operations can be performed. With V Program Command) operation is accelerated.
PP
input is below 0.4V, the program
PP
is at 1.65V or above, normal program
at 10.0V, the program (Dual-word
PP
and OE control
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2. Pin Configurations

Pin Name Function
A0 - A19 Addresses
CE
OE
WE
RESET
VPP Write Protection
I/O0 - I/O15 Data Inputs/Outputs
NC No Connect
VCCQ Output Power Supply
WP

2.1 TSOP Top View (Type 1)

A15 A14 A13 A12 A11 A10
A9
A8 NC NC
WE
RESET
VPP
WP A19 A18 A17
A7 A6 A5 A4 A3 A2 A1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Chip Enable
Output Enable
Write Enable
Reset
Write Protect
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
A16 VCCQ GND I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0
2
AT49BV160D(T)
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3. Block Diagram

AT49BV160D(T)
I/O0 - I/O15
A0 - A19
INPUT
BUFFER
ADDRESS
LATCH
Y-DECODER
X-DECODER
OUTPUT BUFFER
OUTPUT
IDENTIFIER
MULTIPLEXER
COMPARATOR
MEMORY
REGISTER
STATUS
REGISTER
DATA
Y-GATING
MAIN
INPUT
BUFFER
DATA
REGISTER
COMMAND REGISTER
WRITE STATE
MACHINE
PROGRAM/ERASE VOLTAGE SWITCH
CE WE OE RESET WP
VPP
VCC GND

4. Device Operation

4.1 Command Sequences

When the device is first powered on, it will be in the read mode. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the “Command Definition Table” on page 15 (I/O8 - I/O15 are don’t care inputs for the command codes). The command sequences are written by applying a low pulse on the WE latched by the first rising edge of CE The address locations used in the command sequences are not affected by entering the com­mand sequences.

4.2 Read

When the AT49BV160D(T) is in the read mode, with CE and OE low and WE high, the data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high impedance state whenever CE gives designers flexibility in preventing bus contention.
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or CE input with CE or WE low (respectively) and OE high. The address and data are
or WE. Standard microprocessor write timings are used.
or OE is high. This dual-line control
3

4.3 Reset

A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET present device operation and puts the outputs of the device in a high impedance state. When a high level is reasserted on the RESET the state of the control inputs.

4.4 Erase

Before a word can be reprogrammed, it must be erased. The erased state of memory bits is a logical “1”. The individual sectors can be erased by using the Sector Erase command.

4.4.1 Sector Erase

The device is organized into 39 sectors (SA0 - SA38) that can be individually erased. The Sector Erase command is a two-bus cycle operation. The sector address and the D0H Data Input com­mand are latched on the rising edge of WE of the second cycle provided the given sector has not been protected. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is t
SEC
ing immediately.

4.5 Word Programming

Once a memory sector is erased, it is programmed (to a logical “0”) on a word-by-word basis. Programming is accomplished via the Internal Device command register and is a two-bus cycle operation. The device will automatically generate the required internal program pulses.
input halts the
pin, the device returns to the read mode, depending upon
. The sector erase starts after the rising edge of WE
. An attempt to erase a sector that has been protected will result in the operation terminat-

4.6 VPP Pin

Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase opera­tions can convert “0”s to “1”s. Programming is completed after the specified t program status bit is a “1”, the device was not able to verify that the program operation was per­formed successfully. The status register indicates the programming status. While the program sequence executes, status bit I/O7 is “0”. While programming, the only valid commands are Read Status Register, Program Suspend and Program Resume.
The circuitry of the AT49BV160D(T) is designed so that the device cannot be programmed or erased if the V erase operations can be performed. The VPP pin cannot be left floating.
voltage is less that 0.4V. When VPP is at 1.65V or above, normal program and
PP
cycle time. If the
BP
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AT49BV160D(T)
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4.7 Read Status Register

The status register indicates the status of device operations and the success/failure of that oper­ation. The Read Status Register command causes subsequent reads to output data from the status register until another command is issued. To return to reading from the memory, issue a Read command.
The status register bits are output on I/O7 - I/O0. The upper byte, I/O15 - I/O8, outputs 00H when a Read Status Register command is issued.
AT49BV160D(T)
The contents of the status register [SR7:SR0] are latched on the falling edge of OE (whichever occurs last), which prevents possible bus errors that might occur if status register contents change while being read. CE
or OE must be toggled with each subsequent status read,
or the status register will not indicate completion of a Program or Erase operation.
When the Write State Machine (WSM) is active, SR7 will indicate the status of the WSM; the remaining bits in the status register indicate whether the WSM was successful in performing the preferred operation (see Table 4-1).
Table 4-1. Status Register Bit Definition
WSMS ESS ES PS VPPS PSS SLS R
76543210
Notes
SR7 WRITE STATE MACHINE STATUS (WSMS) 1 = Ready 0 = Busy
SR6 = ERASE SUSPEND STATUS (ESS) 1 = Erase Suspended 0 = Erase In Progress/Completed
SR5 = ERASE STATUS (ES) 1 = Error in Sector Erase 0 = Successful Sector Erase
SR4 = PROGRAM STATUS (PS) 1 = Error in Programming 0 = Successful Programming
SR3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK
Check Write State Machine bit first to determine Word Program or Sector Erase completion, before checking program or erase status bits.
When Erase Suspend is issued, WSM halts execution and sets both WSMS and ESS bits to “1” – ESS bit remains set to “1” until an Erase Resume command is issued.
When this bit is set to “1”, WSM has applied the max number of erase pulses to the sector and is still unable to verify successful sector erasure.
When this bit is set to “1”, WSM has attempted but failed to program a word
The V level. The WSM interrogates VPP level only after the Program or Erase command sequences have been entered and informs the system if V before the operation is verified by the WSM.
status bit does not provide continuous indication of VPP
PP
has not been switched on. The VPP is also checked
PP
or CE
SR2 = PROGRAM SUSPEND STATUS (PSS) 1 = Program Suspended 0 = Program in Progress/Completed
SR1 = SECTOR LOCK STATUS (SLS) 1 = Prog/Erase attempted on a locked sector; Operation aborted. 0 = No operation to locked sectors
SR0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
Note: 1. A Command Sequence Error is indicated when SR1, SR3, SR4 and SR5 are set.
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When Program Suspend is issued, WSM halts execution and sets both WSMS and PSS bits to “1”. PSS bit remains set to “1” until a Program Resume command is issued.
If a Program or Erase operation is attempted to one of the locked sectors, this bit is set by the WSM. The operation specified is aborted and the device is returned to read status mode.
This bit is reserved for future use and should be masked out when polling the status register.
5

4.7.1 Clear Status Register

The WSM can set status register bits 1 through 7 and can clear bits 2, 6 and 7; but, the WSM cannot clear status register bits 1, 3, 4 or 5. Because bits 1, 3, 4 and 5 indicate various error con­ditions, these bits can be cleared only through the Clear Status Register command. By allowing the system software to control the resetting of these bits, several operations may be performed (such as cumulatively programming several addresses or erasing multiple sectors in sequence) before reading the status register to determine if an error occurred during those operations. The status register should be cleared before beginning another operation. The Read command must be issued before data can be read from the memory array. The status register can also be cleared by resetting the device.

4.8 Flexible Sector Protection

The AT49BV160D(T) offers two sector protection modes, the Softlock and the Hardlock. The Softlock mode is optimized as sector protection for sectors whose content changes frequently. The Hardlock protection mode is recommended for sectors whose content changes infrequently. Once either of these two modes is enabled, the contents of the selected sector is read-only and cannot be erased or programmed. Each sector can be independently programmed for either the Softlock or Hardlock sector protection mode. At power-up and reset, all sectors have their Soft­lock protection mode enabled.

4.8.1 Softlock and Unlock

The Softlock protection mode can be disabled by issuing a two-bus cycle Unlock command to the selected sector. Once a sector is unlocked, its contents can be erased or programmed. To enable the Softlock protection mode, a two-bus cycle Softlock command must be issued to the selected sector.

4.8.2 Hardlock and Write Protect

The Hardlock sector protection mode operates in conjunction with the Write Protect (WP The Hardlock sector protection mode can be enabled by issuing a two-bus cycle Hardlock Soft­ware command to the selected sector. The state of the Write Protect pin affects whether the Hardlock protection mode can be overridden.
• When the WP unlocked and the contents of the sector is read-only.
• When the WP unlocked via the Unlock command.
To disable the Hardlock sector protection mode, the chip must be either reset or power cycled.
) pin.
pin is low and the Hardlock protection mode is enabled, the sector cannot be
pin is high, the Hardlock protection mode is overridden and the sector can be
6
AT49BV160D(T)
3591C–FLASH–6/06
Table 4-2. Hardlock and Softlock Protection Configurations in Conjunction with WP
Erase/
Hard-
V
PP
/5V 0 0 0 Yes No sector is locked
V
CC
/5V 0 0 1 No
V
CC
WP
lock
Soft-
lock
Prog
Allowed? Comments
Sector is Softlocked. The Unlock command can unlock the sector.
AT49BV160D(T)
/5V 0 1 1 No
V
CC
Hardlock protection mode is enabled. The sector cannot be unlocked.
VCC/5V 1 0 0 Yes No sector is locked.
VCC/5V 1 0 1 No
V
/5V 1 1 0 Yes
CC
/5V 1 1 1 No
V
CC
V
IL
xxx No
Sector is Softlocked. The Unlock command can unlock the sector.
Hardlock protection mode is overridden and the sector is not locked.
Hardlock protection mode is overridden and the sector can be unlocked via the Unlock command.
Erase and Program Operations cannot be performed.
Figure 4-1. Sector Locking State Diagram
UNLOCKED LOCKED
WP = V
60h/
[000] [001]
=0
IL
D0h
6
0
h
/
2
60h/01h
F
h
60h/ 2Fh
[011]
Power-Up/Reset
Default
Hardlocked
WP = V
60h/ 2Fh
60h/
01h
60h/ 01h
[110]
=1
IH
[100]
60h/D0h
60h/ D0h
Hardlocked is disabled by
[111]
60h/ 2Fh
[101]
60h/D0h = Unlock Comm and 60h/01h = Softlock Comma nd 60h/2Fh = Hardlock Command
WP = V
Power-Up/Reset
Default
IH
Note: 1. The notation [X, Y, Z] denotes the locking state of a sector. The current locking state of a sector is defined by the state of WP
and the two bits of the sector-lock status D[1:0].
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4.8.3 Sector Protection Detection

A software method is available to determine if the sector protection Softlock or Hardlock features are enabled. When the device is in the software product identification mode, a read from the I/O0 and I/O1 at address location 00002H within a sector will show if the sector is unlocked, soft­locked, or hardlocked.
Table 4-3. Sector Protection Status
I/O1 I/O0 Sector Protection Status
0 0 Sector Not Locked
0 1 Softlock Enabled
1 0 Hardlock Enabled
1 1 Both Hardlock and Softlock Enabled

4.9 Erase Suspend/Erase Resume

The Erase Suspend command allows the system to interrupt a sector erase operation and then program or read data from a different sector within the memory. After the Erase Suspend com­mand is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase Suspend com­mand. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume com­mand is a one-bus cycle command. The only valid commands while erase is suspended are Read Status Register, Product ID Entry, CFI Query, Program, Program Resume, Erase Resume, Sector Softlock/Hardlock, Sector Unlock.

4.10 Program Suspend/Program Resume

The Program Suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory. After the Program Suspend command is given, the device requires a maximum of 10 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other word within the device. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same and the command sequence for the erase resume and program resume are the same. The only other valid commands while program is suspended are Read Status Register, Product ID Entry, CFI Query and Program Resume.

4.11 Product Identification

The product identification mode identifies the device and manufacturer as Atmel. It may be accessed a software operation. For details, see “Operating Modes” on page 19.
8
AT49BV160D(T)
3591C–FLASH–6/06

4.12 128-bit Protection Register

The AT49BV160D(T) contains a 128-bit register that can be used for security purposes in sys­tem design. The protection register is divided into two 64-bit sectors. The two sectors are designated as sector A and sector B. The data in sector A is non-changeable and is pro­grammed at the factory with a unique number. The data in sector B is programmed by the user and can be locked out such that data in the sector cannot be reprogrammed. To program sector B in the protection register, the two-bus cycle Program Protection Register command must be used as shown in the “Command Definition Table” on page 15. To lock out sector B, the two-bus cycle Lock Protection Register command must be used as shown in the “Command Definition
Table” . Data bit D1 must be zero during the second bus cycle. All other data bits during the sec-
ond bus cycle are don’t cares. To determine whether sector B is locked out, use the status of sector B protection command. If data bit D1 is zero, sector B is locked. If data bit D1 is one, sec­tor B can be reprogrammed. Please see the “Protection Register Addressing Table” on page 16 for the address locations in the protection register. To read the protection register, the Product ID Entry command is given followed by a normal read operation from an address within the pro­tection register. After determining whether sector B is protected or not, or reading the protection register, the Read command must be given to return to the read mode.

4.13 Common Flash Interface (CFI)

CFI is a published, standardized data structure that may be read from a flash device. CFI allows system software to query the installed device to determine the configurations, various electrical and timing parameters and functions supported by the device. CFI is used to allow the system to learn how to interface to the flash device most optimally. The two primary benefits of using CFI are ease of upgrading and second source availability. The command to enter the CFI Query mode is a one-bus cycle command which requires writing data 98h to any address. The CFI Query command can be written when the device is ready to read data or can also be written when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI data at the addresses given in “Common Flash Interface Definition Table” on page 24. To return to the read mode, issue the Read command.
AT49BV160D(T)

4.14 Hardware Data Protection

The Hardware Data Protection feature protects against inadvertent programs to the AT49BV160D(T) in the following ways: (a) V function is inhibited. (b) Program inhibit: holding any one of OE program cycles. (c) Program inhibit: V

4.15 Input Levels

While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE
and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the
device. The I/O lines can only be driven from 0 to V

4.16 Output Levels

For the AT49BV160D(T), output high levels (VOH) are equal to V
2.65V -3.6V output levels, V
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is less than V
PP
must be tied to VCC.
CCQ
sense: if VCC is below 1.8V (typical), the program
CC
low, CE high or WE high inhibits
.
ILPP
+ 0.6V.
CCQ
- 0.1V (not VCC). For
CCQ
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