• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Access Time – 70 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 10 µs
• Fast Sector Erase Time – 100 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 10 mA Active
– 15 µA Standby
• VPP Pin for Write Protection and Accelerated Program Operation
• WP Pin for Sector Protection
• RESET Input for Device Initialization
• Flexible Sector Protection
• TSOP Package
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)
• Green (Pb/Halide-free) Packaging
16-megabit
(1M x 16)
3-volt Only
Flash Memory
AT49BV160D
AT49BV160DT
1.Description
The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each. The memory is divided into 39 sectors for erase operations.
The device is offered in a 48-lead TSOP package. The device has CE
signals to avoid any bus contention. This device can be read or reprogrammed using
a single power supply, making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place
the device in other operation modes such as program and erase. The device has
the capability to protect the data in any sector (see “Flexible Sector Protection” on
page 6).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory.
The VPP pin provides data protection. When the V
and erase functions are inhibited. When V
and erase operations can be performed. With V
Program Command) operation is accelerated.
When the device is first powered on, it will be in the read mode. In order to perform other device
functions, a series of command sequences are entered into the device. The command
sequences are shown in the “Command Definition Table” on page 15 (I/O8 - I/O15 are don’t care
inputs for the command codes). The command sequences are written by applying a low pulse
on the WE
latched by the first rising edge of CE
The address locations used in the command sequences are not affected by entering the command sequences.
4.2Read
When the AT49BV160D(T) is in the read mode, with CE and OE low and WE high, the data
stored at the memory location determined by the address pins are asserted on the outputs. The
outputs are put in the high impedance state whenever CE
gives designers flexibility in preventing bus contention.
3591C–FLASH–6/06
or CE input with CE or WE low (respectively) and OE high. The address and data are
or WE. Standard microprocessor write timings are used.
or OE is high. This dual-line control
3
4.3Reset
A RESET input pin is provided to ease some system applications. When RESET is at a logic
high level, the device is in its standard operating mode. A low level on the RESET
present device operation and puts the outputs of the device in a high impedance state. When a
high level is reasserted on the RESET
the state of the control inputs.
4.4Erase
Before a word can be reprogrammed, it must be erased. The erased state of memory bits is a
logical “1”. The individual sectors can be erased by using the Sector Erase command.
4.4.1Sector Erase
The device is organized into 39 sectors (SA0 - SA38) that can be individually erased. The Sector
Erase command is a two-bus cycle operation. The sector address and the D0H Data Input command are latched on the rising edge of WE
of the second cycle provided the given sector has not been protected. The erase operation is
internally controlled; it will automatically time to completion. The maximum time to erase a sector
is t
SEC
ing immediately.
4.5Word Programming
Once a memory sector is erased, it is programmed (to a logical “0”) on a word-by-word basis.
Programming is accomplished via the Internal Device command register and is a two-bus cycle
operation. The device will automatically generate the required internal program pulses.
input halts the
pin, the device returns to the read mode, depending upon
. The sector erase starts after the rising edge of WE
. An attempt to erase a sector that has been protected will result in the operation terminat-
4.6VPP Pin
Any commands written to the chip during the embedded programming cycle will be ignored. If a
hardware reset happens during programming, the data at the location being programmed will be
corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after the specified t
program status bit is a “1”, the device was not able to verify that the program operation was performed successfully. The status register indicates the programming status. While the program
sequence executes, status bit I/O7 is “0”. While programming, the only valid commands are
Read Status Register, Program Suspend and Program Resume.
The circuitry of the AT49BV160D(T) is designed so that the device cannot be programmed or
erased if the V
erase operations can be performed. The VPP pin cannot be left floating.
voltage is less that 0.4V. When VPP is at 1.65V or above, normal program and
PP
cycle time. If the
BP
4
AT49BV160D(T)
3591C–FLASH–6/06
4.7Read Status Register
The status register indicates the status of device operations and the success/failure of that operation. The Read Status Register command causes subsequent reads to output data from the
status register until another command is issued. To return to reading from the memory, issue a
Read command.
The status register bits are output on I/O7 - I/O0. The upper byte, I/O15 - I/O8, outputs 00H
when a Read Status Register command is issued.
AT49BV160D(T)
The contents of the status register [SR7:SR0] are latched on the falling edge of OE
(whichever occurs last), which prevents possible bus errors that might occur if status register
contents change while being read. CE
or OE must be toggled with each subsequent status read,
or the status register will not indicate completion of a Program or Erase operation.
When the Write State Machine (WSM) is active, SR7 will indicate the status of the WSM; the
remaining bits in the status register indicate whether the WSM was successful in performing the
preferred operation (see Table 4-1).
Table 4-1.Status Register Bit Definition
WSMSESSESPSVPPSPSSSLSR
76543210
Notes
SR7 WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
SR6 = ERASE SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase In Progress/Completed
SR5 = ERASE STATUS (ES)
1 = Error in Sector Erase
0 = Successful Sector Erase
SR4 = PROGRAM STATUS (PS)
1 = Error in Programming
0 = Successful Programming
SR3 = VPP STATUS (VPPS)
1 = VPP Low Detect, Operation Abort
0 = VPP OK
Check Write State Machine bit first to determine Word Program
or Sector Erase completion, before checking program or erase
status bits.
When Erase Suspend is issued, WSM halts execution and sets
both WSMS and ESS bits to “1” – ESS bit remains set to “1” until
an Erase Resume command is issued.
When this bit is set to “1”, WSM has applied the max number of
erase pulses to the sector and is still unable to verify successful
sector erasure.
When this bit is set to “1”, WSM has attempted but failed to
program a word
The V
level. The WSM interrogates VPP level only after the Program or
Erase command sequences have been entered and informs the
system if V
before the operation is verified by the WSM.
status bit does not provide continuous indication of VPP
PP
has not been switched on. The VPP is also checked
PP
or CE
SR2 = PROGRAM SUSPEND STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
SR1 = SECTOR LOCK STATUS (SLS)
1 = Prog/Erase attempted on a locked sector; Operation aborted.
0 = No operation to locked sectors
SR0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
Note:1. A Command Sequence Error is indicated when SR1, SR3, SR4 and SR5 are set.
3591C–FLASH–6/06
When Program Suspend is issued, WSM halts execution and
sets both WSMS and PSS bits to “1”. PSS bit remains set to “1”
until a Program Resume command is issued.
If a Program or Erase operation is attempted to one of the locked
sectors, this bit is set by the WSM. The operation specified is
aborted and the device is returned to read status mode.
This bit is reserved for future use and should be masked out
when polling the status register.
5
4.7.1Clear Status Register
The WSM can set status register bits 1 through 7 and can clear bits 2, 6 and 7; but, the WSM
cannot clear status register bits 1, 3, 4 or 5. Because bits 1, 3, 4 and 5 indicate various error conditions, these bits can be cleared only through the Clear Status Register command. By allowing
the system software to control the resetting of these bits, several operations may be performed
(such as cumulatively programming several addresses or erasing multiple sectors in sequence)
before reading the status register to determine if an error occurred during those operations. The
status register should be cleared before beginning another operation. The Read command must
be issued before data can be read from the memory array. The status register can also be
cleared by resetting the device.
4.8Flexible Sector Protection
The AT49BV160D(T) offers two sector protection modes, the Softlock and the Hardlock. The
Softlock mode is optimized as sector protection for sectors whose content changes frequently.
The Hardlock protection mode is recommended for sectors whose content changes infrequently.
Once either of these two modes is enabled, the contents of the selected sector is read-only and
cannot be erased or programmed. Each sector can be independently programmed for either the
Softlock or Hardlock sector protection mode. At power-up and reset, all sectors have their Softlock protection mode enabled.
4.8.1Softlock and Unlock
The Softlock protection mode can be disabled by issuing a two-bus cycle Unlock command to
the selected sector. Once a sector is unlocked, its contents can be erased or programmed. To
enable the Softlock protection mode, a two-bus cycle Softlock command must be issued to the
selected sector.
4.8.2Hardlock and Write Protect
The Hardlock sector protection mode operates in conjunction with the Write Protect (WP
The Hardlock sector protection mode can be enabled by issuing a two-bus cycle Hardlock Software command to the selected sector. The state of the Write Protect pin affects whether the
Hardlock protection mode can be overridden.
• When the WP
unlocked and the contents of the sector is read-only.
• When the WP
unlocked via the Unlock command.
To disable the Hardlock sector protection mode, the chip must be either reset or power cycled.
) pin.
pin is low and the Hardlock protection mode is enabled, the sector cannot be
pin is high, the Hardlock protection mode is overridden and the sector can be
6
AT49BV160D(T)
3591C–FLASH–6/06
Table 4-2.Hardlock and Softlock Protection Configurations in Conjunction with WP
Erase/
Hard-
V
PP
/5V000YesNo sector is locked
V
CC
/5V001No
V
CC
WP
lock
Soft-
lock
Prog
Allowed?Comments
Sector is Softlocked. The Unlock command can
unlock the sector.
AT49BV160D(T)
/5V011No
V
CC
Hardlock protection mode is enabled. The sector
cannot be unlocked.
VCC/5V100YesNo sector is locked.
VCC/5V101No
V
/5V110Yes
CC
/5V111No
V
CC
V
IL
xxx No
Sector is Softlocked. The Unlock command can
unlock the sector.
Hardlock protection mode is overridden and the
sector is not locked.
Hardlock protection mode is overridden and the
sector can be unlocked via the Unlock command.
Erase and Program Operations cannot be
performed.
Figure 4-1.Sector Locking State Diagram
UNLOCKEDLOCKED
WP=V
60h/
[000][001]
=0
IL
D0h
6
0
h
/
2
60h/01h
F
h
60h/2Fh
[011]
Power-Up/Reset
Default
Hardlocked
WP=V
60h/2Fh
60h/
01h
60h/01h
[110]
=1
IH
[100]
60h/D0h
60h/D0h
Hardlockedisdisabledby
[111]
60h/2Fh
[101]
60h/D0h = Unlock Comm and
60h/01h = Softlock Comma nd
60h/2Fh = Hardlock Command
WP=V
Power-Up/Reset
Default
IH
Note:1. The notation [X, Y, Z] denotes the locking state of a sector. The current locking state of a sector is defined by the state of WP
and the two bits of the sector-lock status D[1:0].
3591C–FLASH–6/06
7
4.8.3Sector Protection Detection
A software method is available to determine if the sector protection Softlock or Hardlock features
are enabled. When the device is in the software product identification mode, a read from the
I/O0 and I/O1 at address location 00002H within a sector will show if the sector is unlocked, softlocked, or hardlocked.
Table 4-3.Sector Protection Status
I/O1I/O0Sector Protection Status
00Sector Not Locked
01Softlock Enabled
10Hardlock Enabled
11Both Hardlock and Softlock Enabled
4.9Erase Suspend/Erase Resume
The Erase Suspend command allows the system to interrupt a sector erase operation and then
program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase operation.
After the erase operation has been suspended, the system can then read data or program data
to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector
erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The only valid commands while erase is suspended are
Read Status Register, Product ID Entry, CFI Query, Program, Program Resume, Erase
Resume, Sector Softlock/Hardlock, Sector Unlock.
4.10Program Suspend/Program Resume
The Program Suspend command allows the system to interrupt a programming operation and
then read data from a different word within the memory. After the Program Suspend command is
given, the device requires a maximum of 10 µs to suspend the programming operation. After the
programming operation has been suspended, the system can then read data from any other
word within the device. An address is not required during the program suspend operation. To
resume the programming operation, the system must write the Program Resume command. The
program suspend and resume are one-bus cycle commands. The command sequence for the
erase suspend and program suspend are the same and the command sequence for the erase
resume and program resume are the same. The only other valid commands while program is
suspended are Read Status Register, Product ID Entry, CFI Query and Program Resume.
4.11Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It may be
accessed a software operation. For details, see “Operating Modes” on page 19.
8
AT49BV160D(T)
3591C–FLASH–6/06
4.12128-bit Protection Register
The AT49BV160D(T) contains a 128-bit register that can be used for security purposes in system design. The protection register is divided into two 64-bit sectors. The two sectors are
designated as sector A and sector B. The data in sector A is non-changeable and is programmed at the factory with a unique number. The data in sector B is programmed by the user
and can be locked out such that data in the sector cannot be reprogrammed. To program sector
B in the protection register, the two-bus cycle Program Protection Register command must be
used as shown in the “Command Definition Table” on page 15. To lock out sector B, the two-bus
cycle Lock Protection Register command must be used as shown in the “Command Definition
Table” . Data bit D1 must be zero during the second bus cycle. All other data bits during the sec-
ond bus cycle are don’t cares. To determine whether sector B is locked out, use the status of
sector B protection command. If data bit D1 is zero, sector B is locked. If data bit D1 is one, sector B can be reprogrammed. Please see the “Protection Register Addressing Table” on page 16
for the address locations in the protection register. To read the protection register, the Product
ID Entry command is given followed by a normal read operation from an address within the protection register. After determining whether sector B is protected or not, or reading the protection
register, the Read command must be given to return to the read mode.
4.13Common Flash Interface (CFI)
CFI is a published, standardized data structure that may be read from a flash device. CFI allows
system software to query the installed device to determine the configurations, various electrical
and timing parameters and functions supported by the device. CFI is used to allow the system to
learn how to interface to the flash device most optimally. The two primary benefits of using CFI
are ease of upgrading and second source availability. The command to enter the CFI Query
mode is a one-bus cycle command which requires writing data 98h to any address. The CFI
Query command can be written when the device is ready to read data or can also be written
when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI
data at the addresses given in “Common Flash Interface Definition Table” on page 24. To return
to the read mode, issue the Read command.
AT49BV160D(T)
4.14Hardware Data Protection
The Hardware Data Protection feature protects against inadvertent programs to the
AT49BV160D(T) in the following ways: (a) V
function is inhibited. (b) Program inhibit: holding any one of OE
program cycles. (c) Program inhibit: V
4.15Input Levels
While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE,
CE
and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the
device. The I/O lines can only be driven from 0 to V
4.16Output Levels
For the AT49BV160D(T), output high levels (VOH) are equal to V
2.65V -3.6V output levels, V
3591C–FLASH–6/06
is less than V
PP
must be tied to VCC.
CCQ
sense: if VCC is below 1.8V (typical), the program
CC
low, CE high or WE high inhibits
.
ILPP
+ 0.6V.
CCQ
- 0.1V (not VCC). For
CCQ
9
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