– 15 mA Active Current
– 40 µA CMOS Standby Current
• Fast Read Access Time – 120 ns
• Sector Program Operation
– Single-cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time – 20 ms Max
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option
1.Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 54 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less
than 40 µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
512K (64K x 8)
3-volt Only
Flash Memory
AT29LV512
To allow for simple in-system reprogrammability, the AT29LV512 does not require
high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an
EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes
of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are captured at
microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA
end of a program cycle has been detected, a new access for a read or program can
begin.
polling of I/O7. Once the
0177N–FLASH–2/05
2.Pin Configurations
Pin NameFunction
A0 - A15Addresses
CE
OE
WE
I/O0 - I/O7Data Inputs/Outputs
NCNo Connect
2.132-lead PLCC Top View
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
Chip Enable
Output Enable
Write Enable
A12
A15NCNC
432
5
6
7
8
9
10
11
12
13
14151617181920
I/O1
I/O2
GND
1
I/O3
VCCWENC
323130
29
28
27
26
25
24
23
22
21
I/O4
I/O5
I/O6
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
2.232-lead TSOP (Type 1) Top View
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
32
A10
31
CE
30
I/O7
29
I/O6
28
I/O5
27
I/O4
26
I/O3
25
GND
24
I/O2
23
I/O1
22
I/O0
21
A0
20
A1
19
A2
18
A3
17
2
AT29LV512
0177N–FLASH–2/05
3.Block Diagram
4.Device Operation
4.1Read
The AT29LV512 is accessed like an EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state whenever CE
line control gives designers flexibility in preventing bus contention.
AT29LV512
or OE is high. This dual-
4.2Software Data Protection Programming
The AT29LV512 has 512 individual sectors, each 128 bytes. Using the software data protection
feature, byte loads are used to enter the 128 bytes of a sector to be programmed. The
AT29LV512 can only be programmed or reprogrammed using the software data protection feature. The device is programmed on a sector basis. If a byte of data within the sector is to be
changed, data for the entire 128-byte sector must be loaded into the device. The AT29LV512
automatically does a sector erase prior to loading the data into the sector. An erase command is
not required.
Software data protection protects the device from inadvertent programming. A series of three
program commands to specific addresses with specific data must be presented to the device
before programming may occur. After writing the three-byte command sequence (and after t
the entire device is protected. The same three program commands must begin each program
operation. All software program commands must obey the sector program timing specifications.
Power transitions will not reset the software data protection feature; however, the software feature will guard against inadvertent program cycles during power transitions.
Any attempt to write to the device without the 3-byte command sequence will start the internal
write timers. No data will be written to the device; however, for the duration of t
tion will effectively be a polling operation.
After the software data protection’s 3-byte command code is given, a byte load is performed by
applying a low pulse on the WE
address is latched on the falling edge of CE
the first rising edge of CE
or WE.
),
WC
, a read opera-
WC
or CE input with CE or WE low (respectively) and OE high. The
or WE, whichever occurs last. The data is latched by
0177N–FLASH–2/05
3
The 128 bytes of data must be loaded into each sector. Any byte that is not loaded during the
programming of its sector will be erased to read FFh. Once the bytes of a sector are loaded into
the device, they are simultaneously programmed during the internal programming period. After
the first data byte has been loaded into the device, successive bytes are entered in the same
manner. Each new byte to be programmed must have its high-to-low transition on WE
within 150 µs of the low-to-high transition of WE
transition is not detected within 150 µs of the last low-to-high transition, the load period will end
and the internal programming period will start. A7 to A15 specify the sector address. The sector
address must be valid during each high-to-low transition of WE
byte address within the sector. The bytes may be loaded in any order; sequential loading is not
required. Once a programming operation has been initiated, and for the duration of t
operation will effectively be a polling operation.
4.3Hardware Data Protection
Hardware features protect against inadvertent programs to the AT29LV512 in the following
ways: (a) V
power on delay – once VCC has reached the VCC sense level, the device will automatically time
out 10 ms (typical) before programming; (c) Program inhibit – holding any one of OE
high or WE high inhibits program cycles; and (d) Noise filter – pulses of less than 15 ns (typical)
on the WE
CC
or CE inputs will not initiate a program cycle.
4.4Input Levels
While operating with a 3.3V ±10% power supply, the address inputs and control inputs (OE, CE
and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device.
The I/O lines can only be driven from 0 to 3.6 volts.
(or CE)
(or CE) of the preceding byte. If a high-to-low
(or CE). A0 to A6 specify the
, a read
WC
sense – if VCC is below 1.8V (typical), the program function is inhibited; (b) V
low, CE
CC
4.5Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It may be
accessed by hardware or software operation. The hardware operation mode can be used by an
external programmer to identify the correct programming algorithm for the Atmel product.
In addition, users may wish to use the software product identification mode to identify the part
(i.e., using the device code), and have the system software use the appropriate sector size for
program operations. In this manner, the user can have a common board design for 256K to
4-megabit densities and, with each density’s sector size in a memory map, have the system software apply the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
4.6DATA Polling
The AT29LV512 features DATA polling to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in the complement of the loaded data
on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the
next cycle may begin. DATA
polling may begin at any time during the program cycle.
4
AT29LV512
0177N–FLASH–2/05
4.7Toggle Bit
In addition to DATA polling, the AT29LV512 provides another method for determining the end of
a program or erase cycle. During a program or erase operation, successive attempts to read
data from the device will result in I/O6 toggling between one and zero. Once the program cycle
has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may
begin at any time during a program cycle.
4.8Optional Chip Erase Mode
The entire device can be erased by using a 6-byte software code. Please see Software Chip
Erase application note for details.
5.Absolute Maximum Ratings*
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
+ 0.6V
CC
AT29LV512
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Voltage on A9 (including NC Pins)
with Respect to Ground...................................-0.6V to +13.5V
0177N–FLASH–2/05
5
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