– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time – 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 300 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Green (Pb/Halide-free) Packaging Option
512K (64K x 8)
5-volt Only
Flash Memory
AT29 C512
1.Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just 275 mW over the industrial temperature range. When the device is deselected, the CMOS standby current is less
than 300 µA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C512 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are
loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the sector and then program
the latched data using an internal control timer. The end of a program cycle can be
detected by DATA
detected, a new access for a read or program can begin.
polling of I/O7. Once the end of a program cycle has been
The AT29C512 is accessed like an EPROM. When CE and OE are low and WE is high, the data
stored at the memory location determined by the address pins is asserted on the outputs. The
outputs are put in the high impedance state whenever CE
gives designers flexibility in preventing bus contention.
AT29C512
or OE is high. This dual-line control
4.2Byte Load
4.3Program
Byte loads are used to enter the 128 bytes of a sector to be programmed or the software codes
for data protection. A byte load is performed by applying a low pulse on the WE
CE
or WE low (respectively) and OE high. The address is latched on the falling edge of CE or
WE
, whichever occurs last. The data is latched by the first rising edge of CE or WE.
The device is reprogrammed on a sector basis. If a byte of data within a sector is to be changed,
data for the entire sector must be loaded into the device. Any byte that is not loaded during the
programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the
device, they are simultaneously programmed during the internal programming period. After the
first data byte has been loaded into the device, successive bytes are entered in the same manner. Each new byte to be programmed must have its high-to-low transition on WE
150 µs of the low-to-high transition of WE
tion is not detected within 150 µs of the last low-to-high transition, the load period will end and
the internal programming period will start. A7 to A15 specify the sector address. The sector
address must be valid during each high-to-low transition of WE
byte address within the sector. The bytes may be loaded in any order; sequential loading is not
required. Once a programming operation has been initiated, and for the duration of t
operation will effectively be a polling operation.
(or CE) of the preceding byte. If a high-to-low transi-
(or CE). A0 to A6 specify the
or CE input with
(or CE) within
, a read
WC
0456i–FLASH–9/08
3
4.4Software Data Protection
A software controlled data protection feature is available on the AT29C512. Once the software
protection is enabled a software algorithm must be issued to the device before a program may
be performed. The software protection feature may be enabled or disabled by the user; when
shipped from Atmel, the software data protection feature is disabled. To enable the software
data protection, a series of three program commands to specific addresses with specific data
must be performed. After the software data protection is enabled the same three program commands must begin each program cycle in order for the programs to occur. All software program
commands must obey the sector program timing specifications. Once set, the software data protection feature remains active unless its disable command is issued. Power transitions will not
reset the software data protection feature; however, the software feature will guard against inadvertent program cycles during power transitions.
Once set, software data protection will remain active unless the disable command sequence is
issued.
After setting SDP, any attempt to write to the device without the 3-byte command sequence will
start the internal write timers. No data will be written to the device; however, for the duration of
t
, a read operation will effectively be a polling operation.
WC
After the software data protection’s 3-byte command code is given, a byte load is performed by
applying a low pulse on the WE
address is latched on the falling edge of CE
the first rising edge of CE
same procedure as outlined in the program section under device operation.
or CE input with CE or WE low (respectively) and OE high. The
or WE, whichever occurs last. The data is latched by
or WE. The 128 bytes of data must be loaded into each sector by the
4.5Hardware Data Protection
Hardware features protect against inadvertent programs to the AT29C512 in the following ways:
(a) V
delay – once V
(typical) before programming; (c) Program inhibit – holding any one of OE
high inhibits program cycles; and (d) Noise filter – pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a program cycle.
sense – if VCC is below 3.8V (typical), the program function is inhibited; (b) VCC power on
CC
4.6Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It may be
accessed by hardware or software operation. The hardware operation mode can be used by an
external programmer to identify the correct programming algorithm for the Atmel product. In
addition, users may wish to use the software product identification mode to identify the part (i.e.,
using the device code), and have the system software use the appropriate sector size for program operations. In this manner, the user can have a common board design for 256K to 4megabit densities and, with each density’s sector size in a memory map, have the system software apply the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
has reached the VCC sense level, the device will automatically time out 5 ms
CC
low, CE high or WE
4
AT29C512
0456i–FLASH–9/08
4.7DATA Polling
The AT29C512 features DATA polling to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in the complement of the loaded data
on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the
next cycle may begin. DATA
4.8Toggle Bit
In addition to DATA polling the AT29C512 provides another method for determining the end of a
program or erase cycle. During a program or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and zero. Once the program cycle has
completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin
at any time during a program cycle.
4.9Optional Chip Erase Mode
The entire device can be erased by using a 6-byte software code. Please see Software Chip
Erase application note for details.
5.Absolute Maximum Ratings*
Temperature Under Bias............................... -55° C to +125° C
Storage Temperature .................................... -65° C to +150° C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
+ 0.6V
CC
AT29C512
polling may begin at any time during the program cycle.
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
0456i–FLASH–9/08
5
6.DC and AC Operating Range
AT29C512-70AT29C512-90
Operating
Temperature (Case)
Industrial-40° C - 85° C-40° C - 85° C
VCC Power Supply5V ± 5%5V ± 10%
7.Operating Modes
ModeCEOEWEAiI/O
X
V
IL
V
IH
V
IH
(1)
ReadV
Program
(2)
5V Chip EraseV
Standby/Write InhibitV
IL
V
IL
IL
IH
Program InhibitXXV
Program InhibitXV
Output DisableXV
IL
IH
Product Identification
HardwareV
Software
(5)
IL
V
IL
Notes:1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. V
= 12.0V ± 0.5V.
H
4. Manufacturer Code: 1F, Device Code: 5D.
5. See details under Software Product Identification Entry/Exit.
V
IH
V
IL
V
IL
AiD
AiD
Ai
XXHigh Z
IH
X
XHigh Z
IL
IH
(3)
A0 = V
(3)
A0 = V
Manufacturer Code
IL
IH
Device Code
Manufacturer Code
Device Code
V
IH
A1-A15 = VIL, A9 = VH,
A0 = V
A0 = V
A1 - A15 = VIL, A9 = VH,
OUT
IN
(4)
(4)
(4)
(4)
8.DC Characteristics
SymbolParameterConditionMinMaxUnits
I
LI
I
LO
I
SB1
I
SB2
I
CC
V
IL
V
IH
V
OL
V
OH1
V
OH2
6
Input Load CurrentVIN = 0V to V
Output Leakage CurrentV
= 0V to V
I/O
VCC Standby Current CMOSCE = V
VCC Standby Current TTLCE = 2.0V to V
V
Active Currentf = 5 MHz; I
CC
- 0.3V to V
CC
OUT
CC
CC
CC
CC
= 0 mA50mA
Input Low Voltage0.8V
Input High Voltage2.0V
Output Low VoltageIOL = 2.1 mA0.45V
Output High VoltageIOH = -400 µA2.4V
Output High Voltage CMOSIOH = -100 µA; VCC = 4.5V4.2V
AT29C512
10µA
10µA
300µA
3mA
0456i–FLASH–9/08
9.AC Read Characteristics
SymbolParameter
t
t
t
t
t
ACC
CE
OE
DF
OH
(1)
(2)
(3)(4)
Address to Output Delay7090ns
CE to Output Delay7090ns
OE to Output Delay035040ns
CE or OE to Output Float010025ns
Output Hold from OE, CE or Address,
whichever occurred first
AT29C512
AT29C512-70AT29C512-90
UnitsMinMaxMinMax
00ns
10. AC Read Waveforms
Notes:1. CE may be delayed up to t
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by t
without impact on t
3. t
is specified from OE or CE whichever occurs first (CL = 5 pF).
DF
4. This parameter is characterized and is not 100% tested.
ACC
.
(1)(2)(3)(4)
- tCE after the address transition without impact on t
ACC
ACC
.
- tOE after an address change
ACC
0456i–FLASH–9/08
7
11. Input Test Waveforms and Measurement Level
tR, tF < 5 ns
OUTPUT
PIN
5.0V
30pF
1.8K
1.3K
OUTPUT
PIN
5.0V
100pF
1.8K
1.3K
70 ns90/120/150 ns
12. Output Test Load
13. Pin Capacitance
f = 1 MHz, T = 25°C
SymbolTypMaxUnitsConditions
C
IN
C
OUT
Note:1. This parameter is characterized and is not 100% tested.
(1)
46pFV
812pFV
IN
OUT
= 0V
= 0V
8
AT29C512
0456i–FLASH–9/08
AT29C512
t
DH
t
DS
t
AS
t
AH
t
WP
CE
ADDRESS
DATA IN
OE
t
OES
t
OEH
WE
t
CS
t
CH
t
WPH
t
DH
t
DS
t
AS
t
AH
t
WP
WE
ADDRESS
DATA IN
OE
t
OES
t
OEH
CE
t
CS
t
CH
t
WPH
14. AC Byte Load Characteristics
SymbolParameterMinMaxUnits
, t
t
AS
OES
t
AH
t
CS
t
CH
t
WP
t
DS
t
, t
DH
OEH
t
WPH
15. AC Byte Load Waveforms
15.1WE Controlled
Address, OE Set-up Time0ns
Address Hold Time50ns
Chip Select Set-up Time0ns
Chip Select Hold Time0ns
Write Pulse Width (WE or CE)90ns
Data Set-up Time35ns
Data, OE Hold Time0ns
Write Pulse Width High100ns
15.2CE
0456i–FLASH–9/08
Controlled
9
16. Program Cycle Characteristics
SymbolParameterMinMaxUnits
t
WC
t
AS
t
AH
t
DS
t
DH
t
WP
t
BLC
t
WPH
Write Cycle Time10ms
Address Set-up Time0ns
Address Hold Time50ns
Data Set-up Time35ns
Data Hold Time0ns
Write Pulse Width 90ns
Byte Load Cycle Time150µs
Write Pulse Width High100ns
17. Program Cycle Waveforms
A0-A6
A7-A5
(1)(2)(3)
126
127
Notes:1. A7 through A15 must specify the sector address during each high-to-low transition of WE (or CE).
2. OE
must be high when WE and CE are both low.
3. All bytes that are not loaded within the sector being programmed will be indeterminate.
10
AT29C512
0456i–FLASH–9/08
AT29C512
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
LOAD DATA
TO
SECTOR (128 BYTES)
(4)
WRITES ENABLED
ENTER DATA
PROTECT STATE
(2)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 20
TO
ADDRESS 5555
LOAD DATA
TO
SECTOR (128 BYTES)
(4)
EXIT DATA
PROTECT STATE
(3)
OE
(1)
CE
WE
DATA
(3)
BYTE 0BYTE 126BYTE 127
t
DH
t
BLC
t
DS
t
WP
t
WPH
t
AH
A0-A6
A7-A15
(2)
t
WC
55552AAA5555
AA55A0
t
AS
SECTORADDRESS
BYTE ADDRESS
18. Software Data Protection
Enable Algorithm
(1)
19. Software Data Protection
Disable Algorithm
(1)
Notes:1. Data Format: I/O7 - I/O0 (Hex);Address Format: A14
20. Software Protected Program Cycle Waveform
Notes:1. A7 through A15 must specify the sector address during each high-to-low transition of WE (or CE) after the software code has
0456i–FLASH–9/08
- A0 (Hex).
2. Data Protect state will be activated at end of program
cycle.
3. Data Protect state will be deactivated at end of program period.
4. 128 bytes of data MUST BE loaded.
(1)(2)(3)
been entered.
2. OE
3. All bytes that are not loaded within the sector being programmed will be indeterminate.
must be high when WE and CE are both low.
11
21. Data Polling Characteristics
WE
CE
OE
I/O6
(2)
t
OEH
HIGH Z
t
DH
t
OE
t
WR
(1)
SymbolParameterMinTypMaxUnits
t
DH
t
OEH
t
OE
t
WR
Data Hold Time10ns
OE Hold Time10ns
OE to Output Delay
(2)
Write Recovery Time0ns
Notes:1. These parameters are characterized and not 100% tested.
2. See t
spec in AC Read Characteristics.
OE
22. Data Polling Waveforms
ns
23. Toggle Bit Characteristics
(1)
SymbolParameterMinTypMaxUnits
t
DH
t
OEH
t
OE
t
OEHP
t
WR
Data Hold Time10ns
OE Hold Time10ns
OE to Output Delay
(2)
OE High Pulse150ns
Write Recovery Time0ns
Notes:1. These parameters are characterized and not 100% tested.
2. See t
24. Toggle Bit Waveforms
spec in AC Read Characteristics.
OE
(1)(2)(3)
ns
Notes:1. Toggling either OE or CE or both OE and CE will operate toggle bit.
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
Notes:1. This package conforms to JEDEC reference MS-016, Variation AE.
2. Dimensions D1 and E1 do not include mold protrusion.
Allowable protrusion is .010"(0.254 mm) per side. Dimension D1
and E1 include mold mismatch and are measured at the extreme
material condition at the upper or lower parting line.
3. Lead coplanarity is 0.004" (0.102 mm) maximum.
A3.175–3.556
A11.524–2.413
A2 0.381––
D12.319–12.573
D111.354–11.506 Note 2
D29.906–10.922
E14.859–15.113
E113.894–14.046 Note 2
E212.471–13.487
B0.660–0.813
B10.330– 0.533
e1.270 TYP
29.132J – PLCC
16
AT29C512
0456i–FLASH–9/08
29.232T – TSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE
DRAWING NO.
R
REV.
32T, 32-lead (8 x 20 mm Package) Plastic Thin Small Outline
Package, Type I (TSOP)
B
32T
10/18/01
PIN 1
D1
D
Pin 1 Identifier
b
e
E
A
A1
A2
0º ~ 8º
c
L
GAGE PLANE
SEATING PLANE
L1
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
NOM
MAX
NOTE
Notes:1. This package conforms to JEDEC reference MO-142, Variation BD.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
A––1.20
A10.05–0.15
A20.951.001.05
D19.8020.0020.20
D118.3018.4018.50Note 2
E7.908.008.10Note 2
L0.500.600.70
L10.25 BASIC
b0.170.220.27
c0.10– 0.21
e0.50 BASIC
AT29C512
0456i–FLASH–9/08
17
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