ATMEL AT29BV010A User Manual

BDTIC www.BDTIC.com/ATMEL

Features

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time – 120 ns

Low Power Dissipation

15 mA Active Current

50 µA CMOS Standby Current

Sector Program Operation

Single Cycle Reprogram (Erase and Program)

1024 Sectors (128 Bytes/Sector)

Internal Address and Data Latches for 128 Bytes

Two 8K Bytes Boot Blocks with Lockout

Fast Sector Program Cycle Time – 20 ms Max

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Green (Pb/Halide-free) Packaging Option

1. Description

The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times to 120 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s Low Voltage Flash family of products.

To allow for simple in-system reprogrammability, the AT29BV010A does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29BV010A is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin.

1-Megabit

(128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT29BV010A

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2. Pin Configurations

 

Pin Name

Function

 

 

 

 

A0 - A16

Addresses

 

 

 

 

 

 

 

 

 

 

 

Chip Enable

 

CE

 

 

 

 

 

 

 

 

 

 

Output Enable

 

OE

 

 

 

 

 

 

 

 

 

Write Enable

 

WE

 

 

 

 

I/O0 - I/O7

Data Inputs/Outputs

 

 

 

 

NC

No Connect

 

 

 

 

 

 

2.132-lead PLCC Top View

 

A12

 

4

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

I/O0

13

 

14

 

I/O1

A15

A16

NC

VCC

 

WE

 

3

2

1

32

31

15

16

17

18

19

I/O2

GND

I/O3

I/O4

I/O5

NC

 

 

 

 

30

A14

29

28

A13

27

A8

26

A9

25

A11

24

 

 

 

 

OE

23

A10

22

 

 

 

CE

21

I/O7

20

 

 

 

 

I/O6

 

 

 

 

2.232-lead TSOP (Type 1) Top View

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A11

 

1

32

 

OE

 

A9

 

2

31

 

A10

 

 

 

A8

 

3

30

 

 

 

 

 

 

 

CE

A13

 

4

29

 

I/O7

 

 

A14

 

5

28

 

I/O6

 

 

 

NC

 

6

27

 

I/O5

 

 

 

 

 

 

7

26

 

I/O4

WE

 

 

VCC

 

8

25

 

I/O3

 

 

 

NC

 

9

24

 

GND

 

 

A16

 

10

23

 

I/O2

 

 

A15

 

11

22

 

I/O1

 

 

A12

 

12

21

 

I/O0

 

 

 

A7

 

13

20

 

A0

 

 

 

A6

 

14

19

 

A1

 

 

 

A5

 

15

18

 

A2

 

 

 

A4

 

16

17

 

A3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 AT29BV010A

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ATMEL AT29BV010A User Manual

AT29BV010A

3. Block Diagram

4. Device Operation

4.1Read

The AT29BV010A is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention.

4.2Software Data Protection Programming

The AT29BV010A has 1024 individual sectors, each 128 bytes. Using the software data protection feature, byte loads are used to enter the 128 bytes of a sector to be programmed. The AT29BV010A can only be programmed or reprogrammed using the software data protection feature. The device is programmed on a sector basis. If a byte of data within the sector is to be changed, data for the entire 128-byte sector must be loaded into the device. The data in any byte that is not loaded during the programming of its sector will be indeterminate. The AT29BV010A automatically does a sector erase prior to loading the data into the sector. An erase command is not required.

Software data protection protects the device from inadvertent programming. A series of three program commands to specific addresses with specific data must be presented to the device before programming may occur. The same three program commands must begin each program operation. All software program commands must obey the sector program timing specifications. Power transitions will not reset the software data protection feature, however the software feature will guard against inadvertent program cycles during power transitions.

Any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, a read operation will effectively be a polling operation.

After the software data protection’s 3-byte command code is given, a byte load is performed by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE.

3

0519F–FLASH–9/08

The 128 bytes of data must be loaded into each sector. Any byte that is not loaded during the programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the device, they are simultaneously programmed during the internal programming period. After the first data byte has been loaded into the device, successive bytes are entered in the same manner. Each new byte to be programmed must have its high to low transition on WE (or CE) within 150 μs of the low to high transition of WE (or CE) of the preceding byte. If a high to low transition is not detected within 150 μs of the last low to high transition, the load period will end and the internal programming period will start. A7 to A16 specify the sector address. The sector address must be valid during each high to low transition of WE (or CE). A0 to A6 specify the byte address within the sector. The bytes may be loaded in any order; sequential loading is not required.

4.3Hardware Data Protection

Hardware features protect against inadvertent programs to the AT29BV010A in the following ways: (a) VCC sense—if VCC is below 2.0V (typical), the program function is inhibited; (b) VCC power on delay—once VCC has reached the VCC sense level, the device will automatically time

out 10 ms (typical) before programming; (c) Program inhibit—holding any one of OE low, CE high or WE high inhibits program cycles; and (d) Noise filter— pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.

4.4Input Levels

While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.

4.5Product Identification

The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. In addition, users may wish to use the software product identification mode to identify the part (i.e. using the device code), and have the system software use the appropriate sector size for program operations. In this manner, the user can have a common board design for 256K to 4- megabit densities and, with each density’s sector size in a memory map, have the system software apply the appropriate sector size.

For details, see Operating Modes (for hardware operation) or Software Product Identification.

The manufacturer and device code is the same for both methods of identification.

4.6DATA Polling

The AT29BV010A features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. DATA polling may begin at any time during the program cycle.

4.7Toggle Bit

In addition to DATA polling the AT29BV010A provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle.

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AT29BV010A

4.8Optional Chip Erase Modes

The entire device may be erased by using a 6-byte software code. Please see Software Chip Erase application note for details.

4.9Boot Block Programming Lockout

The AT29BV010A has two designated memory blocks that have a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. Each of these blocks consists of 8K bytes; the programming lockout feature can be set independently for either block. While the lockout feature does not have to be activated, it can be activated for either or both blocks.

These two 8K memory sections are referred to as boot blocks. Secure code which will bring up a system can be contained in a boot block. The AT29BV010A blocks are located in the first 8K bytes of memory and the last 8K bytes of memory. The boot block programming lockout feature can therefore support systems that boot from the lower addresses of memory or the higher addresses. Once the programming lockout feature has been activated, the data in that block can no longer be erased or programmed; data in other memory locations can still be changed through the regular programming methods. To activate the lockout feature, a series of seven program commands to specific addresses with specific data must be performed. Please see Boot Block Lockout Feature Enable Algorithm.

If the boot block lockout feature has been activated on either block, the chip erase function will be disabled.

4.9.1Boot Block Lockout Detection

A software method is available to determine whether programming of either boot block section is locked out. See Software Product Identification Entry and Exit sections. When the device is in the software product identification mode, a read from location 00002H will show if programming the lower address boot block is locked out while reading location 1FFF2H will do so for the upper boot block. If the data is FE, the corresponding block can be programmed; if the data is FF, the program lockout feature has been activated and the corresponding block cannot be programmed. The software product identification exit mode should be used to return to standard operation.

5. Absolute Maximum Ratings*

...............................Temperature Under Bias

-55° C to +125° C

*NOTICE: Stresses beyond those listed under “Absolute

 

 

 

 

Maximum Ratings” may cause permanent dam-

Storage Temperature

-65

°

°

age to the device. This is a stress rating only and

 

C to +150 C

functional operation of the device at these or any

 

 

 

 

All Input Voltages (including NC Pins)

 

 

 

other conditions beyond those indicated in the

with Respect to Ground ...................................

-0.6V to +6.25V

operational sections of this specification is not

All Output Voltages

 

 

 

implied. Exposure to absolute maximum rating

 

 

 

conditions for extended periods may affect

with Respect to Ground .............................

-0.6V to VCC + 0.6V

device reliability

Voltage on A9 (including NC Pins)

 

 

 

 

with Respect to Ground ...................................

-0.6V to +13.5V

 

 

 

 

 

 

5

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