ATMEL AT27C512R User Manual

BDTIC www.BDTIC.com/ATMEL

Features

• Fast Read Access Time – 45 ns

• Low-Power CMOS Operation

– 100 µA Max Standby
– 20 mA Max Active at 5 MHz

• JEDEC Standard Packages

– 28-lead PDIP
– 32-lead PLCC
– 28-lead TSOP and SOIC

• 5V ± 10% Supply

• High-Reliability CMOS Technology

– 2,000V ESD Protection
– 200 mA Latchup Immunity

• Rapid Programming Algorithm – 100 µs/Byte (Typical)

• CMOS and TTL Compatible Inputs and Outputs

• Integrated Product Identification Code

• Industrial and Automotive Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

512K (64K x 8)
OTP EPROM

AT27C512R

1. Description

The AT27C512R is a low-power, high-performance 524,288-bit one-time programma­ble read-only memory (OTP EPROM) organized 64K by 8 bits. It requires only one 5V
power supply in normal read mode operation. Any byte can be accessed in less than
45 ns, eliminating the need for speed reducing WAIT states on high-performance
microprocessor systems.

Atmel’s scaled CMOS technology provides high-speed, lower active power consump­tion, and significantly faster programming. Power consumption is typically only 8 mA
in Active Mode and less than 10 µA in Standby.

The AT27C512R is available in a choice of industry-standard JEDEC-approved one­time programmable (OTP) plastic PDIP, PLCC, SOIC, and TSOP packages. All
devices feature two-line control (CE
bus contention.

With 64K byte storage capability, the AT27C512R allows firmware to be stored reli­ably and to be accessed by the system without the delays of mass storage media.

Atmel’s AT27C512R has additional features to ensure high quality and efficient pro­duction use. The Rapid Programming Algorithm reduces the time required to program
the part and guarantees reliable programming. Programming time is typically only
100 µs/byte. The Integrated Product Identification Code electronically identifies the
device and manufacturer. This feature is used by industry-standard programming
equipment to select the proper programming algorithms and voltages.

, OE) to give designers the flexibility to prevent

0015O–EPROM–12/07

2. Pin Configurations

Pin Name Function

A0 - A15 Addresses

O0 - O7 Outputs

CE

/VPP Output Enable/ Program Supply

OE

Chip Enable

NC No Connect

2.1 28-lead PDIP/SOIC Top View

A15
A12

A7
A6
A5
A4
A3
A2
A1

A0
O0
O1
O2

GND

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28

VCC

27

A14

26

A13

25

A8

24

A9

23

A11

22

OE/VPP

21

A10

20

CE

19

O7

18

O6

17

O5

16

O4

15

O3

2.3 28-lead TSOP Top View – Type 1

OE/VPP

VCC

A15

A11

A9

A8
A13
A14

A12

A7

A6

A5

A4

A3

1
2
3
4
5
6

7
8
9
10
11
12
13
14

2.2 32-lead PLCC Top View

28

A10

27

CE

26

O7

25

O6

24

O5

23

O4

22

O3

21

GND

20

O2

19

O1

18

O0

17

A0

16

A1

15

A2

A7

A12

A15NCVCC

A14

A13

432

1

O2

GND

323130

O3O4O5

NC

29

A8

28

A9

27

A11

26

NC

25

OE/VPP

24

A10

23

CE

22

O7

21

O6

A6
A5
A4
A3
A2
A1
A0

NC

O0

5
6
7
8
9
10
11
12
13

14151617181920

O1

Note: PLCC Package Pins 1 and 17 are Don’t Connect.

2

AT27C512R

0015O–EPROM–12/07

3. System Considerations

Switching between active and standby conditions via the Chip Enable pin may produce tran­sient voltage excursions. Unless accommodated by the system design, these transients may
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This
capacitor should be connected between the V
to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit
boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again
connected between the V
close as possible to the point where the power supply is connected to the array.

4. Block Diagram

AT27C512R

and Ground terminals of the device, as close

CC

and Ground terminals. This capacitor should be positioned as

CC

5. Absolute Maximum Ratings*

Temperature Under Bias............................... -55°C to + 125°C

Storage Temperature .................................... -65°C to + 150°C

Voltage on Any Pin with

Respect to Ground ........................................-2.0V to + 7.0V

Voltage on A9 with

Respect to Ground .....................................-2.0V to + 14.0V

VPP Supply Voltage with

Respect to Ground ......................................-2.0V to + 14.0V

Note: 1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is

+ 0.75V DC which may overshoot to +7.0 volts for pulses of less than 20 ns.

V

CC

(1)

(1)

(1)

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only and func­tional operation of the device at these or any other
conditions beyond those indicated in the opera­tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.

0015O–EPROM–12/07

3

6. Operating Modes

Mode/Pin CE OE/V

Read V

Output Disable V

Standby V

Rapid Program

(2)

PGM Inhibit V

Product Identification

(4)

IL

IL

IH

V

IL

IH

V

IL

PP

V

IL

V

IH

(1)

X

V

PP

V

PP

A9 =V

V

IL

A0 = VIH or VIL
A1 - A15 = V

Notes: 1. X can be VIL or VIH.

2. Refer to Programming Characteristics.

3. V

= 12.0 ± 0.5V.

H

4. Two identifier bytes may be selected. All Ai inputs are held low (V
) to select the Manufacturer’s Identification byte and high (VIH) to select the Device Code byte.

low (V

IL

), except A9 which is set to VH and A0 which is toggled

IL

7. DC and AC Operating Conditions for Read Operation

AT27C512R

-45 -70

Operating Temp.(Case)

Ind. -40°C - 85°C -40°C - 85°C

Auto. -40° C - 125° C

Ai Outputs

Ai D

(1)

X

High Z

X High Z

Ai D

(1)

X

(3)

H

High Z

Identification Code

IL

OUT

IN

V

Supply 5V ± 10% 5V ± 10%

CC

8. DC and Operating Characteristics for Read Operation

Symbol Parameter Condition Min Max Units

I

LI

I

LO

I

SB

I

CC

V

IL

V

IH

V

OL

V

OH

Note: 1. V

Input Load Current VIN = 0V to V

Output Leakage Current V

(1)

V

Standby Current

CC

= 0V to V

OUT

I

(CMOS), CE = V

SB1

(TTL), CE = 2.0 to V

I

SB2

VCC Active Current f = 5 MHz, I

CC

CC

CC ±

= 0 mA, CE = V

OUT

0.3V 100 µA

0.5V 1 mA

CC +

Input Low Voltage -0.6 0.8 V

Input High Voltage 2.0 VCC + 0.5 V

Output Low Voltage IOL = 2.1 mA 0.4 V

Output High Voltage IOH = -400 µA 2.4 V

must be applied simultaneously with or before OE/VPP, and removed simultaneously with or after OE/VPP..

CC

Ind. ±1 µA

Auto. ±5 µA

Ind. ±5 µA

Auto. ±10 µA

IL

20 mA

4

AT27C512R

0015O–EPROM–12/07

9. AC Characteristics for Read Operation

Symbol Parameter Condition

(1)

t

ACC

(1)

t

CE

(1)

t

OE

(1)

t

DF

t

OH

Note: 1. See AC Waveforms for Read Operation.

Address to Output Delay CE = OE/VPP = V

CE to Output Delay OE/VPP = V

OE/VPP to Output Delay CE = V

OE/V

or CE High to Output Float, Whichever Occurred First 20 25 ns

PP

IL

IL

Output Hold from Address, CE or OE/VPP, Whichever Occurred
First

AT27C512R

AT27C512R

-45 -70

Min Max Min Max

IL

45 70 ns

45 70 ns

20 30 ns

77 ns

Units

10. AC Waveforms for Read Operation

(1)

Notes: 1. Timing measurement reference level is 1.5V for -45 devices. Input AC drive levels are VIL = 0.0V and VIH = 3.0V. Timing mea-

surement reference levels for all other speed grades are V

= 0.8V and VOH = 2.0V. Input AC drive levels are VIL = 0.45V

OL

and VIH = 2.4V.

2. OE

/VPP may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE.

3. OE/VPP may be delayed up to t

- tOE after the address is valid without impact on t

ACC

ACC

.

4. This parameter is only sampled and is not 100% tested.

5. Output float is defined as the point when data is no longer driven.

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5