BDTIC www.BDTIC.com/ATMEL
Features
• Fast Read Access Time – 45 ns
• Low-Power CMOS Operation
– 100 µA Max Standby
– 30 mA Max Active at 5 MHz
• JEDEC Standard Packages
– 40-lead PDIP
– 44-lead PLCC
– 40-lead VSOP
• Direct Upgrade from 512K (AT27C516) EPROM
• 5V ± 10% Power Supply
• High-Reliability CMOS Technology
– 2000V ESD Protection
– 200 mA Latchup Immunity
• Rapid
• CMOS and TTL Compatible Inputs and Outputs
• Integrated Product Identification Code
• Industrial and Automotive Temperature Ranges
• Green (Pb/Halide-free) Packaging Option
Programming Algorithm – 100 µs/Word (Typical)
1-Megabit
(64K x 16)
OTP EPROM
AT27C1024
1. Description
The AT27C1024 is a low-power, high-performance 1,048,576 bit one-time programmable read-only memory (OTP EPROM) organized 64K by 16 bits. It requires only
one 5V power supply in normal read mode operation. Any word can be accessed in
less than 45 ns, eliminating the need for speed reducing WAIT states. The by-16 organization make this part ideal for high-performance 16- and 32-bit microprocessor
systems.
In read mode, the AT27C1024 typically consumes 15 mA. Standby mode supply current is typically less than 10 µA.
The AT27C1024 is available in industry-standard JEDEC-approved one-time programmable (OTP) plastic PDIP, PLCC, and VSOP packages. The device features
two-line control (CE
With high density 64K word storage capability, the AT27C1024 allows firmware to be
stored reliably and to be accessed by the system without the delays of mass storage
media.
Atmel’s AT27C1024 have additional features to ensure high quality and efficient production use. The Rapid
the part and guarantees reliable programming. Programming time is typically only
100 µs/word. The Integrated Product Identification Code electronically identifies the
device and manufacturer. This feature is used by industry-standard programming
equipment to select the proper programming algorithms and voltages.
, OE) to eliminate bus contention in high-speed systems.
Programming Algorithm reduces the time required to program
0019M–EPROM–12/07
2. Pin Configurations
Pin Name Function
A0 - A15 Addresses
O0 - O15 Outputs
CE
OE
Chip Enable
Output Enable
PGM
Program Strobe
NC No Connect
Note: Both GND pins must be connected.
2.1 40-lead PDIP Top View
VPP
CE
O15
O14
O13
O12
O11
O10
O9
O8
GND
O7
O6
O5
O4
O3
O2
O1
O0
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
PGM
NC
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
2.3 44-lead PLCC Top View
O12
O11
O10
O9
O8
GND
NC
O7
O6
O5
O4
O13
O14
O15CEVPPNCVCC
65432
7
8
9
10
11
12
13
14
15
16
17
1819202122232425262728
O3O2O1
O0
OE
1
NC
PGMNCA15
4443424140
A0A1A2A3A4
A14
39
38
37
36
35
34
33
32
31
30
29
A13
A12
A11
A10
A9
GND
NC
A8
A7
A6
A5
2.2 40-lead VSOP Top View – Type 1
1
A9
2
A10
3
A11
4
A12
5
A13
6
A14
7
A15
8
NC
9
PGM
10
VCC
11
VPP
12
CE
13
O15
14
O14
15
O13
16
O12
17
O11
18
O10
19
O9
20
O8
2
AT27C1024
GND
40
A8
39
A7
38
A6
37
A5
36
A4
35
A3
34
A2
33
A1
32
A0
31
OE
30
O0
29
O1
28
A2
27
O3
26
O4
25
O5
24
O6
23
O7
22
GND
21
0019M–EPROM–12/07
3. System Considerations
Switching between active and standby conditions via the Chip Enable pin may produce transient voltage excursions. Unless accommodated by the system design, these transients may
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This
capacitor should be connected between the V
to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit
boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again
connected between the V
close as possible to the point where the power supply is connected to the array.
4. Block Diagram
AT27C1024
and Ground terminals of the device, as close
CC
and Ground terminals. This capacitor should be positioned as
CC
5. Absolute Maximum Ratings*
Temperature Under Bias.............................. -55° C to + 125° C
Storage Temperature................................... -65° C to + 150° C
Voltage on Any Pin with
Respect to Ground ........................................-2.0V to + 7.0V
Voltage on A9 with
Respect to Ground .....................................-2.0V to + 14.0V
VPP Supply Voltage with
Respect to Ground ......................................-2.0V to + 14.0V
Note: 1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is
+ 0.75V DC which may overshoot to +7.0V for pulses of less than 20 ns.
V
CC
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
(1)
(1)
(1)
tions beyond those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
0019M–EPROM–12/07
3
6. Operating Modes
Mode/Pin CE OE PGM Ai V
Read V
IL
Output Disable X V
Standby V
Rapid Program
(2)
PGM Verify V
PGM Inhibit V
Product Identification
(4)
IH
V
IL
IL
IH
V
IL
V
IL
IH
XX X X
V
IH
V
IL
XX X V
V
IL
(1)
X
Ai X D
X X X High Z
V
IL
V
IH
X
Ai V
Ai V
A9 = V
(3)
H
A0 = VIH or VIL
A1 - A15 = V
IL
V
PP
(5)
PP
PP
PP
CC
Notes: 1. X can be VIL or VIH.
2. Refer to Programming Characteristics.
3. V
= 12.0 ± 0.5V.
H
4. Two identifier words may be selected. All Ai inputs are held low (V
), except A9 which is set to VH and A0 which is toggled
IL
low (VIL) to select the Manufacturer’s Identification word and high (VIH) to select the Device Code word.
5. Standby V
current (ISB) is specified with VPP = VCC. V
CC
> VPP will cause a slight increase in ISB.
CC
7. DC and AC Operating Conditions for Read Operation
AT27C 102 4
-45 -70
Operating Temp. (Case)
Power Supply 5V ± 10% 5V ± 10%
V
CC
Ind. -40° C - 85° C-40° C - 85° C
Auto.
Outputs
OUT
High Z
D
IN
D
OUT
High Z
Identification Code
8. DC and Operating Characteristics for Read Operation
Symbol Parameter Condition Min Max Units
I
I
I
I
I
V
V
V
V
LI
LO
PP1
SB
CC
IL
IH
OL
OH
(2)
Input Load Current VIN = 0V to V
Output Leakage Current V
(1))
V
Read/Standby Current VPP = V
PP
(1)
V
Standby Current
CC
= 0V to V
OUT
I
(CMOS), CE = V
SB1
(TTL), CE = 2.0 to VCC + 0.5V 1 mA
I
SB2
VCC Active Current f = 5 MHz, I
CC
CC
OUT
CC
CC
= 0 mA, CE = V
Input Low Voltage -0.6 0.8 V
Input High Voltage 2.0 V
Output Low Voltage IOL = 2.1 mA 0.4 V
Output High Voltage I
= -400 µA 2.4 V
OH
Notes: 1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP..
2. V
may be connected directly to VCC, except during programming. The supply current would then be the sum of ICC and IPP..
PP
4
AT27C1024
Ind. ±1 µA
Auto. ±5 µA
Ind. ±5 µA
Auto. ±10 µA
10 µA
± 0.3V 100 µA
IL
30 mA
+ 0.5 V
CC
0019M–EPROM–12/07