ATMEL AT27C080 User Manual

Features

• Fast Read Access Time – 90 ns

• Low Power CMOS Operation

– 100 µA Max Standby

– 40 mA Max Active at 5 MHz

• JEDEC Standard Packages

– 32-lead PLCC

– 32-lead PDIP

– 32-lead TSOP

• 5V ± 10% Supply

• High-Reliability CMOS Technology

– 2,000V ESD Protection

– 200 mA Latchup Immunity

• Rapid

Programming Algorithm – 50 µs/Byte (Typical)

• CMOS and TTL Compatible Inputs and Outputs

• Integrated Product Identification Code

• Industrial Temperature Range

• Green (Pb/Halide-free) Packaging Option

1. Description

The AT27C080 chip is a low-power, high-performance 8,388,608-bit one-time pro-

grammable read only memory (OTP EPROM) organized as 1M by 8 bits. The

AT27C080 requires only one 5V power supply in normal read mode operation. Any

byte can be accessed in less than 90 ns, eliminating the need for speed reducing

WAIT states on high-performance microprocessor systems.

Atmel’s scaled CMOS technology provides low active power consumption and fast

programming. Power consumption is typically 10 mA in active mode and less than

10 µA in standby mode.

The AT27C080 is available in a choice of packages, including; one-time programma-

ble (OTP) plastic PLCC, PDIP and TSOP. All devices feature two-line control (CE

) to give designers the flexibility to prevent bus contention.

With high density 1-Mbyte storage capability, the AT27C080 allows firmware to be

stored reliably and to be accessed by the system without the delays of mass storage

media.

Atmel’s AT27C080 has additional features to ensure high quality and efficient produc-

tion use. The Rapid

Programming Algorithm reduces the time required to program the

part and guarantees reliable programming. Programming time is typically only

50 µs/byte. The Integrated Product Identification Code electronically identifies the

device and manufacturer. This feature is used by industry standard programming

equipment to select the proper programming algorithms and voltages.

8-Megabit

(1M x 8) OTP

EPROM

AT27C080

0360L–EPROM–12/07

BDTIC www.BDTIC.com/ATMEL

0360L–EPROM–12/07

AT27C080

2.1 32-lead TSOP (Type 1) Top View

2.2 32-lead PDIP Top View

A11

A13

A14

A17

A18

VCC

A19

A16

A15

A12

OE/VPP

A10

GND

A19

A16

A15

A12

GND

VCC

A18

A17

A14

A13

A11

OE/VPP

A10

2.3 32-lead PLCC Top View

A14

A13

A11

OE/VPP

A10

GND

A12

A15

A16

A19

VCC

A18

A17

2. Pin Configurations

Pin Name Function

A0 - A19 Addresses

O0 - O7 Outputs

Chip Enable

/VPP Output Enable/Program Supply

0360L–EPROM–12/07

AT27C080

3. System Considerations

Switching between active and standby conditions via the Chip Enable pin may produce tran-

sient voltage excursions. Unless accommodated by the system design, these transients may

exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high

frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This

capacitor should be connected between the V

and Ground terminals of the device, as close

to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit

boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again

connected between the V

and Ground terminals. This capacitor should be positioned as

close as possible to the point where the power supply is connected to the array.

4. Block Diagram

Note: 1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is

+ 0.75V DC which may overshoot to +7.0V for pulses of less than 20 ns.

5. Absolute Maximum Ratings*

Temperature Under Bias................................ -55°C to +125°C

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent

damage to the device. This is a stress rating

only and functional operation of the device at

these or any other conditions beyond those

indicated in the operational sections of this

specification is not implied. Exposure to abso-

lute maximum rating conditions for extended

periods may affect device reliability.

Storage Temperature ..................................... -65°C to +150°C

Voltage on Any Pin with

Respect to Ground .........................................-2.0V to +7.0V

(1)

Voltage on A9 with

Respect to Ground ......................................-2.0V to +14.0V

(1)

Supply Voltage with

Respect to Ground .......................................-2.0V to +14.0V

(1)

Integrated UV Erase Dose............................. 7258 W•sec/cm

0360L–EPROM–12/07

AT27C080

Notes: 1. X can be V

or V

IH.

2. Refer to Programming Characteristics.

3. V

= 12.0 ± 0.5V.

4. Two identifier bytes may be selected. All Ai inputs are held low (V

), except A9 which is set to V

and A0 which is toggled

low (V

) to select the Manufacturer’s Identification byte and high (V

) to select the Device Code byte.

Note: 1. V

must be applied simultaneously or before OE/ V

, and removed simultaneously or after OE/V

6. Operating Modes

Mode/Pin CE OE/V

Ai Outputs

Read V

Ai D

OUT

Output Disable X V

(1)

High Z

Standby V

X X High Z

Rapid Program

(2)

Ai D

PGM Verify V

Ai D

OUT

PGM Inhibit V

X High Z

Product Identification

(4)

A9 = V

(3)

A0 = V

or V

A1 - A19 = V

Identification Code

7. DC and AC Operating Conditions for Read Operation

AT27C080-90

Industrial Operating Temperature (Case) -40° C - 85° C

Power Supply 5V ± 10%

8. DC and Operating Characteristics for Read Operation

Symbol Parameter Condition Min Max Units

Input Load Current V

= 0V to V

(Com., Ind.) ±1.0 µA

Output Leakage Current V

OUT

= 0V to V

(Com., Ind.) ±5.0 µA

(1)

Standby Current

SB1

(CMOS), CE = V

± 0.3V 100 µA

SB2

(TTL), CE = 2.0 to V

+ 0.5V 1.0 mA

Active Current f = 5 MHz, I

OUT

= 0 mA, CE = V

40 mA

Input Low Voltage -0.6 0.8 V

Input High Voltage 2.0 V

+ 0.5 V

Output Low Voltage I

= 2.1 mA 0.4 V

Output High Voltage I

= -400 µA 2.4 V

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