ATMEL AT27BV800-15JI, AT27BV800-15JC, AT27BV800-12TI, AT27BV800-12TC, AT27BV800-12RI Datasheet

Features

•

Read Access Time - 120 ns

•

Word-wide or Byte-wide Configurable

•

Dual Voltage Range Operation

– Unregulated Battery Power Supply Range, 2.7V to 3.6V

or Standard 5V

•

8-Megabit Flash and Mask ROM Compatable

•

Low Power CMOS Operation

µ

–20

A Maximum Standby

– 10 mA Max. Active at 5 MHz for V

•

JEDEC Standard Packages

– 44-Lead PLCC
– 44-Lead SOIC (SOP)
– 48-Lead TSOP (12 mm x 20 mm)

•

High Reliability CMOS Technology

– 2,000 ESD Protection
– 200 mA Latchup Immunity

•

Rapid™ Programming Algorithm - 50

•

CMOS and TTL Compatible Inputs and Outputs

– JEDEC Standard for LVTTL and LVBO

•

Integrated Product Identification Code

•

Commercial and Industrial Temperature Ranges

±±±±

10% Supply Range

= 3.6V

CC

µ

s/word (typical)

8-Megabit
(512K x 16 or
1024K x 8)
Unregulated

Battery-Voltage

High Speed

™

Description

The AT27BV800 is a high performance low-power, low-voltage 8,388,608-bit one time
programmable read only memory (OTP EPROM) organized as either 512K by 16 or
1024K by 8 bits. It r eq uire s o nl y one su ppl y in the r ang e of 2.7 to 3.6V i n n ormal r ea d

Pin Configurations

Pin Name Function

A0 - A18 Addresses
O0 - O15 Outputs
O15/A-1 Output/Address

Byte Mode/

/V

BYTE
CE

OE
NC No Connect

PP

Program Supply
Chip Enable
Output En able

SOIC (SOP)

1

NC

2

A18

3

A17

4

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

CE

13

GND

14

OE

15

O0

16

O8

17

O1

18

O9

19

O2

20

O10

21

O3

22

O11

44

NC

43

NC

42

A8

41

A9

40

A10

39

A11

38

A12

37

A13

36

A14

35

A15

34

A16

33

BYTE/VPP

32

GND

31

O15/A-1

30

O7

29

O14

28

O6

27

O13

26

O5

25

O12

24

O4

23

VCC

A15
A14
A13
A12
A11
A10

A18
A17

A5A6A7
65432

7

A4

8

A3

9

A2

10

A1

11

A0

12

CE

13

GND

14

OE

15

O0

16

O8

17

O1

1819202122232425262728

O9

1
2
3
4
5
6
7

A9

8

A8

9

NC

10

NC

11

NC

12

NC

13

NC

14

NC

15

NC

16
17
18

A7

19

A6

20

A5

21

A4

22

A3

23

A2

24

A1

O2

O16O3O11

TSOP

Type 1

PLCC

A17

A18

GNDNCA8A9A10
1

NC

4443424140

O4

O12O5O13

VCC

A11

39
38
37
36
35
34
33
32
31
30
29

A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6

48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25

A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
O11
O3
O10
O2
O9
O1
O8
O0
OE
GND
CE
A0

(continued)

OTP EPROM

AT27BV800
Preliminary

AT27BV800
Preliminary

Rev. 0988B–03/98

1

mode operation. The x16 organization makes this part ideal
for portable and hand held 16- and 32-bit microp rocessor
based systems using either regulated or unregulate d bat­tery power.

Atmel’s innovative design te chniques provide f ast speeds
that rival 5V parts while ke eping the low power c onsump­tion of a 3V supply. At V

= 2.7V, any w ord can be

CC

accessed in less than 120ns. With a typical power dissipa­tion of only 10 mW at 5mHZ and V

= 3V, the AT27BV800

CC

consumes less than one fifth the power of a standard 5V
EPROM.

Standby mode supply cu rrent is typica lly less than 1 mA at
3V. The AT27BV800 simplifies system design an d
stretches battery lifetime e ven furthe r by elim inating th e
need for power supply regulation.

The AT27BV800 can be organized as either word-wide or
byte-wide. The org anizatio n is se lected v ia the B YTE

/V

PP

pin. When BYTE/VPP is asserted high (VIH), the word-wide
organization is sele cted and the O15/A-1 pi n is used for
O15 data output. When BY TE

/VPP is asserted low (VIL),the
byte wide organization is se lected and the O 15/A-1 pin is
used for the address pin A-1. When the AT27BV800 is logi­cally regarded as x16 (word-wide), but read in the byte­wide mode, then with A-1=V
bit word are selected with A-1 =V

the lower eight bits of the 16

IL

the upper 8 bits of the

IH

16-bit word are selected.
The AT27BV800 is available in industry standard JEDEC-

approved one-time programmable (OTP) PLCC, SOIC
(SOP), and TSOP packages. The device features two-line
control(CE

,OE) to elimi nate bu s cont ention in h igh-spee d

systems.
With high den sity 51 2K word o r 1 024K -bit stor age capa bil-

ity, the AT27B V800 allo ws fir mware to be to b e sto red reli­ably and to be accessed by the system without the delays
of mass storage media.

The AT27BV800 op eratin g with V

at 3.0V produces TTL

CC

level outputs that are compatible with standard TTL logic
devices operating at V

= 5V. At VCC = 2.7V, the part is

CC

compatible with JEDEC approved low voltage battery oper­ation (LVBO) interface specifications. T he device is als o
capable of standard 5-volt operation making it ideally suited
for dual sup ply rang e system s or card produc ts that are
pluggable in both 3-volt and 5-volt hosts.

Atmel’s AT27BV800 has additional features that ensure
high quality a nd e ffici ent produc tion use . The Rapi d

TM

Pro­gramming Algorithm reduces the time required to program
the part and guarantees reliable programming. Program­ming time is typical ly on ly 50µ s/word. The In tegrated Prod­uct Identification Code electronically identifies the device
and manufacturer. This feature is used by industry standard
programming equi pmen t to se lect the prop er progr amm ing
equipment and voltages. The AT27BV800 programs
exactly the same way as a standard 5V AT27C800 and
uses the same programming equipment.

System Considerations

Switching between active and standby conditions via the
Chip Enable pin may produce trans ient voltage excursions.
Unless accommodated by the system design, these tran­sients may exceed data sheet limits, resulting in device
non-conforman ce. At a mini mum, a 0.1 µF high freque ncy,
low inherent induc tance, cera mic capacitor should be uti­lized for each device. This capacitor should be connected
between the V
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arra ys, a 4.7 µ F bulk electrolytic capacitor should
be utilized, again connected between the V
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.

and Ground terminals of the device, as

CC

and Ground

CC

Block Diagram

2

AT27BV800

Absolute Maximum Ratings*

AT27BV800

Temperature Under Bias................................ -55°C to +125°C

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

Storage Temperature..................................... -65°C to +150°C

age to the device. This i s a stress rating only a nd

functional operation of the device at these or any
Voltage on Any Pin with

with Respect to Ground..................................-2.0V to +7.0V

(1)

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating
Voltage on A9 with

Respect to Ground ......................................-2.0V to +14.0V

(1)

conditions f or e xtended p eriods ma y aff ect de vice

reliability.

Note: 1. Minimum voltage is -0.6V DC which may under-

VPP Supply Voltage with

Respect to Ground .......................................-2.0V to +14.0V

(1)

shoot to -2.0V for pulses of less than 20 ns. Max-

imum output pin voltage is Vcc + 0.75V DC which

may overshoot to + 7.0V for pulses of less than

20 ns.

Operating Modes

Mode/Pin CE OE Ai BYTE/V

Read Word-wide V
Read Byte-wide Upper V
Read Byte-wide Lower V
Output Disable X
Standby V
Rapid Program

(3)

IL

IL

IL
(1)

IH

V

IL

PGM Verify X V
PGM Inhibit V

Product Identi fi cation

Notes: 1. X can be VIL or V

(5)

IH.

IH

V

IL

2. Read, output disable, and stand by modes require, 2.7V ≤ VCC ≤ 3.6V, or 4.5V ≤ VCC ≤ 5.5V.

3. Refer to the programming characteristics tables in this data sheet.
= 12.0 ± 0.5V.

4. V

H

5. Two identifier words may be selected. All Ai inputs are held low (VIL) except A9,which is set to VH, and A0, which is toggled

low (V

) to select the Manufacturer’s Identification word and high (VIH) to select the Device Code word.

IL

6. Standby VCC current (ISB) is specified with VPP = VCC. VCC > VPP will cause a slight increase in I

V

IL

V

IL

V

IL

V

IH
(1)

X
V

IH

IL

V

IH

V

IL

(1)

X

(1)

X

(1)

X

(1)

X

(1)

X

Ai V
Ai V

(1)

X

(4)

A9 = V

H

A0 = VIH or V

A1 - A18 = V

IL
IL

Outputs

O

PP

V

IH

V

IL

V

IL

0-O7

D

OUT

D

OUT

D

OUT

X High Z

(6)

X

PP

PP

V

PP

V

IH

SB.

O8-O

D
High Z V
High Z V

High Z

D

D
High Z

Identification Code

OUT

IN

OUT

14

O15/A-1

D

OUT

IH

IL

3

DC and AC Operating Conditions for Read Operation

Operating Temperature (Case)

V

Power Supply

CC

Com. 0°C - 70°C0
Ind.

AT27BV800

-12 -15

°

C - 70°C

-40°C - 85°C-40

2.7V to 3.6V 2.7V to 3.6V
5V ± 10% 5V ± 10%

°

C - 85°C

DC and Operating Characteristics for Read Operation

= Preliminary

Symbol Parameter Condition Min Max Units
VCC = 2.7V to 3.6V

±

I

LI

I

LO

(2)

I

PP1

I

SB

I

CC

V

IL

V

IH

V

OL

V

OH

Input Load Current VIN = 0V to V
Output Leakage Current V

(1)

V

Read/Standby Current V

PP

(1)

V

Standby Current

CC

= 0V to V

OUT

= V

PP

CC

(CMOS), CE = V

I

SB1

I

(TTL), CE = 2.0 to V

SB2

VCC Active Current f = 5MHz, I

= 3.0 to 3.6V -0.6 0.8 V

V

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

CC

V

= 2.7 to 3.6V -0.6 0.2 x V

CC

= 3.0 to 3.6V 2.0 VCC + 0.5 V

V

CC

V

= 2.7 to 3.6V 0.7 x V

CC

= 2.0 mA 0.4 V

I

OL

I

= 100 µA0.2V

OL

I

= 20 µA0.1V

OL

= -2.0 mA 2.4 V

I

OH

I

= -100 µAV

OH

I

= -20 µAV

OH

CC

CC

±

0.3V 20

CC

+ 0.5V 100 mA

CC

= 0 mA, CE = VIL, VCC = 3.6V 10 mA

OUT

CC

- 0.2 V

CC

- 0.1 V

CC

VCC = 4.5V to 5.5V

I
I
I

I

I
V
V
V
V

LI

LO

PP1

SB

CC

(2)

IL

IH

OL

OH

Input Load Current VIN = 0V to V
Output Leakage Current V

(1)

V

Read/Standby Current V

PP

(1)

V

Standby Current

CC

OUT

= V

PP

(CMOS), CE = V

I

SB1

I

(TTL), CE = 2.0 to V

SB2

VCC Active Current f = 5MHz, I

= 0V to V

CC

OUT

CC

CC

±

0.3V 100

CC

CC

= 0 mA, CE = V

+ 0.5V 1 mA

IL

Input Low Voltage -0.6 0.8 V
Input High Voltage 2.0 VCC + 0.5 V
Output Low Voltage IOH = -2.1 mA 0.4 V
Output High Voltage I

= -400 µA2.4V

OH

Notes: 1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP.

2. VPP may be connected directly to VCC except during programming. The supply current would then be the sum of I

1

±

5

10

CC

VCC + 0.5 V

±

1.0

±

5.0

10

40 mA

CC

µ

A

µ

A

µ

A

µ

A

V

µ

A

µ

A

µ

A

µ

A

and IPP.

4

AT27BV800