AT25010/020/040
7
Functional Description
The AT25010/020/040 i s des ig ned to in ter fac e dire ctl y wit h
the synchronous serial peripheral interface (SPI) of the
6805 and 68HC11 series of microcontrollers.
The AT25010/020/040 utilizes an 8-bit instruction register.
The list of inst ruction s and th eir ope ration c odes are contained in Table 1. Al l inst ruction s, addre sses, an d data ar e
transferred with the MSB first and start with a hi gh-to-low
CS
transition.
Note: “A” represents MSB address bit A8.
WRITE ENABLE (WREN):
The device will power up in
the write disable state when V
CC
is applied. All programming instructions must therefore be preceded by a Write
Enable instruct ion. The WP
pin must be held high during a
WREN instruction.
WRITE DISABLE (WRDI):
To protect the device against
inadvertent writes, the Wr it e Disabl e i nst ru cti on disabl es all
programming modes. The WRDI ins tructio n is ind ependen t
of the status of the WP
pin.
READ STATUS REGISTER (RDSR):
The Read Status
Register instruction provides access to the status register.
The READY/BUSY an d Write E nable sta tus of th e device
can be determined by the RDSR instruction. Similarly, the
Block Write Pr otec tion bits i ndicate th e exten t of prote ctio n
employed. These bits are set by using the WRSR instru ction.
WRITE STATUS REGISTER (WRSR):
The WRSR
instruction allows the user to select one of four levels of
protection. The AT25010 /020/04 0 is divi ded into four array
segments. Top quarte r (1/4), Top half (1 /2), or all of the
memory segments can be protected. Any of the data within
any selected segment will therefore be READ only. The
block write prot ection le vels and corr espondi ng stat us register control bits are shown in Table 4.
The two bits, BP1 and BP0 are nonvolatile cells that have
the same properties and functions as the regular memory
cells (e.g. WREN, t
WC
, RDSR).
READ SEQUENCE (READ):
Reading the
AT25010/020/04 0 via the S O (Seri al Outp ut) pi n requi res
the following sequence. After the CS
line is pulled low to
select a device, the READ op-code (including A8) is transmitted via the SI line followed by the by te address to be
read (A7-A0). Upon com ple tion, any data on the S I l in e w ill
be ignored. The data (D7-D0) at the specified address is
then shifted out onto the SO line. If only one byte is to be
read, the CS
line should be driven high after the data
comes out. The READ sequence can be continued since
the byte address is automatically incremented and data will
continue to be shifted out. When the highest address is
reached, the add ress counter wi ll roll over to th e lowest
address allowing the ent ire memo ry to be read in one c ontinuous READ cycle.
Table 1.
Instruction Set for the AT25010/020/040
Instruction
Name
Instruction
Format Operation
WREN 0000 X110 Set Write Enable Latch
WRDI 0000 X100 Reset Write Enable Latch
RDSR 0000 X101 Read Status Register
WRSR 0000 X001 Write Status Register
READ 0000 A011 Read Data from Memory Array
WRITE 0000 A010 Write Data to Memory Array
Table 2.
Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
XXXXBP1BP0WENRDY
Table 3.
Read Status Register Bit Definition
Bit Definition
Bit 0 (RDY
)
Bit 0 = 0 (RDY
) indicates the device is
READY. Bit 0 = 1 indicates the write cycle
is in progress.
Bit 1 (WEN)
Bit 1 = 0 indicat es th e device
is not
WRITE
ENABLED . Bit 1 = 1 indicates the de v ice is
WRITE ENABLED.
Bit 2 (BP0) See Table 4.
Bit 3 (BP1) See Table 4.
Bits 4-7 are 0s when device is not in an internal write cycle.
Bits 0-7 are 1s during an internal write cycle.
Table 4.
Block Write Protect Bits
Level
Status
Register Bits Array Addresses Protected
BP1 BP0 AT25010 AT25020 AT25040
0 0 0 None None None
1 (1/4) 0 1 60-7F C0-FF 180-1FF
2 (1/2) 1 0 40-7F 80-FF 100-1FF
3 (All) 1 1 00-7F 00-FF 000- 1FF