Package (SAP), 8-lead TSSOP, and 8-ball dBGA2 Packages
• Die Sales: Wafer Form, Waffle Pack and Bumped Wafers
= 1.8V to 5.5V)
CC
Two-wire Serial
EEPROM
256K (32,768 x 8)
AT24C256B
Description
The AT24C256B provides 262,144 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 32,768 words of 8 bits each. The
device’s cascadable feature allows up to eight devices to share a common two-wire
bus. The device is optimized for use in many industrial and commercial applications
where low-power and low-voltage operation are essential. The devices are available
in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin SAP, 8lead TSSOP, and 8-ball dBGA2 packages. In addition, the entire family is available in
a 1.8V (1.8V to 5.5V) version.
Pin Configurations
Pin NameFunction
A0–A2Address Inputs
SDASerial Data
SCLSerial Clock Input
WPWrite Protect
GNDGround
GND
A0
A1
A2
VCC
SDA
WP
SCL
8-lead PDIP
1
2
3
4
8-lead dBGA2
8
7
6
5
8-lead SOIC
1
GND
A0
A1
A2
GND
A0
A1
A2
2
3
4
8-lead TSSOP
1
2
3
4
8
VCC
7
WP
6
SCL
5
SDA
1
A0
2
A1
3
A2
4
GND
8
7
6
5
8
VCC
7
WP
6
SCL
5
SDA
Not
Recommended
for New Design
VCC
WP
SCL
SDA
Bottom View
8-lead Ultra Thin SAP
VCC
8
WP
7
SCL
6
SDA
5
Bottom View
1
A0
2
A1
3
A2
4
GND
Rev. 5279C–SEEPR–3/09
1.Absolute Maximum Ratings*
Operating Temperature 55C to +125C
Storage Temperature 65C to +150C
Voltage on Any Pin
with Respect to Ground 1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1-1.Block Diagram
VCC
GND
WP
SCL
SDA
A
A
A
2
1
0
START
STOP
LOGIC
LOAD
DEVICE
ADDRESS
COMPARATOR
R/W
*NOTICE:Stresses beyond those listed under “Absolute
SERIAL
CONTROL
LOGIC
COMP
LOAD
DATA W OR D
ADDR/COUNTER
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
EN
H.V. PUMP/TIMING
DATA RECOVERY
INC
EEPROM
X DEC
Y DEC
D
IN
D
OUT
2
AT24C256B
SERIAL MUX
D
/ACK
OUT
LOGIC
5279C–SEEPR–3/09
2.Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive-edge clock data into each EEPROM
device and negative-edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open-collector
devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1, and A0 pins are device address inputs
that are hardwired (directly to GND or to Vcc) for compatibility with other AT24Cxx devices.
When the pins are hardwired, as many as eight 256K devices may be addressed on a single bus
system. (Device addressing is discussed in detail under “Device Addressing,” page 9.) A device
is selected when a corresponding hardware and software match is true. If these pins are left
floating, the A2, A1, and A0 pins will be internally pulled down to GND. However, due to capacitive coupling that may appear during customer applications, Atmel recommends always
connecting the address pins to a known state. When using a pull-up resistor, Atmel recommends
using 10k or less.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write
operations. When WP is connected directly to Vcc, all write operations to the memory are inhibited. If the pin is left floating, the WP pin will be internally pulled down to GND. However, due to
capacitive coupling that may appear during customer applications, Atmel recommends always
connecting the WP pins to a known state. When using a pull-up resistor, Atmel recommends
using 10k or less.
AT24C256B
3.Memory Organization
AT24C256B, 256K SERIAL EEPROM: The 256K is internally organized as 512 pages of 64
bytes each. Random word addressing requires a 15-bit data word address.
Table 3-1.Pin Capacitance
Applicable over recommended operating range from TA=25C, f = 1.0 MHz, VCC= +1.8V
SymbolTest ConditionMaxUnitsConditions
C
I/O
C
IN
Note:1. This parameter is characterized and is not 100% tested.
Input/Output Capacitance (SDA)8pFV
Input Capacitance (A0,A1, SCL)6pFVIN=0V
(1)
I/O
=0V
5279C–SEEPR–3/09
3
Table 3-2.DC Characteristics
Applicable over recommended operating range from: T
SymbolParameterTest ConditionMinTypMaxUnits
V
CC1
I
CC1
I
CC2
I
SB1
I
LI
I
LO
V
IL
V
IH
V
OL2
V
OL1
Notes: 1. VILmin and VIHmax are reference only and are not tested.
Supply Voltage1.85.5V
Supply CurrentVCC= 5.0VREAD at 400 kHz1.02.0mA
Supply CurrentVCC= 5.0VWRITE at 400 kHz2.03.0mA
V
= 1.8V
Standby Current
(1.8V option)
Input Leakage
Current V
CC
= 5.0V
Output Leakage
Current V
CC
= 5.0V
Input Low Level
Input High Level
(1)
(1)
CC
= 5.5V6.0µA
V
CC
V
IN=VCC
V
OUT=VCC
or V
or V
Output Low LevelVCC= 3.0VIOL= 2.1 mA0.4V
Output Low LevelVCC= 1.8VIOL= 0.15 mA0.2V
= 40Cto+85C, VCC= +1.8V to +5.5V (unless otherwise noted)
AI
1.0µA
SS
SS
V
IN=VCC
or V
SS
0.103.0µA
0.053.0µA
0.6VCCx 0.3V
VCCx 0.7VCC+ 0.5V
4
AT24C256B
5279C–SEEPR–3/09
Table 3-3.AC Characteristics (Industrial Temperature)
Applicable over recommended operating range from T
= 40C to +85C, VCC= +1.8V to +5.5V, CL = 100 pF (unless oth-
AI
erwise noted). Test conditions are listed in Note 2.
AT24C256B
1.8-volt2.5, 5.0-volt
SymbolParameter
f
SCL
t
LOW
t
HIGH
t
i
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WR
Endurance
Clock Frequency, SCL4001000kHz
Clock Pulse Width Low1.30.4µs
Clock Pulse Width High0.60.4µs
Noise Suppression Time
(1)
10050ns
Clock Low to Data Out Valid0.050.90.050.55µs
Time the bus must be free before a
new transmission can start
(1)
1.30.5µs
Start Hold Time0.60.25µs
Start Set-up Time0.60.25µs
Data In Hold Time00µs
Data In Set-up Time100100ns
(1)
(1)
0.30.3µs
300100ns
Inputs Rise Time
Inputs Fall Time
Stop Set-up Time0.60.25µs
Data Out Hold Time5050ns
Write Cycle Time55ms
(1)
25°C, Page Mode, 3.3V1,000,000
Notes: 1. This parameter is ensured by characterization and is not 100% tested.
2. AC measurement conditions:
(connects to VCC): 1.3 k (2.5V, 5.5V), 10 k (1.8V)
R
L
Input pulse voltages: 0.3 V
CC
to 0.7 V
CC
Input rise and fall times: 50 ns
Input and output timing reference voltages: 0.5 V
CC
UnitsMinMaxMinMax
Write
Cycles
5279C–SEEPR–3/09
5
4.Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device.
Data on the SDA pin may change only during SCL low time periods (see Figure 4-1). Data
changes during SCL high periods will indicate a start or stop condition as defined below.
Figure 4-1.Data Validity
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition that must
precede any other command (see Figure 4-2).
Figure 4-2.Start and Stop Definition
SDA
SCL
DATA STABLEDATA STABLE
DATA
CHANGE
SDA
SCL
STARTSTOP
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-
ure 4-2).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a “0” during the ninth clock cycle to acknowledge
that it has received each word.
STANDBY MODE: The AT24C256B features a low-power standby mode that is enabled upon
power-up and after the receipt of the stop bit and the completion of any internal operations.
6
AT24C256B
5279C–SEEPR–3/09
SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire
part can be protocol reset by following these steps: (a) Create a start bit condition, (b) clock 9
cycles, (c) create another start bit followed by stop bit condition as shown below. The device is
ready for next communication after above steps have been completed.
Figure 4-3.Software Reset
Start bit
AT24C256B
Stop bitStart bitDummy Clock Cycles
SCL
SDA
Figure 4-4.Bus Timing
SCL
t
SU.STA
SDA IN
SDA OUT
12389
t
HIGH
t
LOW
t
HD.DAT
t
AA
t
SU.DAT
t
DH
t
HD.STA
t
F
t
LOW
t
R
t
SU.STO
t
BUF
Figure 4-5.Write Cycle Timing
SCL
DA
8th BIT
WORDn
Note:1. The write cycle time tWRis the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
5279C–SEEPR–3/09
ACK
STOP
CONDITION
(1)
t
wr
START
CONDITION
7
Figure 4-6.Output Acknowledge
SCL
DATA IN
DATA OUT
1
STARTACKNOWLEDGE
8
9
8
AT24C256B
5279C–SEEPR–3/09
5.Device Addressing
The 256K EEPROM requires an 8-bit device address word following a start condition to enable
the chip for a read or write operation (see Figure 5-1). The device address word consists of a
mandatory “1”, “0” sequence for the first four most significant bits as shown. This is common to
all two-wire EEPROM devices.
Figure 5-1.Device Address
AT24C256B
1 0 1 0 A2 A1 A0 R/W
MSB
The next three bits are the A2, A1, A0 device address bits to allow as many as eight devices on
the same bus. These bits must compare to their corresponding hardwired input pins. The A2,
A1, and A0 pins use an internal proprietary circuit that biases them to a logic low condition if the
pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high, and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made,
the device will return to a standby state.
DATA SECURITY: The AT24C256B has a hardware data protection scheme that allows the user
to write protect the whole memory when the WP pin is at V
CC
.
LSB
5279C–SEEPR–3/09
9
6.Write Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a “0”. The addressing device, such as a microcontroller, must
then terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally-timed write cycle, t
write cycle and the EEPROM will not respond until the write is complete (see Figure 6-1).
Figure 6-1.Byte Write
Note:* = DON’T CARE bit
PAGE WRITE: The 256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The
EEPROM will respond with a “0” after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 6-2).
, to the nonvolatile memory. All inputs are disabled during this
WR
Figure 6-2.Page Write
Note:* = DON’T CARE bit
The data word address lower six bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than 64 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a “0”, allowing the read or write sequence to continue.
10
AT24C256B
5279C–SEEPR–3/09
7.Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to “1”. There are three read operations:
current address read, random address read, and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page, to the first byte of the first page.
Once the device address with the read/write select bit set to “1” is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. The microcontroller does
not respond with an input “0” but does generate a following stop condition (see Figure 7-1).
Figure 7-1.Current Address Read
AT24C256B
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a “0” but does generate a following
stop condition (see Figure 7-2).
Figure 7-2.Random Read
Note:* = DON’T CARE bit
5279C–SEEPR–3/09
11
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a “0” but
does generate a following stop condition (see Figure 7-3).
LINE 1-------> 2EBU
LINE 2-------> YMTC
|<-- Pin 1 This Corner
Y = ONE DIGIT YEAR CODE
4: 2004 7: 2007
5: 2005 8: 2008
6: 2006 9: 2009
M = SEAL MONTH (USE ALPHA DESIGNATOR A-L)
A = JANUARY
B = FEBRUARY
" " """""""
J = OCTOBER
K = NOVEMBER
L = DECEMBER
TC = TRACE CODE
16
AT24C256B
5279C–SEEPR–3/09
10. Packaging Information
8P3 – PDIP
AT24C256B
D1
b3
4 PLCS
Top View
D
e
Side View
1
N
b
b2
A2 A
L
c
E
E1
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
SYMBOL
A
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
D1 0.005
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
MIN
NOM
–
MAX
–
0.210 2
–
NOTE
–
3
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
2325 Orchard Parkway
R
San Jose, CA 95131
5279C–SEEPR–3/09
TITLE
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
DRAWING NO.
8P3
01/09/02
REV.
B
17
8S1 – JEDEC SOIC
C
1
E
N
∅
E1
L
Top View
End View
e
D
Side View
B
A
SYMBOL
A1
A1.35–1.75
A10.10–0.25
b0.31–0.51
C0.17–0.25
D4.80–5.00
E13.81–3.99
E5.79–6.20
e1.27 BSC
L0.40–1.27
∅0˚–8˚
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
NOTE
18
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
R
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
AT24C256B
DRAWING NO.
8S1B
5279C–SEEPR–3/09
10/7/03
REV.
8S2 - EIAJ SOIC
θ
1
N
E
C
E1
A
b
L
A1
e
D
AT24C256B
C
1
E
N
TOP VIEW
e
D
SIDE VIEW
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
b
A
SYMBOL
A1
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 5
C 0.15 0.35 5
D 5.13 5.35
E1 5.18 5.40 2, 3
E 7.70 8.26
L 0.51 0.85
θ 0° 8°
e 1.27 BSC 4
θ
END VIEW
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
E1
L
NOM
MAX
NOTE
4/7/06
2325 Orchard Parkway
R
San Jose, CA 95131
5279C–SEEPR–3/09
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
DRAWING NO.
8S2D
REV.
19
8U2-1 – dBGA2
A1 BALL PAD CORNER
e
(e1)
D
Top View
A1 BALL PAD CORNER
2
1
A
B
C
D
1.b
E
A1
A2
A
Side View
d
(d1)
Bottom View
8 Solder Balls
1. Dimension 'b' is measured at the maximum solder ball diameter.
This drawing is for general information only.
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
TITLE
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 0.81 0.91 1.00
A1 0.15 0.20 0.25
A2 0.40 0.45 0.50
b 0.25 0.30 0.35 1
D 2.35 BSC
E 3.73 BSC
e 0.75 BSC
e1 0.74 REF
d 0.75 BSC
d1 0.80 REF
MIN
NOM
MAX
NOTE
DRAWING NO.
PO8U2-1
A
6/24/03
REV.
20
AT24C256B
5279C–SEEPR–3/09
8A2 – TSSOP
Pin 1 indicator
this corner
AT24C256B
123
N
Top View
b
e
D
Side View
A2
E1
E
L1
L
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
D2.903.003.102, 5
E6.40 BSC
E14.304.404.503, 5
A––1.20
A20.801.001.05
b0.19–0.304
e0.65 BSC
L0.450.600.75
L11.00 REF
MIN
NOM
MAX
NOTE
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
5279C–SEEPR–3/09
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
2325 Orchard Parkway
R
San Jose, CA 95131
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
DRAWING NO.
8A2
5/30/02
REV.
B
21
8Y7 – SAP
D1
PIN 1 ID
E1
L
b
e1
e
PIN 1 INDEX AREA
A
E
D
A1
A
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A––0.60
A10.00–0.05
D5.806.006.20
E4.704.905.10
D13.303.403.50
E13.904.004.10
b0.350.400.45
e1.27 TYP
e13.81 REF
L0.500.600.70
MIN
NOM
MAX
NOTE
22
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
AT24C256B
TITLE
8Y7, 8-lead (6.00 x 4.90 mm Body) Ultra-Thin SOIC Array
Package (UTSAP) Y7
DRAWING NO.
8Y7
5279C–SEEPR–3/09
10/13/05
REV.
B
Revision History
Doc.
Rev.DateComments
5279C3/2009Changed the Vcc to 5.5V in the test condition for Isb1
5279B3/2008Format changes to document
AT24C256B product with date code 2008 work week 14 (814) or later
5279A1/2008
supports 5Vcc operation
Initial document release
AT24C256B
5279C–SEEPR–3/09
23
HeadquartersInternational
Atmel Corporation
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USA
Tel: 1(408) 441-0311
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Technical Support
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Fax: (81) 3-3523-7581
Sales Contact
www.atmel.com/contacts
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