• Die Sales: Wafer Form, Waffle Pack, and Bumped Wafers.
Two-wire Serial
EEPROM
2K (256 x 8)
4K (512 x 8)
AT24C02A
Description
The AT24C02A/04A provides 2048/4096 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 256/512 words of 8 bits each. The
device is optimized for use in many industrial and commercial applications where lowpower and low-voltage operation are essential. The AT24C02A/04A is available in
space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP and 8-lead TSSOP packages and is accessed via a two-wire serial interface. In addition, the entire family is
available in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V) versions.
Table 1. Pin Configuration
GND
A0
A1
A2
GND
1
2
3
4
8-lead PDIP
1
A0
2
A1
3
A2
4
8-lead SOIC
1
2
3
4
A0
A1
A2
GND
8
VCC
7
WP
6
SCL
5
SDA
VCC
8
WP
7
SCL
6
SDA
5
Pin NameFunction
A0–A2Address Inputs
SDASerial Data
SCLSerial Clock Input
WPWrite Protect
NCNo-connect
8-lead TSSOP
1
A0
2
A1
3
A2
4
GND
8-lead MAP
VCC
8
WP
7
SCL
6
SDA
5
Bottom View
8
VCC
7
WP
6
SCL
5
SDA
A0
1
A1
2
A2
3
GND
4
8-ball dBGA2
VCC
8
WP
7
SCL
6
SDA
5
Bottom View
AT24C04A
Rev. 0976Q–SEEPR–8/05
1
Absolute Maximum Ratings*
Operating Temperature........................................ −40°C to +85°C
Storage Temperature .........................................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground ........................................ −1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
STA RT
STOP
LOGIC
Pin DescriptionSERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is
open-drain driven and may be wire-ORed with any number of other open-drain or open
collector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device
address inputs that must be hardwired for the AT24C02A. As many as eight 2K devices
may be addressed on a single bus system. (Device addressing is discussed in detail
under Device Addressing, page 8).
2
AT24C02A/04A
0976Q–SEEPR–8/05
AT24C02A/04A
The AT24C04A uses the A2 and A1 inputs for hardwire addressing, and a total of four
4K devices may be addressed on a single bus system. The A0 pin is a no-connect.
WRITE PROTECT (WP): The AT24C02A/04A have a WP pin that provides hardware
data protection. The WP pin allows normal read/write operations when connected to
ground (GND). When the WP pin is connected to V
enabled and operates as shown.
Table 2 . Write Protect
Part of the Array Protected
WP Pin Status
24C02A24C04A
, the write protection feature is
CC
At V
CC
At GNDNormal Read/Write Operations
Upper Half (1K) ArrayUpper Half (2K) Array
Memory Organization AT24C02A, 2K SERIAL EEPROM: The 2K is internally organized with 32 pages of 8
bytes each. Random word addressing requires an 8-bit data word address.
AT24C04A, 4K SERIAL EEPROM: The 4K is internally organized with 32 pages of 16
bytes each. Random word addressing requires a 9-bit data word address.
Table 3. Pin Capacitance
Applicable over recommended operating range from TAI = 25°C, f = 1.0 MHz, VCC = +1.8V
SymbolTest ConditionMaxUnitsConditions
C
I/O
C
IN
Note:1. This parameter is characterized and is not 100% tested.
Input/Output Capacitance (SDA)8pFV
Input Capacitance (A0, A1, A2, SCL)6pFVIN = 0V
(1)
I/O
= 0V
0976Q–SEEPR–8/05
3
Table 4. DC Characteristics
Applicable over recommended operating range from: T
= −40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted)
AI
SymbolParameterTest ConditionMinTypMaxUnits
V
V
V
V
I
I
I
I
I
I
I
I
V
V
V
V
CC1
CC2
CC3
CC4
CC
CC
SB1
SB2
SB3
SB4
LI
LO
IL
IH
OL2
OL1
Supply Voltage1.85.5V
Supply Voltage2.55.5V
Supply Voltage2.75.5V
Supply Voltage4.55.5V
Supply Current VCC = 5.0VREAD at 100 kHz0.41.0mA
Supply Current VCC = 5.0VWRITE at 100 kHz2.03.0mA
Standby Current VCC = 1.8VVIN = VCC or V
Standby Current VCC = 2.5VVIN = VCC or V
Standby Current VCC = 2.7VVIN = VCC or V
Standby Current VCC = 5.0VVIN = VCC or V
Input Leakage CurrentVIN = VCC or V
Output Leakage CurrentV
Input Low Level
Input High Level
(1)
(1)
OUT
= V
CC
or V
SS
SS
SS
SS
SS
SS
−0.6VCC x 0.3V
VCC x 0.7VCC + 0.5V
0.63.0µA
1.44.0µA
1.64.0µA
8.018.0µA
0.103.0µA
0.053.0µA
Output Low Level VCC = 3.0VIOL = 2.1 mA0.4V
Output Low Level VCC = 1.8VIOL = 0.15 mA0.2V
Note:1. VIL min and VIH max are reference only and are not tested.
4
AT24C02A/04A
0976Q–SEEPR–8/05
Table 5. AC Characteristics
Applicable over recommended operating range from T
pF (unless otherwise noted)
SymbolParameter
AT24C02A/04A
= −40°C to +85°C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and 100
AI
1.8-volt2.5, 2.7, 5.0-volt
UnitsMinMaxMinMax
f
SCL
t
LOW
t
HIGH
t
I
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WR
Endurance
Clock Frequency, SCL100400kHz
Clock Pulse Width Low4.71.2µs
Clock Pulse Width High4.00.6µs
Noise Suppression Time
(2)
Clock Low to Data Out Valid0.14.50.10.9µs
Time the bus must be free before
a new transmission can start
(1)
4.71.2µs
Start Hold Time4.00.6µs
Start Set-up Time4.70.6µs
Data In Hold Time00µs
Data In Set-up Time200100ns
Inputs Rise Time
Inputs Fall Time
(1)
(1)
Stop Set-up Time4.70.6µs
Data Out Hold Time10050ns
Write Cycle Time55ms
(1)
5.0V, 25°C, Page Mode1M1MWrite Cycles
Note:1. This parameter is characterized and is not 100% tested.
10050ns
1.00.3µs
300300ns
0976Q–SEEPR–8/05
5
Device OperationCLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-
nal device. Data on the SDA pin may change only during SCL low time periods (see
Figure 2). Data changes during SCL high periods will indicate a start or stop condition as
defined below.
Figure 2. Data Validity
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition
that must precede any other command (see Figure 3).
Figure 3. Start and Stop Definition
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.
After a read sequence, the stop command will place the EEPROM in a standby power
mode (see Figure 3).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from
the EEPROM in 8-bit words.
received each word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C02A/04A/08A/16A features a low-power standby mode
that is enabled: (a) upon power-up and (b) after the receipt of the Stop bit and the completion of any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any
two-wire part can be reset by following these steps:
1. Clock up to 9 cycles
2. Look for SDA high in each cycle while SCL is high
3. Create a start condition as SDA is high.
6
AT24C02A/04A
.
The EEPROM sends a “0” to acknowledge that it has
0976Q–SEEPR–8/05
Figure 4. Bus Timing
Figure 5. Write Cycle Timing
SCL
AT24C02A/04A
SDA
WORDn
Notes: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
8th BIT
ACK
STOP
CONDITION
(1)
t
wr
START
CONDITION
Figure 6. Output Acknowledge
0976Q–SEEPR–8/05
7
Device AddressingThe 2K and 4K EEPROM devices require an 8-bit device address word following a start
condition to enable the chip for a read or write operation, as shown in Figure 7.
Figure 7. Device Address
A
A
A
2K
1
0
1
0
2
1
R/W
0
MSB
A
0
4K
The device address word consists of a mandatory “1”, “0” sequence for the first four
most significant bits as shown. This is common to all the EEPROM devices.
The next three bits are the A2, A1 and A0 device address bits for the 2K EEPROM.
These three bits must compare to their corresponding hardwired input pins.
The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a
memory page address bit. The two device address bits must compare to their corresponding hardwired input pins. The A0 pin is no-connect.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high, and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is
not made, the chip will return to a standby state.
1
1
0
A
2
1
P0
LSB
R/W
Write OperationsBYTE WRITE: A write operation requires an 8-bit data word address following the
device address word and acknowledgement. Upon receipt of this address, the EEPROM
will again respond with a “0” and then clock in the first 8-bit data word. Following receipt
of the 8-bit data word, the EEPROM will output a “0” and the addressing device, such as
a microcontroller, must terminate the write sequence with a stop condition. At this time,
the
EEPROM enters an internally-timed write cycle, tWR, to the nonvolatile memory. All
inputs are disabled during this write cycle, and the EEPROM will not respond until the
write is complete, see Figure 8 on page 8.
Figure 8. Byte Write
S
T
A
R
DEVICE
T
ADDRESS
SDA LINE
M
S
B
PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write, and the 4K device
is capable of 16-byte page writes.
8
AT24C02A/04A
W
R
I
T
E
WORD ADDRESS
M
L
A
R
/
S
B
S
C
W
B
K
S
T
O
DATA
L
A
S
C
B
K
0976Q–SEEPR–8/05
P
A
C
K
Figure 9. Page Write
S
T
A
R
T
SDA LINE
DEVICE
ADDRESS
AT24C02A/04A
A page write is initiated the same as a byte write, but the microcontroller does not send
a stop condition after the first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcontroller can transmit up to seven
(2K) or fifteen (4K) more data words. The EEPROM will respond with a “0” after each
data word received. The microcontroller must terminate the page write sequence with a
stop condition, see Figure 9.
W
R
I
T
E
WORD ADDRESS (n)DATA (n)DATA (n + 1) DATA (n + x)
S
T
O
P
M
S
B
L
A
R
/
S
C
B
K
W
A
C
K
A
C
K
A
C
K
A
C
K
The data word address lower three (2K) or four (4K) bits are internally incremented following the receipt of each data word. The higher data word address bits are not
incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the
beginning of the same page. If more than eight (2K) or sixteen (4K) data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will
be overwritten.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is
representative of the operation desired. Only if the internal write cycle has completed
will the EEPROM respond with a “0” allowing the read or write sequence to continue.
0976Q–SEEPR–8/05
9
Read OperationsRead operations are initiated the same way as write operations with the exception that
the read/write select bit in the device address word is set to “1”. There are three read
operations: current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the
last address accessed during the last read or write operation, incremented by one. This
address stays valid between operations as long as the chip power is maintained. The
address “roll over” during read is from the last byte of the last memory page to the first
byte of the first page. The address “roll over” during write is from the last byte of the current page to the first byte of the same page.
Once the device address with the read/write select bit set to “1” is clocked in and
acknowledged by the EEPROM, the current address data word is serially clocked out.
The microcontroller does not respond with an input “0” but does generate a following
stop condition, see Figure 10.
Figure 10. Current Address Read
S
SDA LINE
T
A
R
T
M
S
B
DEVICE
ADDRESS
R
E
A
D
L
A
R
/
S
C
B
K
W
DATA
S
T
O
P
N
O
A
C
K
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the
data word address. Once the device address word and data word address are clocked
in and acknowledged by the EEPROM, the microcontroller must generate another start
condition. The microcontroller now initiates a current address read by sending a device
address with the read/write select bit high. The EEPROM acknowledges the device
address and serially clocks out the data word. The microcontroller does not respond
with a “0” but does generate a following stop condition, see Figure 11.
Figure 11. Random Read
W
R
I
T
E
L
A
R
M
/
S
C
S
B
K
W
B
DUMMY WRITE
WORD
ADDRESS n
S
T
DEVICE
A
R
ADDRESS
T
A
L
M
C
S
S
K
B
B
R
E
A
D
A
L
C
S
K
B
DATA n
S
T
O
P
N
O
A
C
K
SDA LINE
S
T
A
R
T
M
S
B
DEVICE
ADDRESS
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or
a random address read. After the microcontroller receives a data word, it responds with
an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to
increment the data word address and serially clock out sequential data words. When the
memory address limit is reached, the data word address will “roll over” and the sequen-
10
AT24C02A/04A
0976Q–SEEPR–8/05
Figure 12. Sequential Read
AT24C02A/04A
tial read will continue. The sequential read operation is terminated when the
microcontroller does not respond with a “0” but does generate a following stop condition,
see Figure 12.
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Pl
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
16
2325 Orchard Parkway
R
San Jose, CA 95131
AT24C02A/04A
ane H.
DRAWING NO.
8A2
0976Q–SEEPR–8/05
5/30/02
REV.
B
8U3-1 – dBGA2
AT24C02A/04A
E
D
PIN 1 BALL PAD CORNER
Top View
PIN 1 BALL PAD CORNER
2
31
4
(d1)
d
8
67
5
e
(e1)
Bottom View
8SOLDER BALLS
1. Dimension “b” is measured at the maximum solder ball diameter.
This drawing is for general information only.
A
2
A
Side View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 0.71 0.81 0.91
A1 0.10 0.15 0.20
A2 0.40 0.45 0.50
b 0.20 0.25 0.30
D 1.50 BSC
E 2.00 BSC
e 0.50 BSC
e1 0.25 REF
d 1.00 BSC
d1 0.25 REF
MIN
NOM
1.
b
A
1
MAX
NOTE
0976Q–SEEPR–8/05
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
TITLE
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
DRAWING NO.
PO8U3-1 A
6/24/03
REV.
17
8Y1 – MAP
PIN 1 INDEX AREA
A
1
PIN 1 INDEX AREA
2
34
E1
D
D1
L
E
Top View
Side View
A
End View
8
A1
SYMBOL
A – – 0.90
A1 0.00 – 0.05
D 4.70 4.90 5.10
E 2.80 3.00 3.20
D1 0.85 1.00 1.15
E1 0.85 1.00 1.15
b 0.25 0.30 0.35
e 0.65 TYP
L 0.50 0.60 0.70
b
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
6e5
7
Bottom View
MAX
NOTE
18
2325 Orchard Parkway
R
San Jose, CA 95131
AT24C02A/04A
TITLE
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1
DRAWING NO.
8Y1
0976Q–SEEPR–8/05
2/28/03
REV.
C
Y5 – MAP
AT24C02A/04A
D2
b
(8x)
Pin 1
Index
Area
E
E2
Pin 1 ID
L (8x)
D
A3
Top View
A
e (6x)
1.50 REF.
Bottom View
COMMON DIMENSIONS
(Unit of Measure = mm)
A2
A1
SYMBOL
D2.00 BSC
E3.00 BSC
D21.401.501.60
E21.751.851.95
A ––0.90
A10.00.020.05
A2––0.85
A30.20 REF
L0.200.300.40
e0.50 BSC
b0.200.250.302
MIN
NOM
Side View
Notes:1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
2325 Orchard Parkway
R
San Jose, CA 95131
TITLE
8Y5, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Mini-Map, Dual
No Lead Package (DFN)
MAX
NOTE
DRAWING NO.
8Y5
11/12/03
REV.
A
0976Q–SEEPR–8/05
19
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