• Die Sales: Wafer Form, Waffle Pack and Bumped Wafers
= 1.8V to 5.5V)
CC
Two-wire
Serial EEPROM
1K (128 x 8)
2K (256 x 8)
4K (512 x 8)
8K (1024 x 8)
Description
The AT24C01A/02/04/08A/16A provides 1024/2048/4096/8192/16384 bits of serial
electrically erasable and programmable read-only memory (EEPROM) organized as
128/256/512/1024/2048 words of 8 bits each. The device is optimized for use in many
industrial and commercial applications where low-power and low-voltage operation
are essential. The AT24C01A/02/04/08A/16A is available in space-saving 8-lead
PDIP, 8-lead JEDEC SOIC,
(AT24C01A/AT24C02/AT24C04), 8-lead TSSOP, and 8-ball dBGA2 packages and is
accessed via a Two-wire serial interface. In addition, the entire family is available in
2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V) versions.
2. Not Recommended for
new design; Please
refer to AT24C02B
datasheet.
3. Not Recommended for
new design; Please
refer to AT24C16B
datasheet
(3)
0180Z1–SEEPR–5/07
1
Absolute Maximum Ratings
Operating Temperature..................................–55°C to +125°C
Storage Temperature .....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground ....................................–1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
2
AT24C01A/02/04/08A/16A
0180Z1–SEEPR–5/07
AT24C01A/02/04/08A/16A
Pin DescriptionSERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is
open-drain driven and may be wire-ORed with any number of other open-drain or opencollector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device
address inputs that are hard wired for the AT24C01A and the AT24C02. As many as
eight 1K/2K devices may be addressed on a single bus system (device addressing is
discussed in detail under the Device Addressing section).
The AT24C04 uses the A2 and A1 inputs for hard wire addressing and a total of four 4K
devices may be addressed on a single bus system. The A0 pin is a no connect and can
be connected to ground.
The AT24C08A only uses the A2 input for hardwire addressing and a total of two 8K
devices may be addressed on a single bus system. The A0 and A1 pins are no connects
and can be connected to ground.
The AT24C16A does not use the device address pins, which limits the number of
devices on a single bus to one. The A0, A1 and A2 pins are no connects and can be
connected to ground.
WRITE PROTECT (WP): The AT24C01A/02/04/08A/16A has a Write Protect pin that
provides hardware data protection. The Write Protect pin allows normal Read/Write
operations when connected to ground (GND). When the Write Protect pin is connected
to V
, the write protection feature is enabled and operates as shown in Table 2.
CC
Table 2. Write Protect
WP Pin
Status
At V
CC
At GNDNormal Read/Write Operations
24C01A24C0224C0424C08A24C16A
Full (1K)
Array
Full (2K)
Array
Part of the Array Protected
Full (4K)
Array
Full (8K)
Array
Full (16K)
Array
Memory OrganizationAT24C01A, 1K SERIAL EEPROM: Internally organized with 16 pages of 8 bytes each,
the 1K requires a 7-bit data word address for random word addressing.
AT24C02, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each,
the 2K requires an 8-bit data word address for random word addressing.
AT24C04, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each,
the 4K requires a 9-bit data word address for random word addressing.
AT24C08A, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes
each, the 8K requires a 10-bit data word address for random word addressing.
0180Z1–SEEPR–5/07
AT24C16A, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes
each, the 16K requires an 11-bit data word address for random word addressing.
3
Table 3. Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
SymbolTest ConditionMaxUnitsConditions
C
I/O
C
IN
Input/Output Capacitance (SDA)8pFV
Input Capacitance (A0, A1, A2, SCL)6pFVIN = 0V
I/O
= 0V
Note:1. This parameter is characterized and is not 100% tested.
Table 4. DC Characteristics
Applicable over recommended operating range from: T
= –40°C to +85°C, VCC = +1.8V to +5.5V, VCC= +1.8V to +5.5V
AI
(unless otherwise noted)
SymbolParameterTest ConditionMinTypMaxUnits
V
CC1
V
CC2
V
CC3
I
CC
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
I
LI
I
LO
V
IL
V
IH
V
OL2
V
OL1
Note:1. V
Supply Voltage1.85.5V
Supply Voltage2.75.5V
Supply Voltage4.55.5V
Supply Current VCC = 5.0VREAD at 100 kHz0.41.0mA
Supply Current VCC = 5.0VWRITE at 100 kHz2.03.0mA
Standby Current VCC = 1.8VVIN = VCC or V
Standby Current VCC = 2.5VVIN = VCC or V
Standby Current VCC = 2.7VVIN = VCC or V
Standby Current VCC = 5.0VVIN = VCC or V
Input Leakage CurrentVIN = VCC or V
Output Leakage CurrentV
Input Low Level
Input High Level
(1)
(1)
OUT
= V
CC
or V
SS
SS
SS
SS
SS
SS
–0.6VCC x 0.3V
VCC x 0.7VCC + 0.5V
0.63.0µA
1.44.0µA
1.64.0µA
8.018.0µA
0.103.0µA
0.053.0µA
Output Low Level VCC = 3.0VIOL = 2.1 mA0.4V
Output Low Level VCC = 1.8VIOL = 0.15 mA0.2V
min and V
IL
max are reference only and are not tested.
IH
4
AT24C01A/02/04/08A/16A
0180Z1–SEEPR–5/07
Table 5. AC Characteristics
Applicable over recommended operating range from T
CL = 1 TTL Gate and 100 pF (unless otherwise noted)
AT24C01A/02/04/08A/16A
= –40°C to +85°C, VCC = +1.8V to +5.5V, VCC = +2.7V to +5.5V,
AI
1.8-volt 2.7, 5.0-volt
SymbolParameter
f
SCL
t
LOW
t
HIGH
t
I
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WR
Endurance
Clock Frequency, SCL100400kHz
Clock Pulse Width Low4.71.2µs
Clock Pulse Width High4.00.6µs
Noise Suppression Time
Clock Low to Data Out Valid0.14.50.10.9µs
Time the bus must be free before
a new transmission can start
Start Hold Time4.00.6µs
Start Setup Time4.70.6µs
Data In Hold Time00µs
Data In Setup Time200100ns
Inputs Rise Time
Inputs Fall Time
(1)
(1)
Stop Setup Time4.70.6µs
Data Out Hold Time10050ns
Write Cycle Time55ms
(1)
5.0V, 25°C, Byte Mode1M1M
Note:1. This parameter is characterized.
UnitsMinMaxMinMax
(1)
(1)
4.71.2µs
10050ns
1.00.3µs
300300ns
Write
Cycles
0180Z1–SEEPR–5/07
5
Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-
nal device. Data on the SDA pin may change only during SCL low time periods (see
Figure 4 on page 7). Data changes during SCL high periods will indicate a start or stop
condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition
which must precede any other command (see Figure 5 on page 8).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.
After a read sequence, the stop command will place the EEPROM in a standby power
mode (see Figure 5 on page 8).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from
the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has
received each word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C01A/02/04/08A/16A features a low-power standby mode
which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the
completion of any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2wire part can be reset by following these steps:
1.Clock up to 9 cycles.
2.Look for SDA high in each cycle while SCL is high.
3.Create a start condition.
6
AT24C01A/02/04/08A/16A
0180Z1–SEEPR–5/07
Bus Timing
S
S
Figure 2. SCL: Serial Clock, SDA: Serial Data I/O®
Write Cycle Timing
Figure 3. SCL: Serial Clock, SDA: Serial Data I/O
AT24C01A/02/04/08A/16A
CL
DA
Note:1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
8th BIT
WORDn
ACK
STOP
CONDITION
(1)
t
wr
START
CONDITION
Figure 4. Data Validity
7
0180Z1–SEEPR–5/07
Figure 5. Start and Stop Definition
Figure 6. Output Acknowledge
8
AT24C01A/02/04/08A/16A
0180Z1–SEEPR–5/07
AT24C01A/02/04/08A/16A
Device AddressingThe 1K, 2K, 4K, 8K and 16K EEPROM devices all require an 8-bit device address word
following a start condition to enable the chip for a read or write operation (refer to Figure
7).
The device address word consists of a mandatory one, zero sequence for the first four
most significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 1K/2K EEPROM.
These 3 bits must compare to their corresponding hard-wired input pins.
The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a
memory page address bit. The two device address bits must compare to their corresponding hard-wired input pins. The A0 pin is no connect.
The 8K EEPROM only uses the A2 device address bit with the next 2 bits being for
memory page addressing. The A2 bit must compare to its corresponding hard-wired
input pin. The A1 and A0 pins are no connect.
The 16K does not use any device address bits but instead the 3 bits are used for memory page addressing. These page addressing bits on the 4K, 8K and 16K devices
should be considered the most significant bits of the data word address which follows.
The A0, A1 and A2 pins are no connect.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is
not made, the chip will return to a standby state.
Write OperationsBYTE WRITE: A write operation requires an 8-bit data word address following the
device address word and acknowledgment. Upon receipt of this address, the EEPROM
will again respond with a zero and then clock in the first 8-bit data word. Following
receipt of the 8-bit data word, the EEPROM will output a zero and the addressing
device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, t
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will
not respond until the write is complete (see Figure 8 on page 11).
PAGE WRITE: The 1K/2K EEPROM is capable of an 8-byte page write, and the 4K, 8K
and 16K devices are capable of 16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send
a stop condition after the first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcontroller can transmit up to seven
(1K/2K) or fifteen (4K, 8K, 16K) more data words. The EEPROM will respond with a zero
after each data word received. The microcontroller must terminate the page write
sequence with a stop condition (see Figure 9 on page 11).
The data word address lower three (1K/2K) or four (4K, 8K, 16K) bits are internally
incremented following the receipt of each data word. The higher data word address bits
are not incremented, retaining the memory page row location. When the word address,
internally generated, reaches the page boundary, the following byte is placed at the
beginning of the same page. If more than eight (1K/2K) or sixteen (4K, 8K, 16K) data
words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten.
, to the
WR
0180Z1–SEEPR–5/07
9
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero allowing the read or write sequence to continue.
Read
Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll
over” during read is from the last byte of the last memory page to the first byte of the first page.
The address “roll over” during write is from the last byte of the current page to the first byte of
the same page.
Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but does generate a following stop condition (see Figure 10 on page 12).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition.
The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (see Figure 11 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory
address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond
with a zero but does generate a following stop condition (see Figure 12 on page 12).
Notes:1. This device is not recommended for new design. Please refer to AT24C01B datasheet. For 2.7V devices used in the 4.5V to
5.5V range, please refer to performance values in the AC and DC characteristics table.
2. “U” designates Green Package + RoHS compliant.
3. “H” designates Green Package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Notes:1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.
2. “U” designates Green Package + RoHS compliant.
3. “H” designates Green Package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Notes:1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table.
2. “U” designates Green Package + RoHS compliant.
3. “H” designates Green Package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Notes:1. This device is not recommended for new design. Please refer to AT24C16B datasheet. For 2.7V devices used in the 4.5V to
5.5V range, please refer to performance values in the AC and DC characteristics table.
2. “U” designates Green Package + RoHS compliant.
3. “H” designates Green Package + RoHS compliant, with NiPdAu Lead Finish.
4. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please
contact Serial EEPROM Marketing.
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
20
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
DRAWING NO.
8A2
2325 Orchard Parkway
R
San Jose, CA 95131
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
AT24C01A/02/04/08A/16A
0180Z1–SEEPR–5/07
5/30/02
REV.
B
8Y1 – MAP
AT24C01A/02/04/08A/16A
PIN 1 INDEX AREA
A
1
PIN 1 INDEX AREA
34
2
E1
D
D1
L
E
Top View
Side View
A
End View
8
A1
SYMBOL
A – – 0.90
A1 0.00 – 0.05
D 4.70 4.90 5.10
E 2.80 3.00 3.20
D1 0.85 1.00 1.15
E1 0.85 1.00 1.15
b 0.25 0.30 0.35
e 0.65 TYP
L 0.50 0.60 0.70
b
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
6e5
7
Bottom View
MAX
NOTE
2325 Orchard Parkway
R
San Jose, CA 95131
0180Z1–SEEPR–5/07
TITLE
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1
DRAWING NO.
8Y1
2/28/03
REV.
C
21
8Y6 − Mini-MAP (MLP 2x3 mm)
A
Pin 1
Index
Area
E
D
A2
A3
E2
A1
SYMBOL
D2.00 BSC
E3.00 BSC
D21.401.501.60
E2 --1.40
A --0.60
A10.00.020.05
A2--0.55
A30.20 REF
L0.200.300.40
e0.50 BSC
b0.200.250.302
D2
e (6X)
1.50 REF.
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
b
(8X)
Pin 1 ID
L (8X)
NOTE
Notes:1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
TITLE
22
2325 Orchard Parkway
R
San Jose, CA 95131
AT24C01A/02/04/08A/16A
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
Dual No Lead Package (DFN) ,(MLP 2x3)
DRAWING NO.
8Y6
0180Z1–SEEPR–5/07
8/26/05
REV.
C
5TS1 – SOT23
AT24C01A/02/04/08A/16A
e1
E1
5
4
E
C
C
L
L1
1
2
Top View
3
End View
b
A2
A
Seating
Plane
e
D
Side View
NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing
MO-193, Variation AB, for additional information.
2. Dimension D does not include mold flash, protrusions, or gate burrs.
Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end.
Dimension E1 does not include interlead flash or protrusion. Interlead
flash or protrusion shall not exceed 0.15 mm per side.
3. The package top may be smaller than the package bottom. Dimensions
D and E1 are determined at the outermost extremes of the plastic body
exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
4. These dimensions apply to the flat section of the lead between 0.08 mm
and 0.15 mm from the lead tip.
5. Dimension "b" does not include Dambar protrusion. Allowable Dambar
protrusion shall be 0.08 mm total in excess of the "b" dimension at
maximum material condition. The Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and an adjacent lead
shall not be less than 0.07 mm.
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
TITLE
5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Literature Requests
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