Schottky Diode Array
ASDN010
ASTEC Semiconductor
1
© ASTEC Semiconductor
ASDN010
Schottky Diode Arra y
Description
The ASDN010 is a Schottky Diode Memory Bus Terminator designed to eliminate overshoot and undershoot problems caused by reflections on high speed
lines, while maintaining noise immunity and minimizing any losses in power consumption.
The ASDN010 is an ideal terminator for applications
such as SDRAM bus lines, or v2.1 66MHz PCI busses.
The ASDN010 supports up to 18 terminated lines.
Each line can be simultaneously clamped to both
ground and power supply rails, allowing effective termination under a wide variety of loading conditions.
Features
•
Provides protection regardless of
card loading conditions
•
Fast turn on and reverse
revovery characteristics
•
24 pin QSOP package has a
small footprint, saving valuable
board space
•
18 channel, dual rail clamping
capacity
•
Ideal for applications that require
noise immunity and low power
consumption
Pin Configuration
—
Top view
Ordering Information
Package Temperature Range Order Code
14-Pin QSOP 0 to 70° C ASDN010MWP
QSOP (MWP)
GROUND
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
GROUND
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
VDD
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
VDD
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
SCHOTTKY
GROUND
VDD
ASDN010
Schotkey Diode Arra y
ASTEC Semiconductor
2
Absolute Maximum Ratings
Parameter Symbol Rating Units
Supply Voltage V
DD
-0.3 to +7.0 V
Channel clamp current (continuous) I
CLAMP
±50 mA
Operating Temperature 0 to 70 °C
Package Power Rating (QSOP @ 70°C) 1.00 (max.) W
Junction Temperature T
J
150 °C
Storage Temperature T
STG
– 65 to 150 °C
Lead Temperature, Soldering 10 Seconds T
L
300 °C
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Functional Block Diagram
Recommended Conditions
Parameter Symbol Rating Unit
Voltage V
VDD
20 V
Current I
VDD
10 mA
Typical Thermal Resistances
Package θ
JA
θ
JC
Typical Derating
24L-QSOP 110° C/W 8° C/W 9.1 mW/°C
123456789101112
24 23 22 21 20 19 18 17 16 15 14 13
GND VDDGND
GNDVDDVDD
Schottky Diode Array
ASDN010
ASTEC Semiconductor
3
Electrical Characteristics
Electrical Characteristics are guaranteed over full junction temperature range (0 to 70° C). Ambient temperature must be derated based
on power dissipation and package thermal characteristics. The conditions are: V
VDD
= 20V and I
VDD
= 10 mA unless otherwise stated.
Test
Parameter Symbol Condition Min Typ Max Unit
Diode Forward Voltage VF IF = 16 mA 0.65 0.85 V
IF = 50 mA 0.80 1.00 V
Max. Bus Speed (see note 1) ZO = 50Ω, Logic Swing 0.4V to 3.0V 125 MHz
Channel leakage ICL 0 ≤ V
IN ≤ VDD
0.1 5.0 µA
Input Capacitance f = 1 MHz, VIN = 2.5V, TA = 25°C, V
DD
= 5V 5 pF
ESD Protection MIL-STD-883, Method 3015 2 KV
Note 1: The presence of a Schottky diode for clamping bus overshoots will cause additional delays of signal edges. These delays are
the result of diode characteristics such as forward voltage, diode capacitance and the reverse recovery phenomenon. The ground clamp
diode is most critical, particularly if VLSI circuits such as static or dynamic memories are directly connected to busses without any buffer
stages. The incremental delay observed on a positive edge following a negative transition that forward biased the Schottky diode is less
than 800 pS. That represents less than 10% of the 125 MHz (8 nS period) bus cycle time.
Typical Performance Curves
None available at time of printing
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