Page 1
C B03C B
V
mΩ
mΩ
A
Symbol Units
VDS V
VGS ±V
IDM
IAR
EAR mJ
TJ, TSTG °C
Thermal Characteristics
Typ Max Units
105 157
°C/W
210 252
°C/W
63 100
°C/W
AC4812
30V /6A Dual 2N Power MOSFET
General Description
30
Pb-free lead plating; RoHS compliant
6
6B03C
V DS
RDS(on),TYP@VGS=10V
RDS(on),TYP@VGS=4.5
ID
30V /6A Dual 2N Power MOSFET
29.4
Very low on-resistance RDS(on) @ VGS=4.5 V
46.2
Parameter
Maximum
Drain-Source Voltage
30
Gate-Source Voltage
20
Part ID
Package Type
Marking
Tape and reel
infomation
100% UIS Tested
AC4812
SOP8
4812
3000
100% Rg Tested
Repetitive avalanche energy L=0.1mH G
4.4
Power Dissipation A
TA=25°C
2
W
TA=70°C
1.3
Continuous Drain Current A
TA=25°C
6.0
A
TA=70°C
5.0
Pulsed Drain Current B
9.6
Avalanche Current G
1.9
ID
PD
Junction and Storage Temperature Range
-55 to 150
Parameter
Symbol
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady State
Maximum Junction-to-Lead C
Steady State
RθJL
亚芯电子（深圳）有限公司
www.asiachip.cn 第 1 页，共 4 页 Rev0：Oct 2018
Page 2
AC4812
30V /6A Dual 2N Power MOSFET
亚芯电子（深圳）有限公司
STATIC PARAMETERS
Symbol Min Typ Max Units
BVDSS
30 V
1
5
IGSS ±100 nA
VGS(th)
1.2 1.8 2.4 V
29.4 42.0
46.2 60.1
gFS
86 S
VSD
0.72 1 V
IS
6 A
DYNAMIC PARAMETERS
Symbol Min Typ Max Units
Ciss
255 311
pF
Coss
45 55
pF
Crss
35 41
pF
Rg
0.65
Ω
SWITCHING PARAMETERS
Symbol Min Typ Max Units
Qg (10V)
2.55
Qg 4.5V)
1.275
Qgs
0.91
Qgd
1.3
tD(on)
4.25tr3.4
tD(off)
11.9
tf
3.825
trr
8.5 ns
Qrr
2.2 nC
uA
Parameter
Conditions
Drain-Source Breakdown
Voltage
ID = -250uA, VGS = 0V
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
Gate-Body leakage current
VDS = 0V, VGS = ±20V
Gate Threshold Voltage
VDS = VGS ID = 250µA
RDS(ON)
VGS=-10V, ID=6A
IDSS
Static Drain-Source On-
Resistance
Maximum Body-Diode Continuous Current
Parameter
Conditions
Parameter
Conditions
Input Capacitance
Output Capacitance
mΩ
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=21V
VGS=0V, VDS=15V, f=1MHz
Body Diode Reverse Recovery
Time
IF=-8A, dI/dt=500A/µs
Body Diode Reverse Recovery
Charge
IF=18A, dI/dt=500A/µs
Turn-On DelayTime
VGS=10V, VDS=15V,RL=0.75Ω,
RGEN=3Ω
ns
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=6A
nC
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
www.asiachip.cn 第 2 页，共 4 页 Rev0：Oct 2018
Page 3
AC4812
30V /6A Dual 2N Power MOSFET
亚芯电子（深圳）有限公司
www.asiachip.cn 第 3 页，共 4 页 Rev0：Oct 2018
Page 4
AC4812
30V /6A Dual 2N Power MOSFET
亚芯电子（深圳）有限公司
www.asiachip.cn 第 4 页，共 4 页 Rev0：Oct 2018
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