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Specifications are subject to change without notice.
NPN SILICON RF POWER TRANSISTOR
The ASI VMB80-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
9.0 A
65 V
36 V
4.0 V
V
V
V
P
T
IC
CBO
CEO
EBO
DISS
TJ
STG
103 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
VMB80-28S
PACKAGE STYLE .380 4L STUD
ØC
A
E
F
H
G
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
I
J
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
θθJC
CHARACTERISTICS T
1.05 OC/W
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 200 mA 36 V
CEO
BV
IC = 20mA 65 V
CES
BV
IE = 10 mA 4.0 V
EBO
I
V
CES
= 28 V 10 mA
CE
hFE VCE = 5.0 V IC = 500 mA 5.0 -- ---
COB VCB = 28 V f = 1.0 MHz 200 pF
P
G
ηηC
VCC = 28 V P
= 80 W f = 88 MHz
OUT
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
%