NPN SILICON RF POWER TRANSISTOR
The ASI VMB70-12S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
12 A
36 V
18 V
3.5 V
V
V
V
P
T
IC
CBO
CEO
EBO
DISS
TJ
STG
183 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
VMB70-12S
PACKAGE STYLE .380 4L STUD
ØC
A
E
F
H
G
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
I
J
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
θθJC
CHARACTERISTICS T
1.05 OC/W
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 36 V
CBO
BV
IC = 100 mA 36 V
CES
BV
IC = 50 mA 18 V
CEO
BV
IE = 10 mA 4.0 V
EBO
I
VE = 12.5 V 10 mA
CES
hFE VCE = 5.0 V IC =5.0 A 10 --- ---
COB VCB = 12.5 V f = 1.0
270 pF
MHz
PG
ηηC
VCC = 12.5 V P
= 70 W f = 88 MHz
OUT
7.0
60
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
%
Specifications are subject to change without notice.